Electronic Device, Light-Emitting Device, Electronic Appliance, and Lighting Device

ABSTRACT

An electronic device with high outcoupling efficiency or a high light-trapping effect is provided.The electronic device includes a first layer and a second layer between a first electrode and a second electrode, the first layer is included between the first electrode and the second layer, the first layer includes a first organic compound and a first substance, the refractive index of a thin film of the first organic compound is higher than or equal to 1 and lower than or equal to 1.75, the first substance has an electron-accepting property, and the second layer has a function of emitting or absorbing light.

This application is a continuation of copending U.S. application Ser.No. 16/613,245, filed on Nov. 13, 2019 which is a 371 of internationalapplication PCT/IB2018/053276 filed on May 11, 2018, which are allincorporated herein by reference.

TECHNICAL FIELD

One embodiment of the present invention relates to a novel electronicdevice. One embodiment of the present invention also relates to anelectronic device including an organic compound with a low refractiveindex. One embodiment of the present invention also relates to alight-emitting device, an electronic appliance, and a lighting deviceeach including the electronic device.

Note that one embodiment of the present invention is not limited to theabove technical field. One embodiment of the present invention relatesto an object, a method, or a manufacturing method. The present inventionalso relates to a process, a machine, manufacture, or a composition ofmatter. In particular, one embodiment of the present invention relatesto an electronic device, a semiconductor device, a light-emittingdevice, a display device, a lighting device, a light-emitting element,or a manufacturing method thereof.

BACKGROUND ART

Light-emitting elements (organic EL elements) that use organic compoundsand utilize electroluminescence (EL) and electronic devices such asorganic solar cells have been put to practical use. The basic structureof such electronic devices is a structure in which a semiconductor layercontaining an organic compound is interposed between a pair ofelectrodes.

Such electronic devices are lightweight, flexible, and highly designed.The electronic devices have various advantages, for example, coatingprocess is possible, and thus their research and development haveactively proceeded. In particular, light-emitting elements are ofself-light-emitting type, and have advantages such as high visibilityand no need for backlight when used for pixels of a display;accordingly, the light-emitting elements are suitable as flat paneldisplay elements.

In such an electronic device, an organic semiconductor layer obtained bythinning an organic compound is mainly formed, and the organic compoundand the layer structure significantly affect the organic semiconductorelement; thus, selection of the organic compound and the layer structureis important. Moreover, in an electronic device that emits or absorbslight, such as an organic solar cell or an organic EL element, it isimportant that outcoupling efficiency and a light-trapping effect behigh.

Various methods for improving the outcoupling efficiency of an organicEL element have been proposed. For example, in Patent Document 1, theoutcoupling efficiency is improved by formation of unevenness on part ofan electrode or an EL layer.

REFERENCE Patent Document [Patent Document 1] Japanese Published PatentApplication No. 2013-033706 SUMMARY OF INVENTION Problems to be Solvedby the Invention

Examples of a method for improving the outcoupling efficiency of alight-emitting element such as an organic EL element include a methodfor adjusting a refractive index between a substrate and an electrodeand/or between an electrode and an EL layer. However, introduction of alayer that adjusts a refractive index into an organic EL element bringsa problem of a complicated process. Hence, there has been a demand fordevelopment of a layer and a layer structure that function as an ELlayer and can adjust a refractive index. There has also been a demandfor development of a layer and a layer structure that have a highlight-trapping effect in an organic solar cell.

In view of the above-described problem, an object of one embodiment ofthe present invention is to provide an electronic device having highoutcoupling efficiency. Another object of one embodiment of the presentinvention is to provide an electronic device including a layer with alow refractive index. Another object of one embodiment of the presentinvention is to provide an electronic device with low driving voltage.Another object of one embodiment of the present invention is to providean electronic device with reduced power consumption. Another object ofone embodiment of the present invention is to provide an electronicdevice with high reliability. Another object of one embodiment of thepresent invention is to provide an electronic device having highluminous efficiency. Another object of one embodiment of the presentinvention is to provide a novel electronic device. Another object of oneembodiment of the present invention is to provide an electronic devicehaving an excellent light-trapping effect. Another object of oneembodiment of the present invention is to provide a novel semiconductordevice.

Note that the description of the above objects does not preclude theexistence of other objects. In one embodiment of the present invention,there is no need to achieve all the objects. Objects other than theabove will be apparent from the description of the specification and thelike, and objects other than the above can be derived from thedescription of the specification and the like.

Means for Solving the Problems

One embodiment of the present invention is an electronic deviceincluding a first layer and a second layer between a first electrode anda second electrode; the first layer is included between the firstelectrode and the second layer; the first layer includes a first organiccompound and a first substance; a refractive index of a thin film of thefirst organic compound is higher than or equal to 1 and lower than orequal to 1.75; the first substance has an electron-accepting property;and the second layer has a function of emitting or absorbing light.

Another embodiment of the present invention is an electronic deviceincluding a first layer between a first electrode and a secondelectrode; the first layer includes a first organic compound and a firstsubstance; the first organic compound includes a first skeleton and anelectron-donating skeleton; and the first skeleton is a tetraarylmethaneskeleton or a tetraarylsilane skeleton.

In the above structure, the refractive index of the first layer ispreferably higher than or equal to 1 and lower than or equal to 1.75.This structure can improve outcoupling efficiency and a light-trappingeffect of the electronic device.

In the above structure, it is preferable that aryl groups included inthe tetraarylmethane skeleton and the tetraarylsilane skeleton beindependently a substituted or unsubstituted aryl group having 6 to 13carbon atoms. The aryl groups are further preferably substituted orunsubstituted phenyl groups. This structure enables an organic compoundwith a low refractive index and a high carrier-transport property to beobtained. The aryl groups or the phenyl groups may be bonded to eachother to form a ring.

In the above structure, the electron-donating skeleton preferablyincludes any one of a pyrrole skeleton, an aromatic amine skeleton, anacridine skeleton, and an azepine skeleton. This structure can reducethe driving voltage of the electronic device.

In the above structure, the glass transition point (Tg) of the firstorganic compound is preferably higher than or equal to 100° C. Thisstructure enables an electronic device with excellent heat resistance tobe obtained.

In the above structure, the refractive index of the first layer ispreferably lower than the refractive index of the second layer. Thisstructure can improve outcoupling efficiency and a light-trapping effectof the electronic device.

Another embodiment of the present invention is an electronic deviceincluding a first layer, a second layer, and a third layer between afirst electrode and a second electrode; the first layer is includedbetween the first electrode and the second layer; the second layer isincluded between the first layer and the third layer; the first layerincludes a first organic compound and a first substance; a refractiveindex of a thin film of the first organic compound is higher than orequal to 1 and lower than or equal to 1.75; the first substance has anelectron-accepting property; the third layer has a function of emittingor absorbing light; the refractive index of the first layer is lowerthan the refractive index of the second layer; and the refractive indexof the first layer is lower than the refractive index of the thirdlayer.

In the above structure, the first organic compound preferably has anelectron-donating property. This structure enables an electronic devicewith a high carrier-transport property to be obtained.

In the above structure, it is preferable that the first layer be incontact with the second layer, and it is further preferable that thesecond layer be in contact with the third layer. This structure canreduce the refractive index difference between the layers and improveoutcoupling efficiency and a light-trapping effect of the electronicdevice.

In the above structure, the refractive index of the first layer ispreferably lower than the refractive index of the first electrode. Thisstructure can improve outcoupling efficiency and a light-trapping effectof the electronic device.

In the above structure, it is preferable that a volume ratio of thefirst substance to the first organic compound in the first layer behigher than or equal to 0.01 and lower than or equal to 0.3. Thisstructure can improve outcoupling efficiency and a light-trapping effectof the electronic device.

In the above structure, the first substance preferably contains any oneof titanium oxide, vanadium oxide, tantalum oxide, molybdenum oxide,tungsten oxide, rhenium oxide, ruthenium oxide, chromium oxide,zirconium oxide, hafnium oxide, and silver oxide. This structure enablesan electronic device with a high carrier-transport property to beobtained.

In the above structure, the first substance is preferably any one of7,7,8,8-tetracyanoquinodimethane (abbreviation: TCNQ),7,7,8,8-tetracyano-2,3,5,6-tetrafluoro-quinodimethane (abbreviation:F4TCNQ), and 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane(abbreviation: F6TCNNQ). This structure enables an electronic devicewith a high carrier-transport property to be obtained.

In the above structure, the electronic device is preferably an organicEL element or a solar cell.

Another embodiment of the present invention is an electronic applianceincluding the light-emitting element having any of the above structures,and at least one of a housing and a touch sensor. Another embodiment ofthe present invention is a lighting device including the electronicdevice having any of the above structures, and at least one of ahousing, a connection terminal, and a protective cover. The category ofone embodiment of the present invention includes not only alight-emitting device including an electronic device but also anelectronic appliance including a light-emitting device. Accordingly, thelight-emitting device in this specification refers to an image displaydevice or alight source (including alighting device). A display modulein which a connector such as an FPC (Flexible Printed Circuit) or a TCP(Tape Carrier Package) is connected to a light-emitting element, adisplay module in which a printed wiring board is provided on the tip ofa TCP, and a display module in which an IC (integrated circuit) isdirectly mounted on an electronic device by a COG (Chip On Glass) methodare also embodiments of the present invention.

Effect of the Invention

One embodiment of the present invention can provide an electronic devicehaving high outcoupling efficiency. Another embodiment of the presentinvention can provide an electronic device including a layer with a lowrefractive index. Another embodiment of the present invention canprovide an electronic device with low driving voltage. Anotherembodiment of the present invention can provide an electronic devicewith reduced power consumption. Another embodiment of the presentinvention can provide an electronic device with high reliability.Another embodiment of the present invention can provide an electronicdevice having high luminous efficiency. Another embodiment of thepresent invention can provide a novel electronic device. Anotherembodiment of the present invention can provide an electronic devicehaving an excellent light-trapping effect. Another embodiment of thepresent invention can provide a novel semiconductor device.

Note that the description of these effects does not preclude theexistence of other effects. One embodiment of the present invention doesnot necessarily achieve all the effects listed above. Note that othereffects will be apparent from the description of the specification, thedrawings, the claims, and the like, and other effects can be derivedfrom the description of the specification, the drawings, the claims, andthe like.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a schematic cross-sectional view of an electronic device ofone embodiment of the present invention.

FIGS. 2A and 2B are a schematic cross-sectional view of a light-emittingelement of one embodiment of the present invention and a view showing anoptical path length, and an example of the light-emitting layer.

FIGS. 3A-3C are schematic cross-sectional views of a light-emittingelement of one embodiment of the present invention, an example of thelight-emitting layer, and a view showing correlations of energy levelsof a light-emitting layer.

FIGS. 4A-4C are schematic cross-sectional views of a light-emittingelement of one embodiment of the present invention, an example of thelight-emitting layer, and a view showing correlations of energy levelsof a light-emitting layer.

FIGS. 5A and 5B are conceptional views of an active matrixlight-emitting device of one embodiment of the present invention.

FIGS. 6A and 6B are conceptional views of an active matrixlight-emitting device of one embodiment of the present invention.

FIG. 7 is a conceptual view of an active matrix light-emitting device ofone embodiment of the present invention.

FIGS. 8A-8D are schematic views of electronic appliances of embodimentsof the present invention.

FIGS. 9A-9E are schematic views of electronic appliances of embodimentsof the present invention.

FIGS. 10A-10C are views showing lighting devices of embodiments of thepresent invention.

FIG. 11 is a view showing a lighting device of one embodiment of thepresent invention.

FIG. 12 is a view showing refractive indices in Example.

FIG. 13 is a view showing current efficiency-luminance characteristicsof light-emitting elements in Example.

FIG. 14 is a view showing current density-voltage characteristics oflight-emitting elements in Example.

FIG. 15 is a view showing external quantum efficiency-luminancecharacteristics of light-emitting elements in Example.

FIG. 16 is a view showing emission spectra in Example.

FIG. 17 is a view showing external quantum efficiency-chromaticity xcharacteristics of light-emitting elements in Example.

FIG. 18 is a view showing a relation between external quantum efficiencyand a volume ratio of MoO₃ in Example.

FIG. 19 is a view showing refractive indices in Example.

FIG. 20 is a view showing current efficiency-luminance characteristicsof light-emitting elements in Example.

FIG. 21 is a view showing current density-voltage characteristics oflight-emitting elements in Example.

FIG. 22 is a view showing external quantum efficiency-luminancecharacteristics of light-emitting elements in Example.

FIG. 23 is a view showing emission spectra in Example.

FIG. 24 is a view showing external quantum efficiency-chromaticity xcharacteristics of light-emitting elements in Example.

FIG. 25 is a view showing refractive indices in Example.

FIG. 26 is a view showing current efficiency-luminance characteristicsof light-emitting elements in Example.

FIG. 27 is a view showing current density-voltage characteristics oflight-emitting elements in Example.

FIG. 28 is a view showing external quantum efficiency-luminancecharacteristics of light-emitting elements in Example.

FIG. 29 is a view showing emission spectra in Example.

FIG. 30 is a view showing reliability test results in Example.

FIG. 31 is a view showing external quantum efficiency-chromaticity xcharacteristics of light-emitting elements in Example.

FIG. 32 is a view showing external quantum efficiency-chromaticity ycharacteristics of light-emitting elements in Example.

MODE FOR CARRYING OUT THE INVENTION

Embodiments of the present invention are described in detail below withreference to the drawings. Note that the present invention is notlimited to description below, and modes and details of the presentinvention can be variously modified without departing from the spiritand scope of the present invention. Thus, the present invention shouldnot be interpreted as being limited to the description of theembodiments below.

Note that the position, size, range, or the like of each component shownin drawings and the like does not represent the actual position, size,range, or the like in some cases for easy understanding. Therefore, thedisclosed invention is not necessarily limited to the position, size,range, or the like disclosed in the drawings and the like.

The ordinal numbers such as first and second in this specification andthe like are used for convenience and do not denote the order of stepsor the stacking order of layers in some cases. Therefore, for example,description can be made even when “first” is replaced with “second”,“third”, or the like, as appropriate. In addition, the ordinal numbersin this specification and the like do not correspond to the ordinalnumbers which are used to specify one embodiment of the presentinvention in some cases.

In describing structures of the invention in this specification and thelike with reference to the drawings, common numerals are used for thesame components in different drawings in some cases.

In this specification and the like, the term “film” and the term “layer”can be interchanged with each other. For example, the term “conductivelayer” can be changed into the term “conductive film” in some cases. Foranother example, the term “insulating film” can be changed into the term“insulating layer” in some cases.

Examples of a refractive index n includes a refractive index of anordinary ray, n Ordinary, a refractive index of an extraordinary ray, nExtraordinary, and the average of them, n average. In this specificationand the like, the simple term “refractive index” may be rephrased as naverage when anisotropy analysis is not performed, and as n Ordinarywhen anisotropy analysis is performed. Note that anisotropy isrepresented by a difference between n Ordinary and n Extraordinary. Notethat n average is a value obtained by dividing the sum of nExtraordinary and 2 n Ordinary by 3.

Note that in this specification and the like, room temperature refers toa temperature in the range of higher than or equal to 0° C. and lowerthan or equal to 40° C.

Embodiment 1

In this embodiment, an electronic device of one embodiment of thepresent invention is described below with reference to FIG. 1.

Structure Example 1 of Electronic Device

An electronic device 50 includes a pair of electrodes (an electrode 11and an electrode 12) and an organic semiconductor layer 20 between apair of substrates (a substrate 10 and a substrate 15). The organicsemiconductor layer 20 includes at least a carrier-transport layer 30and a functional layer 40. The organic semiconductor layer 20 mayinclude a plurality of functional layers.

The functional layer 40 in the electronic device 50 preferably has afunction of absorbing or emitting light. In the case where lightgenerated in the functional layer 40 is extracted from the electrode 11side, light passing through the substrate 10 passes through theelectrode 11 and the carrier-transport layer 30. In the case where lightentering the organic semiconductor layer 20 from the electrode 11 sideis absorbed by the functional layer 40, light passing through thesubstrate 10 passes through the electrode 11 and the carrier-transportlayer 30. In order that light generated in the functional layer 40 isefficiently extracted or light is efficiently absorbed by the functionallayer 40, the amount of light attenuating in the electrode 11 and thecarrier-transport layer 30 is preferably as small as possible.

However, in the electronic device 50, it is known that light attenuatesin the organic semiconductor layer 20 due to an attenuation mode calledan evanescent mode. For example, in the case where light is emitted fromthe functional layer 40, light generated in the functional layer 40attenuates due to an evanescent mode when passing through or beingreflected by the electrode 11.

It is known that the amount of attenuating light is reduced when a layerwith a low refractive index exists in layers through which light passes.In FIG. 1, using a layer with a low refractive index as thecarrier-transport layer 30 can reduce the amount of attenuating light.

However, in many cases, the carrier-transport layer 30 is required tohave a carrier-transport property or a carrier-injection property.Therefore, a carrier-accepting or carrier-donating substance is used forthe carrier-transport layer 30. The carrier-accepting orcarrier-donating substance tends to have a high refractive index,resulting in a high refractive index of the carrier-transport layer 30.That is, it is difficult to obtain a layer with a carrier-transportproperty and a low refractive index. In the case where thecarrier-accepting or carrier-donating substance is an organic compound,it is known that a saturated cyclic compound such as a cyclohexaneskeleton included in the structure of the organic compound lowers arefractive index but has a problem in heat resistance.

The present inventors have found that mixing an organic compound with alow refractive index into the carrier-transport layer 30 allowsformation of a layer with a carrier-transport property and a lowrefractive index even in the case of using a substance with a highrefractive index and an electron-accepting property. The presentinventors also have found that mixing an organic compound including anelectron-donating group and one of a tetraarylmethane skeleton and atetraarylsilane skeleton into the carrier-transport layer 30 allowsformation of a layer with a carrier-transport property and a lowrefractive index even in the case of using a substance with a highrefractive index and an electron-accepting property. In addition, theorganic compound is found to have excellent heat resistance.

The refractive index of the organic compound with a low refractive indexis preferably higher than or equal to 1 and lower than or equal to 1.75,further preferably higher than or equal to 1 and lower than or equal to1.73, still further preferably lower than or equal to 1.70. Thisstructure enables an excellent electronic device with reduced amount ofattenuating light to be obtained.

The refractive index of the organic compound including anelectron-donating group and one of a tetraarylmethane skeleton and atetraarylsilane skeleton is preferably higher than or equal to 1 andlower than or equal to 1.75, further preferably higher than or equal to1 and lower than or equal to 1.73, still further preferably lower thanor equal to 1.70. This structure enables an electronic device withreduced amount of attenuating light and excellent outcoupling efficiencyto be obtained.

Structure Example 2 of Electronic Device

A light-emitting element, which is an example of an electronic device ofone embodiment of the present invention, is described below withreference to FIG. 2.

FIG. 2(A) is a schematic cross-sectional view of a light-emittingelement 150 of one embodiment of the present invention.

The light-emitting element 150 includes a substrate 200 and a substrate210, a pair of electrodes (an electrode 101 and an electrode 102)between the substrate 200 and the substrate 210, and an EL layer 100provided between the pair of electrodes. The EL layer 100 includes atleast a light-emitting layer 130.

The EL layer 100 shown in FIG. 2(A) includes functional layers such as ahole-injection layer 111, a hole-transport layer 112, anelectron-transport layer 118, and an electron-injection layer 119, inaddition to the light-emitting layer 130.

Although description in this embodiment is given assuming that theelectrode 101 and the electrode 102 of the pair of electrodes serve asan anode and a cathode, respectively, the structure of thelight-emitting element 150 is not limited thereto. That is, theelectrode 101 may be a cathode, the electrode 102 may be an anode, andthe stacking order of the layers between the electrodes may be reversed.In other words, the hole-injection layer 111, the hole-transport layer112, the light-emitting layer 130, the electron-transport layer 118, andthe electron-injection layer 119 may be stacked in this order from theanode side.

Although description in this embodiment is given assuming that theelectrode 101 (anode) side is the light extraction side in FIG. 2(A),the structure of the light-emitting element 150 is not limited thereto.That is, the light extraction side may be the electrode 102 (cathode)side, or light may be extracted from both the electrode 101 and theelectrode 102.

Note that the structure of the EL layer 100 is not limited to thestructure shown in FIG. 2(A), and the EL layer 100 includes at least thelight-emitting layer 130 and does not necessarily include thehole-injection layer 111, the hole-transport layer 112, theelectron-transport layer 118, and the electron-injection layer 119. TheEL layer 100 may have a structure including functional layers which havea function such as capability of lowering a hole- or electron-injectionbarrier, improving a hole- or electron-transport property, inhibiting ahole- or electron-transport property, suppressing a quenching phenomenonby an electrode, or suppressing exciton diffusion, for example. Notethat the functional layers may each be a single layer or have astructure in which a plurality of layers are stacked.

FIG. 2(B) is a schematic cross-sectional view showing an example of thelight-emitting layer 130 shown in FIG. 2(A). The light-emitting layer130 shown in FIG. 2(B) may include a guest material 131 and a hostmaterial 132.

In order to obtain light emission from the light-emitting element 150efficiently, the light-emitting element 150 preferably has highoutcoupling efficiency. However, as described above, it is known thatthe outcoupling efficiency of an organic EL element decreases due to anattenuation mode called an evanescent mode. For example, in thelight-emitting element 150, light generated in the light-emitting layer130 attenuates due to an evanescent mode when passing through or beingreflected by the electrode 101.

In order to reduce the amount of light that attenuates due to anevanescent mode, a method in which the thicknesses of layers between thelight-emitting layer 130 and the electrode 101, such as thehole-injection layer 111 and the hole-transport layer 112, are madelarge can be employed; however, this structure brings problems such asan increase in driving voltage and high manufacturing costs.

In the light-emitting element 150, light generated in the light-emittinglayer 130 is extracted to the outside; it is known that the outcouplingefficiency is improved when there is a layer with a low refractive indexbefore light generated in the light-emitting layer 130 passes throughthe substrate 200.

Light generated in the light-emitting layer 130 passes through thehole-injection layer 111, the hole-transport layer 112, the electrode101, and the substrate 200 before being extracted to the outside. Thus,the hole-injection layer 111 or the hole-transport layer 112 preferablyhas a low refractive index. In particular, the hole-injection layer 111that is in contact with the electrode 101 preferably has a lowrefractive index.

However, in many cases, a substance having an electron-acceptingproperty is mixed with an organic compound having an electron-donatingproperty to obtain a hole-injection property of the hole-injection layer111. The substance having an electron-accepting property tends to have ahigh refractive index, resulting in a high refractive index of thehole-injection layer 111. That is, it is difficult to obtain a layerwith a hole-injection property and a low refractive index. In the casewhere the electron-accepting or electron-donating substance is anorganic compound, it is known that a saturated cyclic compound such as acyclohexane skeleton included in the structure of the organic compoundlowers a refractive index but has a problem in heat resistance.

The present inventors have found that the use of an organic compoundwith a low refractive index for the hole-injection layer 111 allowsformation of a layer with a hole-injection property and a low refractiveindex even in the case of using a substance with a high refractive indexand an electron-accepting property. The present inventors also havefound that mixing an organic compound including an electron-donatinggroup and at least one of a tetraarylmethane skeleton and atetraarylsilane skeleton into the hole-injection layer 111 allowsformation of a layer with a carrier-transport property and a lowrefractive index even in the case of using a substance with a highrefractive index and an electron-accepting property. In addition, theorganic compound is found to have excellent heat resistance. The glasstransition point (Tg) of the organic compound is preferably higher thanor equal to 100° C.

The refractive index of the organic compound with a low refractive indexis preferably higher than or equal to 1 and lower than or equal to 1.75,further preferably higher than or equal to 1 and lower than or equal to1.73, still further preferably lower than or equal to 1.70. Thisstructure enables a light-emitting element with excellent outcouplingefficiency to be obtained.

The refractive index of the organic compound including anelectron-donating group and one of a tetraarylmethane skeleton and atetraarylsilane skeleton is preferably higher than or equal to 1 andlower than or equal to 1.75, further preferably higher than or equal to1 and lower than or equal to 1.73, still further preferably lower thanor equal to 1.70. This structure enables a light-emitting element withexcellent outcoupling efficiency to be obtained.

As described above, a layer with a low refractive index between thelight-emitting layer 130 and the substrate 200 improves outcouplingefficiency; however, introduction of the layer with a low refractiveindex in addition to the hole-injection layer 111 and the hole-transportlayer 112 increases the number of layers to be formed and thus theformation process of a light-emitting element is complicated. However,in one embodiment of the present invention, a layer with a lowrefractive index and a hole-injection property can be formed; thus, theoutcoupling efficiency of a light-emitting element can be improved witha conventional formation process, i.e., while the number of layers to beformed is kept.

Similarly, in one embodiment of the present invention, a layer with alow refractive index and a hole-injection property can be formed usingan organic compound including an electron-donating group and one of atetraarylmethane skeleton and a tetraarylsilane skeleton; thus, theoutcoupling efficiency of a light-emitting element can be improved witha conventional formation process, i.e., without an increase in thenumber of layers to be formed.

One embodiment of the present invention relates to an EL layer betweenan anode and a cathode. Thus, one embodiment of the present inventioncan be combined with another technique for improving outcoupling, suchas formation of unevenness on a substrate.

In one embodiment of the present invention, an organic compound havingan electron-donating property is preferably used as an organic compoundwith a low refractive index. With such a structure, a hole-injectionproperty of the hole-injection layer 111 can be increased while arefractive index thereof is lowered, which enables a light-emittingelement with excellent outcoupling efficiency and low driving voltage tobe provided. The organic compound further preferably includes atetraarylmethane skeleton or a tetraarylsilane skeleton.

The refractive index of the hole-injection layer 111 is preferably lowerthan the refractive index of the light-emitting layer 130. With such astructure, attenuation of light emitted from the light-emitting layer130 due to an evanescent wave can be reduced. It is further preferablethat the refractive index of the hole-injection layer 111 be lower thanthe refractive index of the hole-transport layer 112, and the refractiveindex of the hole-transport layer 112 be lower than the refractive indexof the light-emitting layer 130. With such a structure, the refractiveindex difference between the light-emitting layer 130 and thehole-injection layer 111 can be reduced and thus outcoupling efficiencycan be further improved.

In order to suppress a guided wave mode of an EL layer, the number oflayers through which light generated in the light-emitting layer 130passes is preferably small. Therefore, a structure in which thelight-emitting layer 130 is in contact with the electrode 101 ispreferable in terms of outcoupling efficiency; however, this structuremight reduce the luminous efficiency of the light-emitting layer 130because of an influence of a carrier balance or an influence of aplasmon effect. Thus, the hole-injection layer 111 and thehole-transport layer 112 are layers necessary to make an EL layerfunction efficiently. For this reason, it is preferable that thehole-injection layer 111 be in contact with the hole-transport layer112, and it is further preferable that the hole-transport layer 112 bein contact with the light-emitting layer 130.

The refractive index of the hole-injection layer 111 is preferably lowerthan the refractive index of the electrode 101. With such a structure, arelation between the refractive index of the hole-injection layer 111, nHIL, and the refractive index of the electrode 101, n cat., becomes ncat./n HIL>1; thus, total reflection of light entering the electrode 101from the hole-injection layer 111 can be inhibited. That is, a guidedwave mode can be suppressed. In addition, light attenuation due to anevanescent mode caused by reflection can be suppressed.

The refractive index of the hole-injection layer 111 is preferablyhigher than or equal to 1 and lower than or equal to 1.80, furtherpreferably higher than or equal to 1 and lower than or equal to 1.78,still further preferably higher than or equal to 1 and lower than orequal to 1.75. With such a structure, excellent outcoupling efficiencycan be achieved.

In the hole-injection layer 111, an organic compound having anelectron-donating property is preferably mixed with a substance havingan electron-accepting property. With such a structure, an excellenthole-injection property can be achieved.

With regard to a mixing ratio between the organic compound and thesubstance having an electron-accepting property, a volume ratio of thesubstance having an electron-accepting property to the organic compoundis preferably greater than or equal to 0.01 and less than or equal to0.3. The present inventors have found that the hole-injection layer 111with a low refractive index can be formed using an organic compound witha low refractive index as the organic compound, even when a substancewith a high refractive index is used as the substance having anelectron-accepting property.

Light incident on an electronic device may also attenuate due to theevanescent wave. For example, in the case where the electronic device ofone embodiment of the present invention is used for a solar cell, lightattenuation due to the evanescent wave can be inhibited and thus alight-trapping effect of the solar cell can be improved. Hence, theelectronic device of one embodiment of the present invention can besuitably used for a solar cell. In that case, the functional layer 40 inthe electronic device 50 illustrated in FIG. 1 may be rephrased as anactive layer, a light-absorbing layer, or a light-generation layer.

<Organic Compound Used for Hole-Injection Layer 111>

Here, organic compounds that can be suitably used for the hole-injectionlayer 111 are described.

An organic compound with a low refractive index is preferably used forthe hole-injection layer 111. Note that a refractive index of a highmolecule is expressed by a Lorentz-Lorenz equation (formula (1)) below.

$\begin{matrix}\left\{ {{Formula}\mspace{14mu} 1} \right\rbrack & \; \\{\mspace{211mu}{\frac{n^{2} - 1}{n^{2} + 2} = {{\frac{4\pi}{3}N\;\alpha} = {{\frac{4\pi}{3}\frac{\rho\; N_{A}}{M}\alpha} = \frac{\lbrack R\rbrack}{V_{o} = \phi}}}}} & (1)\end{matrix}$

Formula (2) is obtained by modifying Formula (1).

$\begin{matrix}\left\lbrack {{Formula}\mspace{14mu} 2} \right\rbrack & \; \\{\mspace{304mu}{n = \sqrt{\frac{1 + {2\phi}}{1 - \phi}}}} & (2)\end{matrix}$

In the formula (1) and the formula (2), n represents a refractive index,a represents polarizability, N represents the number of molecules perunit volume, ρ represents a density, N_(A) represents Avogadro's number,M represents a molecular weight, V₀ represents a molar volume, and [R]represents atomic refraction.

According to the formula (2), the value of ϕ is reduced to lower therefractive index n, and according to the formula (1), the atomicrefraction [R] is reduced to reduce the value of ϕ. That is, in order tolower the refractive index n, an organic compound is selected such thatthe atomic refraction [R] is reduced.

Since the above formula is a formula for a high molecule, when theformula is used for a low molecular compound, the calculated value maybe slightly deviated but have a similar tendency; thus, an organiccompound used for the hole-injection layer 111 is preferably selectedsuch that the atomic refraction [R] is reduced. In addition, thehole-injection layer 111 preferably has a hole-injection property.Hence, it is further preferable that an organic compound used for thehole-injection layer 111 have a π-conjugated system in a molecule andalso have an electron-donating property, like an aromatic compound.Selecting such an organic compound allows formation of thehole-injection layer 111 with a low refractive index and an excellenthole-injection property.

The atomic refraction [R] tends to be small when a substituentcontaining fluorine, such as a fluoro group or a trifluoromethyl group,a cyclohexyl group, or a bond through aromatic rings that has astructure in which a conjugation between the aromatic rings is cuttypically by an sp³ hybrid orbital is included. The conjugated systemdoes not spread across a molecule in an organic compound containingnon-alternant hydrocarbon; thus, the organic compound tends to havesmall atomic refraction [R]. Thus, an organic compound used for thehole-injection layer 111 is preferably an organic compound having theabove-mentioned substituent or bond.

As an organic compound used for the hole-injection layer 111, an organiccompound including an aromatic amine skeleton, a pyrrole skeleton, or athiophene skeleton or an organic compound including an aromatic ringthat has a bulky substituent such as a methyl group, a t-butyl group, oran isopropyl group can be suitably used. These organic compounds eachhave a π-conjugated system in a molecule and thus tend to have a lowerrefractive index.

Examples of the bond through aromatic rings that has a structure inwhich a conjugation between the aromatic rings is cut include atetraarylmethane skeleton represented by General Formula (100) below, atetraarylsilane skeleton represented by General Formula (101), and acyclohexyl skeleton. A tetraarylmethane skeleton and a tetraarylsilaneskeleton each have a low refractive index and higher heat resistancethan a cyclohexyl skeleton and thus can be suitably used for thehole-injection layer 111. A thin film can be easily formed by vacuumevaporation; thus, the above skeletons can be suitably used for anelectronic device such as organic EL.

An organic compound used for the hole-injection layer 111 preferably hasan electron-donating property. Examples of a skeleton having anelectron-donating property include an aromatic amine skeleton and at-electron rich heteroaromatic ring skeleton represented by GeneralFormulae (200) to (220) below. In General Formulae (210) to (213), Xrepresents oxygen or sulfur.

The above aromatic amine skeleton (specifically, a triarylamine skeletonor the like) and the above t-electron rich heteroaromatic ring skeleton(specifically, a ring including a furan skeleton, a thiophene skeleton,a pyrrole skeleton, an azepine skeleton, or an acridine skeleton, or thelike) may each have a substituent. As the substituent, an alkyl grouphaving 1 to 6 carbon atoms, a cycloalkyl group having 3 to 6 carbonatoms, or a substituted or unsubstituted aryl group having 6 to 12carbon atoms can be selected. Specific examples of the alkyl grouphaving 1 to 6 carbon atoms include a methyl group, an ethyl group, apropyl group, an isopropyl group, a butyl group, an isobutyl group, atert-butyl group, and an n-hexyl group. Specific examples of thecycloalkyl group having 3 to 6 carbon atoms include a cyclopropyl group,a cyclobutyl group, a cyclopentyl group, and a cyclohexyl group.Specific examples of the aryl group having 6 to 12 carbon atoms includea phenyl group, a naphthyl group, and a biphenyl group. The abovesubstituents may be bonded to each other to form a ring. Examples ofsuch a case include the case where carbon at the 9-position in afluorene skeleton has two phenyl groups as substituents and the phenylgroups are bonded to each other to form a spirofluorene skeleton. Notethat an unsubstituted group has advantages in easy synthesis and aninexpensive raw material.

As described above, the skeleton having an electron-donating property ispreferably an odd-membered ring skeleton such as an aromatic amineskeleton, a pyrrole skeleton, or an azepine skeleton or an acridineskeleton. These skeletons have excellent electron-donating propertiesand small atomic refraction [R]; thus, these skeletons included in amolecule enable an organic compound with an excellent electron-donatingproperty and a low refractive index to be obtained.

Note that Ar¹ to Ar⁸ independently represent an aryl group having 6 to13 carbon atoms, or an aromatic amine skeleton or a π-electron richheteroaromatic skeleton represented by General Formulae (200) to (220)shown above. The aryl group may have substituents, and the substituentsmay be bonded to each other to form a ring. Examples of such a caseinclude the case where carbon at the 9-position in a fluorenyl group hastwo phenyl groups as substituents and the phenyl groups are bonded toeach other to form a spirofluorene skeleton. Specific examples of thearyl group having 6 to 13 carbon atoms include a phenyl group, anaphthalenyl group, and a fluorenyl group. Note that in the case wherethe aryl group has a substituent, an alkyl group having 1 to 6 carbonatoms, a cycloalkyl group having 3 to 6 carbon atoms, or an aryl grouphaving 6 to 12 carbon atoms can also be selected as the substituent.Specific examples of the alkyl group having 1 to 6 carbon atoms includea methyl group, an ethyl group, a propyl group, an isopropyl group, abutyl group, an isobutyl group, a tert-butyl group, and an n-hexylgroup. Specific examples of the cycloalkyl group having 3 to 6 carbonatoms include a cyclopropyl group, a cyclobutyl group, a cyclopentylgroup, and a cyclohexyl group. Specific examples of the aryl grouphaving 6 to 12 carbon atoms include a phenyl group and a naphthyl group.

As the aryl group represented by Ar¹ to Ar⁸, for example, a grouprepresented by any of the following structural formulae can be used.Note that the group that can be used as an aryl group is not limitedthereto.

In the case where Ar¹ to Ar⁸ are each an aryl group, the aryl group ispreferably a substituent with a relatively small extension of aπ-conjugated system, as in a substituted or unsubstituted aryl grouphaving 6 to 13 carbon atoms, and is further preferably a substituted orunsubstituted phenyl group. A substituent with a small π-conjugatedsystem tends to have small atomic refraction [R]. However, an organiccompound with a small π-conjugated system, such as alkene, is notsuitable for an electronic device because of its poor carrier-transportproperty. Thus, an organic compound with a carrier-transport propertyand a small π-conjugated system, such as an aryl group having 6 to 13carbon atoms, in particular a phenyl group, is preferably used for thehole-injection layer 111. An odd-membered ring substituent is alsopreferable because of its small atomic refraction [R].

Furthermore, R¹ to R¹¹ in General Formulae (200) to (220) independentlyrepresent any of hydrogen, an alkyl group having 1 to 6 carbon atoms, acycloalkyl group having 3 to 6 carbon atoms, and a substituted orunsubstituted aryl group having 6 to 13 carbon atoms. Specific examplesof the alkyl group having 1 to 6 carbon atoms include a methyl group, anethyl group, a propyl group, an isopropyl group, a butyl group, anisobutyl group, a tert-butyl group, and an n-hexyl group. Specificexamples of the cycloalkyl group having 3 to 6 carbon atoms include acyclopropyl group, a cyclobutyl group, a cyclopentyl group, and acyclohexyl group. Specific examples of the aryl group having 6 to 13carbon atoms include a phenyl group, a naphthyl group, a biphenyl group,and a fluorenyl group. Furthermore, the above aryl group or phenyl groupmay include substituents, and the substituents may be bonded to eachother to form a ring. As the substituent, an alkyl group having 1 to 6carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, or an arylgroup having 6 to 12 carbon atoms can also be selected. Specificexamples of the alkyl group having 1 to 6 carbon atoms include a methylgroup, an ethyl group, a propyl group, an isopropyl group, a butylgroup, an isobutyl group, a tert-butyl group, and an n-hexyl group.Specific examples of the cycloalkyl group having 3 to 6 carbon atomsinclude a cyclopropyl group, a cyclobutyl group, a cyclopentyl group,and a cyclohexyl group. Specific examples of the aryl group having 6 to12 carbon atoms include a phenyl group, a naphthyl group, and a biphenylgroup.

For example, groups represented by the following structural formulae(R-1) to (R-27) can be used as hydrogen, the alkyl group, or the arylgroup represented by R¹ to R¹¹. Note that the groups that can be used asan alkyl group or an aryl group are not limited thereto.

Furthermore, Ar⁹ to Ar¹³ in General Formulae (200) to (220) eachrepresent an arylene group having 6 to 13 carbon atoms, the arylenegroup may include substituents, and the substituents may be bonded toeach other to form a ring. Examples of such a case include the casewhere carbon at the 9-position in a fluorenyl group has two phenylgroups as substituents and the phenyl groups are bonded to each other toform a spirofluorene skeleton. Specific examples of the arylene grouphaving 6 to 13 carbon atoms include a phenylene group, a naphthalenediylgroup, a biphenylene group, and a fluorenediyl group. Note that in thecase where the arylene group has a substituent, an alkyl group having 1to 6 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, or anaryl group having 6 to 12 carbon atoms can also be selected as thesubstituent. Specific examples of the alkyl group having 1 to 6 carbonatoms include a methyl group, an ethyl group, a propyl group, anisopropyl group, a butyl group, an isobutyl group, a tert-butyl group,and an n-hexyl group. Specific examples of the cycloalkyl group having 3to 6 carbon atoms include a cyclopropyl group, a cyclobutyl group, acyclopentyl group, and a cyclohexyl group. Specific examples of the arylgroup having 6 to 12 carbon atoms include a phenyl group, a naphthylgroup, and a biphenyl group.

As the arylene group represented by Ar⁹ to Ar¹³, for example, any ofgroups represented by the following structural formulae (Ar-12) to(Ar-25) can be used. Note that the group that can be used as Ar⁹ to Ar¹³is not limited thereto.

As described above, an organic compound used for the hole-injectionlayer 111 is preferably an organic compound having a tetraarylmethaneskeleton or a tetraarylsilane skeleton and an electron-donatingproperty. Examples of the organic compound include9-(4-t-butylphenyl)-3,4-ditrityl-9H-carbazole (abbreviation: CzC),9-(4-t-butylphenyl)-3,4-ditriphenylsilyl-9H-carbazole (abbreviation:CzSi),4,4,8,8-12,12-hexa-p-toluyl-4H-8H-12H-12C-aza-dibenzo[cd,mn]pylene(abbreviation: FATPA), 4,4′-bis(dibenzo-azepin-1-yl)-biphenyl(abbreviation: BazBP), 4,4′-bis(dihydro-dibenzo-azepin-1-yl)-biphenyl(abbreviation: THBazBP), 4,4′-(diphenylmethylene)bis(N,N-diphenylamine)(abbreviation: TCBPA), and4,4′-(diphenylsilanediyl)bis(N,N-diphenylamine) (abbreviation: TSBPA).The structural formulae of them are shown below. The organic compoundhaving a tetraarylmethane skeleton or a tetraarylsilane skeleton and anelectron-donating property is not limited thereto. The structuralformulae of them are shown below.

Note that a low molecular organic compound can be suitably used for theelectronic device of one embodiment of the present invention. The use ofthe low molecular organic compound enables all the layers in the ELlayer 100 to be deposited by vacuum evaporation, so that the formationprocess can be simplified.

<<Improvement in Outcoupling Efficiency with Optical Path LengthAdjustment>>

The outcoupling efficiency of the electronic device of one embodiment ofthe present invention can be further improved by the optical path lengthadjustment. Light with a desired wavelength among light emitted from thelight-emitting layer 130 can be efficiently extracted.

For example, to efficiently extract light with a desired wavelength(wavelength: k) obtained from the light-emitting layer 130, the opticalpath length from the interface between the electrode 101 and thehole-injection layer 111 to a region where light with a desiredwavelength can be obtained in the light-emitting layer 130 (alight-emitting region 134) is preferably adjusted to around (2m′−1)λ/4(m′ is a natural number). Here, the light-emitting region means a regionwhere holes and electrons are recombined in the light-emitting layer130.

Such optical adjustment can reduce light attenuation due to anevanescent mode and thus can improve the outcoupling efficiency of thelight-emitting layer 130.

In addition, the optical path length from the interface between thesubstrate 200 and the electrode 101 to the region where light with adesired wavelength can be obtained in the light-emitting layer 130 (thelight-emitting region 134) is preferably adjusted to around mλ/2 (m is anatural number). Such optical adjustment can reduce light attenuationdue to an evanescent mode and thus can improve the outcouplingefficiency of the light-emitting layer 130.

In order to perform the optical adjustment, the thickness of thehole-injection layer 111 or the hole-transport layer 112 needs to beadjusted; however, a high refractive index of the hole-injection layer111 is likely to lengthen the optical path length, which makes itdifficult to adjust the optical path length or increases driving voltagebecause of the increased thickness of the hole-injection layer 111, insome cases. However, in one embodiment of the present invention, thehole-injection layer 111 has a low refractive index; thus, the opticalpath length can be easily adjusted and the thickness can be reduced.Therefore, not only an improvement in the outcoupling efficiency of thelight-emitting layer 130 but also simplification of the formationprocess of a light-emitting element and a light-emitting element withlow driving voltage can be achieved.

Light incident on an electronic device may also attenuate due to theevanescent wave. For example, in the case where the electronic device ofone embodiment of the present invention is used for a solar cell, lightattenuation due to the evanescent wave can be inhibited and thus alight-trapping effect of the organic solar cell can be improved. Hence,the electronic device of one embodiment of the present invention can besuitably used for a solar cell. In that case, the functional layer 40 inthe electronic device 50 illustrated in FIG. 1 may be rephrased as anactive layer.

The structure in which light is efficiently extracted by adjustment ofthe optical path length of a light-emitting element to a wavelength k ofdesired light is described above, and an example of the case where thisstructure is applied to a solar cell is described with reference toFIG. 1. The thickness between a pair of electrodes, i.e., the thicknessof the organic semiconductor layer 20 in FIG. 1, is preferably adjustedso that the optical path length is different from a wavelength λ′ oflight incident on the electronic device 50. With such a structure, lightincident on the electronic device 50 can be efficiently trapped in theelectronic device 50. In addition, in the electronic device of oneembodiment of the present invention, light attenuation due to anevanescent wave can be inhibited; thus, a light-trapping effect can beobtained more efficiently.

<Material>

Next, components of a light-emitting element, which is an example of theelectronic device of one embodiment of the present invention, aredescribed in detail below.

<<Light-Emitting Layer>>

The light-emitting layer 130 includes at least the host material 131 andpreferably further includes the guest material 132. As described later,the host material 131 may include an organic compound 131_1 and anorganic compound 131_2. In the light-emitting layer 130, the hostmaterial 131 is present in the highest proportion by weight, and theguest material 132 is dispersed in the host material 131. When the guestmaterial 132 is a fluorescent compound, the S1 level of the hostmaterial 131 (the organic compound 131_1 and the organic compound 131_2)in the light-emitting layer 130 is preferably higher than the S1 levelof the guest material (the guest material 132) in the light-emittinglayer 130. When the guest material 132 is a phosphorescent compound, theT1 level of the host material 131 (the organic compound 131_1 and theorganic compound 131_2) in the light-emitting layer 130 is preferablyhigher than the T1 level of the guest material (the guest material 132)in the light-emitting layer 130.

The organic compound 131_1 preferably includes a heteroaromatic skeletonhaving two or more nitrogen atoms and 1 to 20 carbon atoms. A compoundincluding a pyrimidine skeleton and a triazine skeleton is particularlypreferable. As the organic compound 131_1, a material having a propertyof transporting more electrons than holes (an electron-transportmaterial) can be used, and a material having an electron mobility of1×10⁻⁶ cm²/Vs or higher is preferable.

Specifically, for example, heterocyclic compounds including a diazineskeleton, such as 4,6-bis[3-(phenanthren-9-yl)phenyl]pyrimidine(abbreviation: 4,6mPnP2Pm),4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation:4,6mDBTP2Pm-II), and 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine(abbreviation: 4,6mCzP2Pm), or heterocyclic compounds including atriazine skeleton, a pyrimidine skeleton, or a triazole skeleton, suchas2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine(abbreviation: PCCzPTzn),2-{3-[3-(benzo[b]naphtho[1,2-d]furan-8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine(abbreviation: mBnfBPTzn), 2,4,6-tris(biphenyl-3-yl)-1,3,5-triazine(abbreviation: T2T),2,4,6-tris[3′-(pyridin-3-yl)-biphenyl-3-yl]-1,3,5-triazine(abbreviation: TmPPPyTz), and9-[4-(3,5-diphenyl-1H-1,2,4-triazol-1-yl)]phenyl-9H-carbazole(abbreviation: CzTAZ(1H)) are preferred because of their high stabilityand reliability. In addition, the heterocyclic compounds having theskeletons have a high electron-transport property to contribute to areduction in driving voltage. The substances described here are mainlysubstances having an electron mobility of 1×10⁻⁶ cm²/Vs or higher. Notethat other substances may also be used as long as they have a propertyof transporting more electrons than holes.

As the organic compound 131_1, a compound such as a pyridine derivative,a pyrazine derivative, a pyridazine derivative, a bipyridine derivative,a quinoxaline derivative, a dibenzoquinoxaline derivative, aphenanthroline derivative, or a purine derivative can also be used. Suchan organic compound preferably has an electron mobility of 1×10⁻⁶ cm²/Vsor higher.

Specific examples include heterocyclic compounds including a pyridineskeleton, such as bathophenanthroline (abbreviation: BPhen) andbathocuproine (abbreviation: BCP); heteroaromatic ring compoundsincluding a pyrazine skeleton, such as2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation:2mDBTPDBq-II),2-[3′-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline(abbreviation: 2mDBTBPDBq-II),2-[3′-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline(abbreviation: 2mCzBPDBq),2-[4-(3,6-diphenyl-9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline(abbreviation: 2CzPDBq-III),7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation:7mDBTPDBq-II), 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline(abbreviation: 6mDBTPDBq-II), and2-[3-(3,9′-bi-9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline(abbreviation: 2mCzCzPDBq); and heterocyclic compounds including apyridine skeleton, such as 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine(abbreviation: 35DCzPPy) and 1,3,5-tri[3-(3-pyridyl)phenyl]benzene(abbreviation: TmPyPB). Alternatively, a high molecular compound such aspoly(2,5-pyridinediyl) (abbreviation: PPy),poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,5-diyl)](abbreviation:PF-Py), orpoly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2′-bipyridine-6,6′-diyl)](abbreviation:PF-BPy) can be used. Note that other substances may also be used as longas they have a property of transporting more electrons than holes.

The organic compound 131_2 preferably includes a heteroaromatic skeletonhaving two or more nitrogen atoms and 1 to 20 carbon atoms. Inparticular, a nitrogen-containing five-membered heterocyclic skeleton ispreferable. Examples include an imidazole skeleton, a triazole skeleton,and a tetrazole skeleton. As the organic compound 131_2, a materialhaving a property of transporting more holes than electrons (ahole-transport material) can be used, and a material having a holemobility of 1×10⁻⁶ cm²/Vs or higher is preferable. Furthermore, thehole-transport material may be a high molecular compound.

Specifically,3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole(abbreviation: TAZ),9-[4-(4,5-diphenyl-4H-1,2,4-triazol-3-yl)phenyl]-9H-carbazole(abbreviation: CzTAZ1),2,2′,2″-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole)(abbreviation: TPBI),2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole(abbreviation: mDBTBIm-II), and the like can be used, for example.

As the organic compound 131_2, a compound including anothernitrogen-containing five-membered heterocyclic skeleton or a tertiaryamine skeleton can also be suitably used. Specific examples includecompounds including any of a pyrrole skeleton and an aromatic amineskeleton. Examples include an indole derivative, a carbazole derivative,and a triarylamine derivative. As the organic compound 131_2, a materialhaving a property of transporting more holes than electrons (ahole-transport material) can be used, and a material having a holemobility of 1×10⁻⁶ cm²/Vs or higher is preferable. Furthermore, thehole-transport material may be a high molecular compound.

Examples of the aromatic amine compounds that can be used as thematerial having a high hole-transport property includeN,N-di(p-tolyl)-N,N-diphenyl-p-phenylenediamine (abbreviation: DTDPPA),4,4′-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation:DPAB),N,N-bis{4-[bis(3-methylphenyl)amino]phenyl}-N,N-diphenyl-(1,1′-biphenyl)-4,4′-diamine(abbreviation: DNTPD), and1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene(abbreviation: DPA3B).

Specific examples of the carbazole derivative include3-[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole(abbreviation: PCzDPA1),3,6-bis[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole(abbreviation: PCzDPA2),3,6-bis[N-(4-diphenylaminophenyl)-N-(1-naphthyl)amino]-9-phenylcarbazole(abbreviation: PCzTPN2),3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole(abbreviation: PCzPCA1),3,6-bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole(abbreviation: PCzPCA2),3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole(abbreviation: PCzPCN1), and4,4′-bis(9-carbazolyl)-2,2′-dimethyl-biphenyl (abbreviation: dmCBP).

Other examples of the carbazole derivative include4,4′-di(N-carbazolyl)biphenyl (abbreviation: CBP),1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB),9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: CzPA), and1,4-bis[4-(N-carbazolyl)phenyl]-2,3,5,6-tetraphenylbenzene.

Furthermore, it is possible to useN,N-diphenyl-9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine(abbreviation: CzA1PA), 4-(10-phenyl-9-anthryl)triphenylamine(abbreviation: DPhPA),4-(9H-carbazol-9-yl)-4′-(10-phenyl-9-anthryl)triphenylamine(abbreviation: YGAPA),N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine(abbreviation: PCAPA),N,9-diphenyl-N-{4-[4-(10-phenyl-9-anthryl)phenyl]phenyl}-9H-carbazol-3-amine(abbreviation: PCAPBA),N,9-diphenyl-N-(9,10-diphenyl-2-anthryl)-9H-carbazol-3-amine(abbreviation: 2PCAPA),9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation:PCzPA), 3,6-diphenyl-9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole(abbreviation: DPCzPA),N,N,N′,N′,N″,N″,N″,N″-octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine(abbreviation: DBC1),1,1-bis-(4-bis(4-methyl-phenyl)-amino-phenyl)-cyclohexane (abbreviation:TAPC), or the like.

Other examples include high molecular compounds such aspoly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine)(abbreviation: PVTPA),poly[N-(4-{N-[4-(4-diphenylamino)phenyl]phenyl-N-phenylamino}phenyl)methacrylamide](abbreviation: PTPDMA), andpoly[N,N-bis(4-butylphenyl)-N,N-bis(phenyl)benzidine] (abbreviation:poly-TPD).

Examples of the material having a high hole-transport property includearomatic amine compounds such as4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB orα-NPD),N,N-bis(3-methylphenyl)-N,N-diphenyl-[1,1′-biphenyl]-4,4′-diamine(abbreviation: TPD), 4,4′,4″-tris(carbazol-9-yl)triphenylamine(abbreviation: TCTA),4,4′,4″-tris[N-(1-naphthyl)-N-phenylamino]triphenylamine (abbreviation:1′-TNATA), 4,4′,4″-tris(N,N-diphenylamino)triphenylamine (abbreviation:TDATA), 4,4′,4″-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine(abbreviation: MTDATA),4,4′-bis[N-(spiro-9,9′-bifluoren-2-yl)-N-phenylamino]biphenyl(abbreviation: BSPB), 4-phenyl-4′-(9-phenylfluoren-9-yl)triphenylamine(abbreviation: BPAFLP), 4-phenyl-3′-(9-phenylfluoren-9-yl)triphenylamine(abbreviation: mBPAFLP),N-(9,9-dimethyl-9H-fluoren-2-yl)-N-{9,9-dimethyl-2-[N-phenyl-N-(9,9-dimethyl-9H-fluoren-2-yl)amino]-9H-fluoren-7-yl}phenylamine(abbreviation: DFLADFL),N-(9,9-dimethyl-2-diphenylamino-9H-fluoren-7-yl)diphenylamine(abbreviation: DPNF),2-[N-(4-diphenylaminophenyl)-N-phenylamino]spiro-9,9′-bifluorene(abbreviation: DPASF),4-phenyl-4′-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation:PCBA1BP), 4,4′-diphenyl-4″-(9-phenyl-9H-carbazol-3-yl)triphenylamine(abbreviation: PCBBi1BP),4-(1-naphthyl)-4′-(9-phenyl-9H-carbazol-3-yl)triphenylamine(abbreviation: PCBANB),4,4′-di(1-naphthyl)-4″-(9-phenyl-9H-carbazol-3-yl)triphenylamine(abbreviation: PCBNBB),4-phenyldiphenyl-(9-phenyl-9H-carbazol-3-yl)amine (abbreviation:PCA1BP), N,N-bis(9-phenylcarbazol-3-yl)-N,N-diphenylbenzene-1,3-diamine(abbreviation: PCA2B),N,N,N′-triphenyl-N,N,N′-tris(9-phenylcarbazol-3-yl)benzene-1,3,5-triamine(abbreviation: PCA3B),N-(4-biphenyl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazol-3-amine(abbreviation: PCBiF),N-(1,1′-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine(abbreviation: PCBBiF),9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluoren-2-amine(abbreviation: PCBAF),N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]spiro-9,9′-bifluoren-2-amine(abbreviation: PCBASF),2-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]spiro-9,9′-bifluorene(abbreviation: PCASF),2,7-bis[N-(4-diphenylaminophenyl)-N-phenylamino]spiro-9,9′-bifluorene(abbreviation: DPA2SF),N-[4-(9H-carbazol-9-yl)phenyl]-N-(4-phenyl)phenylaniline (abbreviation:YGA1BP), andN,N′-bis[4-(carbazol-9-yl)phenyl]-N,N-diphenyl-9,9-dimethylfluorene-2,7-diamine(abbreviation: YGA2F). In addition, amine compounds, carbazolecompounds, and the like such as3-[4-(1-naphthyl)-phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN),3-[4-(9-phenanthryl)-phenyl]-9-phenyl-9H-carbazole (abbreviation:PCPPn), 3,3′-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP),1,3-bis(N-carbazolyl)benzene (abbreviation: mCP),3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP),3,6-di(9H-carbazol-9-yl)-9-phenyl-9H-carbazole (abbreviation: PhCzGI),and 2,8-di(9H-carbazol-9-yl)-dibenzothiophene (abbreviation: Cz2DBT) canbe used. Among the above compounds, compounds including a pyrroleskeleton or an aromatic amine skeleton are preferred because of theirhigh stability and reliability. In addition, the compounds having suchskeletons have a high hole-transport property to contribute to areduction in driving voltage.

Although the guest material 132 in the light-emitting layer 130 is notparticularly limited, an anthracene derivative, a tetracene derivative,a chrysene derivative, a phenanthrene derivative, a pyrene derivative, aperylene derivative, a stilbene derivative, an acridone derivative, acoumarin derivative, a phenoxazine derivative, a phenothiazinederivative, or the like is preferred as a fluorescent compound, and forexample, the following substances can be used.

Specific examples include5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2,2′-bipyridine (abbreviation:PAP2BPy), 5,6-bis[4′-(10-phenyl-9-anthryl)biphenyl-4-yl]-2,2′-bipyridine(abbreviation: PAPP2BPy),N,N-diphenyl-N,N-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine(abbreviation: 1,6FLPAPrn),N,N-bis(3-methylphenyl)-N,N-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine(abbreviation: 1,6mMemFLPAPrn),N,N-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-N,N-bis(4-tert-butylphenyl)pyrene-1,6-diamine(abbreviation: 1,6tBu-FLPAPrn),N,N-diphenyl-N,N-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-3,8-dicyclohexylpyrene-1,6-diamine(abbreviation: ch-1,6FLPAPrn),N,N-bis[4-(9H-carbazol-9-yl)phenyl]-N,N-diphenylstilbene-4,4′-diamine(abbreviation: YGA2S),4-(9H-carbazol-9-yl)-4′-(10-phenyl-9-anthryl)triphenylamine(abbreviation: YGAPA),4-(9H-carbazol-9-yl)-4′-(9,10-diphenyl-2-anthryl)triphenylamine(abbreviation: 2YGAPPA),N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine(abbreviation: PCAPA), perylene, 2,5,8,11-tetra(tert-butyl)perylene(abbreviation: TBP),4-(10-phenyl-9-anthryl)-4′-(9-phenyl-9H-carbazol-3-yl)triphenylamine(abbreviation: PCBAPA),N,N′-(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene)bis[N,N,N-triphenyl-1,4-phenylenediamine](abbreviation: DPABPA),N,9-diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazol-3-amine(abbreviation: 2PCAPPA),N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N,N-triphenyl-1,4-phenylenediamine(abbreviation: 2DPAPPA),N,N,N,N,N′,N′,N″,N″-octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine(abbreviation: DBC1), coumarin 30,N-(9,10-diphenyl-2-anthryl)-N,9-diphenyl-9H-carbazol-3-amine(abbreviation: 2PCAPA),N-[9,10-bis(1,1′-biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazol-3-amine(abbreviation: 2PCABPhA),N-(9,10-diphenyl-2-anthryl)-N,N,N-triphenyl-1,4-phenylenediamine(abbreviation: 2DPAPA),N-[9,10-bis(1,1′-biphenyl-2-yl)-2-anthryl]-N,N,N-triphenyl-1,4-phenylenediamine(abbreviation: 2DPABPhA),9,10-bis(1,1′-biphenyl-2-yl)-N-[4-(9H-carbazol-9-yl)phenyl]-N-phenylanthracen-2-amine(abbreviation: 2YGABPhA), N,N,9-triphenylanthracen-9-amine(abbreviation: DPhAPhA), coumarin 6, coumarin 545T,N,N-diphenylquinacridone (abbreviation: DPQd), rubrene,2,8-di-tert-butyl-5,11-bis(4-tert-butylphenyl)-6,12-diphenyltetracene(abbreviation: TBRb), Nile red,5,12-bis(1,1′-biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT),2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl-4H-pyran-4-ylidene)propanedinitrile(abbreviation: DCM1),2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile(abbreviation: DCM2),N,N,N,N-tetrakis(4-methylphenyl)tetracene-5,11-diamine (abbreviation:p-mPhTD),7,14-diphenyl-N,N,N,N-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine(abbreviation: p-mPhAFD),2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile(abbreviation: DCJTI),2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile(abbreviation: DCJTB),2-(2,6-bis{2-[4-(dimethylamino)phenyl]ethenyl}-4H-pyran-4-ylidene)propanedinitrile(abbreviation: BisDCM),2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile(abbreviation: BisDCJTM), and5,10,15,20-tetraphenylbisbenzo[5,6]indeno[1,2,3-cd:1′,2′,3′-lm]perylene.

As the guest material 132 (phosphorescent compound), an iridium-,rhodium-, or platinum-based organometallic complex or metal complex canbe used; in particular, an organoiridium complex such as aniridium-based ortho-metalated complex is preferable. Examples of anortho-metalated ligand include a 4H-triazole ligand, a 1H-triazoleligand, an imidazole ligand, a pyridine ligand, a pyrimidine ligand, apyrazine ligand, and an isoquinoline ligand. Examples of the metalcomplex include a platinum complex having a porphyrin ligand.

Examples of the substance that has an emission peak in blue or greeninclude organometallic iridium complexes including a 4H-triazoleskeleton, such astris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN²]phenyl-κC}iridium(III)(abbreviation: Ir(mpptz-dmp)₃),tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III)(abbreviation: Ir(Mptz)₃),tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazolato]iridium(III)(abbreviation: Ir(iPrptz-3b)₃), andtris[3-(5-biphenyl)-5-isopropyl-4-phenyl-4H-1,2,4-triazolato]iridium(III)(abbreviation: Ir(iPr5btz)₃); organometallic iridium complexes includinga 1H-triazole skeleton, such astris[3-methyl--(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III)(abbreviation: Ir(Mptzl-mp)₃) andtris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III)(abbreviation: Ir(Prptzl-Me)₃); organometallic iridium complexesincluding an imidazole skeleton, such asfac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III)(abbreviation: Ir(iPrpmi)₃),tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III)(abbreviation: Ir(dmpimpt-Me)₃), andtris{2-[1-(4-cyano-2,6-diisobutylphenyl)-1H-benzimidazol-2-yl-κN³]phenyl-κC}iridium(III)(abbreviation: Ir(pbi-diBuCNp)₃); and organometallic iridium complexesin which a phenylpyridine derivative having an electron-withdrawinggroup is a ligand, such asbis[2-(4′,6′-difluorophenyl)pyridinato-N,C^(2′)]iridium(III)tetrakis(1-pyrazolyl)borate (abbreviation: FIr6),bis[2-(4′,6′-difluorophenyl)pyridinato-N,C^(2′)]iridium(III) picolinate(abbreviation: FIrpic),bis{2-[3′,5′-bis(trifluoromethyl)phenyl]pyridinato-N,C^(2′)}iridium(III)picolinate (abbreviation: Ir(CF₃ppy)₂(pic)), andbis[2-(4′,6′-difluorophenyl)pyridinato-N,C^(2′)]iridium(III)acetylacetonate (abbreviation: FIr(acac)). Among the materials givenabove, the organometallic iridium complexes including anitrogen-containing five-membered heterocyclic skeleton, such as a4H-triazole skeleton, a 1H-triazole skeleton, or an imidazole skeletonhave high triplet excitation energy, reliability, and luminousefficiency and are thus especially preferable.

Examples of the substance that has an emission peak in green or yellowinclude organometallic iridium complexes including a pyrimidineskeleton, such as tris(4-methyl-6-phenylpyrimidinato)iridium(III)(abbreviation: Ir(mppm)₃),tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation:Ir(tBuppm)₃),(acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III)(abbreviation: Ir(mppm)₂(acac)),(acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III)(abbreviation: Ir(tBuppm)₂(acac)),(acetylacetonato)bis[4-(2-norbornyl)-6-phenylpyrimidinato]iridium(III)(abbreviation: Ir(nbppm)₂(acac)),(acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinato]iridium(III)(abbreviation: Ir(mpmppm)₂(acac)),(acetylacetonato)bis{4,6-dimethyl-2-[6-(2,6-dimethylphenyl)-4-pyrimidinyl-κN³]phenyl-κC}iridium(III)(abbreviation: Ir(dmppm-dmp)₂(acac)), and(acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III)(abbreviation: Ir(dppm)₂(acac)); organometallic iridium complexesincluding a pyrazine skeleton, such as(acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium(III)(abbreviation: Ir(mppr-Me)₂(acac)) and(acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazinato)iridium(III)(abbreviation: Ir(mppr-iPr)₂(acac)); organometallic iridium complexesincluding a pyridine skeleton, such astris(2-phenylpyridinato-N,C^(2′))iridium(III) (abbreviation: Ir(ppy)₃),bis(2-phenylpyridinato-N,C^(2′))iridium(III) acetylacetonate(abbreviation: Ir(ppy)₂(acac)), bis(benzo[h]quinolinato)iridium(III)acetylacetonate (abbreviation: Ir(bzq)₂(acac)),tris(benzo[h]quinolinato)iridium(III) (abbreviation: Ir(bzq)₃),tris(2-phenylquinolinato-N,C^(2′))iridium(III) (abbreviation: Ir(pq)₃),and bis(2-phenylquinolinato-N,C^(2′))iridium(III) acetylacetonate(abbreviation: Ir(pq)₂(acac)); organometallic iridium complexes such asbis(2,4-diphenyl-1,3-oxazolato-N,C^(2′))iridium(III) acetylacetonate(abbreviation: Ir(dpo)₂(acac)),bis{2-[4′-(perfluorophenyl)phenyl]pyridinato-N,C^(2′)}iridium(III)acetylacetonate (abbreviation: Ir(p-PF-ph)₂(acac)), andbis(2-phenylbenzothiazolato-N,C^(2′))iridium(III) acetylacetonate(abbreviation: Ir(bt)₂(acac)); and a rare earth metal complex such astris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviation:Tb(acac)₃(Phen)). Among the materials given above, the organometalliciridium complexes including a pyrimidine skeleton have distinctivelyhigh reliability and luminous efficiency and are thus especiallypreferable.

Examples of the substance that has an emission peak in yellow or redinclude organometallic iridium complexes including a pyrimidineskeleton, such as(diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III)(abbreviation:Ir(5mdppm)₂(dibm)),bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III)(abbreviation: Ir(5mdppm)₂(dpm)), andbis[4,6-di(naphthalen-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III)(abbreviation: Ir(d1npm)₂(dpm)); organometallic iridium complexesincluding a pyrazine skeleton, such as(acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III)(abbreviation: Ir(tppr)₂(acac)),bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III)(abbreviation: Ir(tppr)₂(dpm)), and(acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III)(abbreviation: Ir(Fdpq)₂(acac)); organometallic iridium complexesincluding a pyridine skeleton, such astris(1-phenylisoquinolinato-N,C^(2′))iridium(III) (abbreviation:Ir(piq)₃) and bis(1-phenylisoquinolinato-N,C^(2′))iridium(III)acetylacetonate (abbreviation: Ir(piq)₂(acac)); a platinum complex suchas 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II)(abbreviation: PtOEP); and rare earth metal complexes such astris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III)(abbreviation: Eu(DBM)₃(Phen)) andtris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III)(abbreviation: Eu(TTA)₃(Phen)). Among the materials given above, theorganometallic iridium complexes including a pyrimidine skeleton havedistinctively high reliability and luminous efficiency and are thusespecially preferable. Furthermore, the organometallic iridium complexesincluding a pyrazine skeleton can emit red light with favorablechromaticity.

The light-emitting material included in the light-emitting layer 130 ispreferably a material that can convert the triplet excitation energyinto light emission. Examples of the material that can convert thetriplet excitation energy into light emission include a thermallyactivated delayed fluorescent (TADF) material in addition to thephosphorescent compound. Therefore, it is acceptable that thephosphorescent compound in the description is replaced with thethermally activated delayed fluorescent material. Note that thethermally activated delayed fluorescent material is a material having asmall difference between the triplet excitation energy level and thesinglet excitation energy level and a function of converting tripletexcitation energy into singlet excitation energy by reverse intersystemcrossing. Thus, the TADF material can up-convert a triplet excited stateinto a singlet excited state (i.e., reverse intersystem crossing ispossible) using a little thermal energy and efficiently exhibit lightemission (fluorescence) from the singlet excited state. Thermallyactivated delayed fluorescence is efficiently obtained under thecondition where the difference in energy between the triplet excitationenergy level and the singlet excitation energy level is preferablylarger than 0 eV and smaller than or equal to 0.2 eV, further preferablylarger than 0 eV and smaller than or equal to 0.1 eV.

In the case where the thermally activated delayed fluorescent materialis composed of one kind of material, any of the following materials canbe used, for example.

First, a fullerene, a derivative thereof, an acridine derivative such asproflavine, eosin, and the like can be given. Furthermore, ametal-containing porphyrin containing magnesium (Mg), zinc (Zn), cadmium(Cd), tin (Sn), platinum (Pt), indium (In), palladium (Pd), or the likecan be given. Examples of the metal-containing porphyrin include aprotoporphyrin-tin fluoride complex (SnF₂(Proto IX)), amesoporphyrin-tin fluoride complex (SnF₂(Meso IX)), ahematoporphyrin-tin fluoride complex (SnF₂(Hemato IX)), a coproporphyrintetramethyl ester-tin fluoride complex (SnF₂(Copro III-4Me)), anoctaethylporphyrin-tin fluoride complex (SnF₂(OEP)), anetioporphyrin-tin fluoride complex (SnF₂(Etio I)), and anoctaethylporphyrin-platinum chloride complex (PtCl₂OEP).

As the thermally activated delayed fluorescent material composed of onekind of material, a heterocyclic compound including a π-electron richheteroaromatic ring and a π-electron deficient heteroaromatic ring canalso be used. Specific examples include2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine(abbreviation: PIC-TRZ),2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine(abbreviation: PCCzPTzn),2-[4-(10H-phenoxazin-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine(abbreviation: PXZ-TRZ),3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole(abbreviation: PPZ-3TPT),3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation:ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone(abbreviation: DMAC-DPS), and10-phenyl-10H,10′H-spiro[acridin-9,9′-anthracen]-10′-one (abbreviation:ACRSA). The heterocyclic compound is preferable because of its highelectron-transport property and hole-transport property due to theπ-electron rich heteroaromatic ring and the π-electron deficientheteroaromatic ring contained therein. Among skeletons having theπ-electron deficient heteroaromatic ring, a diazine skeleton (apyrimidine skeleton, a pyrazine skeleton, or a pyridazine skeleton) anda triazine skeleton are particularly preferable because of their highstability and reliability. Among skeletons having the π-electron richheteroaromatic ring, an acridine skeleton, a phenoxazine skeleton, athiophene skeleton, a furan skeleton, and a pyrrole skeleton have highstability and reliability; therefore, one or more of these skeletons arepreferably included. As the pyrrole skeleton, an indole skeleton, acarbazole skeleton, or a 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazoleskeleton is particularly preferred. Note that a substance in which theπ-electron rich heteroaromatic ring is directly bonded to the π-electrondeficient heteroaromatic ring is particularly preferable because thedonor property of the π-electron rich heteroaromatic ring and theacceptor property of the π-electron deficient heteroaromatic ring areboth increased and the difference between the energy level in thesinglet excited state and the energy level in the triplet excited statebecomes small.

The light-emitting layer 130 may contain another material in addition tothe host material 131 and the guest material 132.

Examples of the material that can be used for the light-emitting layer130 are, but not limited to, condensed polycyclic aromatic compoundssuch as anthracene derivatives, phenanthrene derivatives, pyrenederivatives, chrysene derivatives, and dibenzo[g,p]chrysene derivatives,and specific examples include 9,10-diphenylanthracene (abbreviation:DPAnth),6,12-dimethoxy-5,11-diphenylchrysene,9,10-bis(3,5-diphenylphenyl)anthracene(abbreviation: DPPA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA),2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA),9,9′-bianthryl (abbreviation: BANT),9,9′-(stilbene-3,3′-diyl)diphenanthrene (abbreviation:DPNS),9,9′-(stilbene-4,4′-diyl)diphenanthrene (abbreviation: DPNS2), and1,3,5-tri(1-pyrenyl)benzene (abbreviation: TPB3). One or more substanceshaving a singlet excitation energy level or a triplet excitation energylevel higher than the excitation energy level of the guest material 132are selected from these substances and known substances.

For example, a compound including a heteroaromatic skeleton, such as anoxadiazole derivative, can be used for the light-emitting layer 130.Specific examples include heterocyclic compounds such as2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation:PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene(abbreviation: OXD-7),9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation:CO11), and 4,4′-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation:BzOs).

In addition, a metal complex (e.g., a zinc- or aluminum-based metalcomplex) with a heterocycle, for example, can be used for thelight-emitting layer 130. Examples include metal complexes having aquinoline ligand, a benzoquinoline ligand, an oxazole ligand, and athiazole ligand. Specific examples include metal complexes including aquinoline skeleton or a benzoquinoline skeleton, such astris(8-quinolinolato)aluminum(III) (abbreviation: Alq),tris(4-methyl-8-quinolinolato)aluminum(III) (abbreviation: Almq₃),bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq2),bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III)(abbreviation: BAlq), and bis(8-quinolinolato)zinc(II) (abbreviation:Znq). Alternatively, a metal complex having an oxazole-based orthiazole-based ligand, such as bis[2-(2-benzoxazolyl)phenolato]zinc(II)(abbreviation: ZnPBO) or bis[2-(2-benzothiazolyl)phenolato]zinc(II)(abbreviation: ZnBTZ) can be used.

The light-emitting layer 130 can have a structure in which two or morelayers are stacked. For example, in the case where the light-emittinglayer 130 is formed by stacking a first light-emitting layer and asecond light-emitting layer in this order from the hole-transport layerside, the first light-emitting layer is formed using a substance havinga hole-transport property as the host material and the secondlight-emitting layer is formed using a substance having anelectron-transport property as the host material. Light-emittingmaterials included in the first light-emitting layer and the secondlight-emitting layer may be the same or different from each other, andthe materials may have functions of emitting light of the same color orlight of different colors. Light-emitting materials having functions ofemitting light of different colors are used for the two light-emittinglayers, so that light of a plurality of emission colors can be obtainedat the same time. It is particularly preferable to select light-emittingmaterials of the light-emitting layers so that white light can beobtained by combining light emission from the two light-emitting layers.

Note that the light-emitting layer 130 can be formed by an evaporationmethod (including a vacuum evaporation method), an inkjet method, acoating method, gravure printing, or the like. Besides theabove-mentioned materials, an inorganic compound such as a quantum dotor a high molecular compound (an oligomer, a dendrimer, a polymer, orthe like) may be included.

<<Hole-Injection Layer>>

The hole-injection layer 111 has a function of reducing a barrier forhole injection from one of the pair of electrodes (the electrode 101 orthe electrode 102) to promote hole injection and is formed using atransition metal oxide having an electron-accepting property, aphthalocyanine derivative, an aromatic amine, a heteropolyacid, or thelike. Examples of the transition metal oxide include titanium oxide,vanadium oxide, tantalum oxide, molybdenum oxide, tungsten oxide,rhenium oxide, ruthenium oxide, chromium oxide, zirconium oxide, hafniumoxide, and silver oxide; the transition metal oxide is preferablebecause it has an excellent electron-accepting property and can beeasily deposited by a vacuum evaporation method or a wet process.Examples of the phthalocyanine derivative include phthalocyanine andmetal phthalocyanine. Examples of the aromatic amine include a benzidinederivative and a phenylenediamine derivative. It is also possible to usea high molecular compound such as polythiophene or polyaniline; atypical example thereof ispoly(ethylenedioxythiophene)/poly(styrenesulfonic acid), which isself-doped polythiophene. Examples of the heteropolyacid include aphosphomolybdic acid, a phosphotungstic acid, a silicomolybdic acid, anda silicotungstic acid. The heteropolyacid and the high molecularcompound are preferable because they can be easily deposited by a wetprocess.

As the hole-injection layer 111, a layer including a composite materialof the above-described hole-transport material with a low refractiveindex and the above-described material having an electron-acceptingproperty is preferably used. With such a structure, a layer withhole-injection and hole-transport properties and a low refractive indexcan be formed. As the organic material having an electron-acceptingproperty, TCNQ, F4TCNQ, or F6TCNNQ can be suitably used. A stack of alayer containing a material having an electron-accepting property and alayer containing a hole-transport material may also be used. In a steadystate or in the presence of an electric field, electric charge can betransferred between these materials. In addition to TCNQ, F4TCNQ, andF6TCNNQ described above, examples of the organic material having anelectron-accepting property include organic acceptors such as aquinodimethane derivative, a chloranil derivative, and ahexaazatriphenylene derivative. A specific example is a compound havingan electron-withdrawing group (a halogen group or a cyano group), suchas chloranil or 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene(abbreviation: HAT-CN). A substance containing oxygen and a transitionmetal such as titanium, vanadium, tantalum, molybdenum, tungsten,rhenium, ruthenium, chromium, zirconium, hafnium, or silver can also beused. Specific examples include titanium oxide, vanadium oxide, tantalumoxide, molybdenum oxide, tungsten oxide, rhenium oxide, ruthenium oxide,chromium oxide, zirconium oxide, hafnium oxide, silver oxide, aphosphomolybdic acid, molybdenum copper, and tungsten copper. Inparticular, molybdenum oxide is preferable because it is stable in theair, has a low hygroscopic property, and is easily handled.

As described above, as the hole-transport material with a low refractiveindex used for the hole-injection layer 111, an organic compound havinga structure in which a conjugation between aromatic rings is cuttypically by an sp³ bond, or an organic compound including an aromaticring that has a bulky substituent can be suitably used. Examples of askeleton having a structure in which a conjugation between aromaticrings is cut include the tetraarylmethane skeleton and thetetraarylsilane skeleton described above. However, these compounds tendto have poor carrier-transport properties and thus are not suitable fora conventional hole-injection layer. On the other hand, theabove-described substance containing a transition metal and oxygenitself has an excellent effect of increasing a hole-injection propertybut has a problem of a high refractive index. However, it is found thatwhen the above-described substance containing a transition metal andoxygen is used, as the material exhibiting an electron-acceptingproperty, in combination with the hole-transport material with a lowrefractive index for the hole-injection layer 111, the hole-injectionlayer 111 can have hole-injection and hole-transport properties whilekeeping its refractive index low. That is, this structure can canceldisadvantages of both of the materials and offer only advantages. Thisis probably because the substance containing a transition metal oxidehas a high electron-accepting property and thus addition of a smallamount of the substance can ensure a hole-injection property.

As the hole-transport material, a material having a property oftransporting more holes than electrons can be used, and a materialhaving a hole mobility of 1×10⁻⁶ cm²/Vs or higher is preferable. Asdescribed above, the refractive index of the hole-transport material ispreferably higher than or equal to 1 and lower than or equal to 1.75,further preferably higher than or equal to 1 and lower than or equal to1.73, still further preferably higher than or equal to 1 and lower thanor equal to 1.70. Specifically, any of the aromatic amine, carbazolederivative, aromatic hydrocarbon, stilbene derivative, and the likedescribed as examples of the hole-transport material that can be used inthe light-emitting layer 130 can be used, and the heteroaromaticskeleton having two or more nitrogen atoms and 1 to 20 carbon atoms isparticularly preferably included. In particular, a nitrogen-containingfive-membered heterocyclic skeleton is preferable. Furthermore, thehole-transport material may be a high molecular compound.

Other examples of the hole-transport material include aromatichydrocarbons such as 2-tert-butyl-9,10-di(2-naphthyl)anthracene(abbreviation: t-BuDNA), 2-tert-butyl-9,10-di(1-naphthyl)anthracene,9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA),2-tert-butyl-9,10-bis(4-phenylphenyl)anthracene (abbreviation: t-BuDBA),9,10-di(2-naphthyl)anthracene (abbreviation: DNA),9,10-diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene(abbreviation: t-BuAnth), 9,10-bis(4-methyl-1-naphthyl)anthracene(abbreviation: DMNA),2-tert-butyl-9,10-bis[2-(1-naphthyl)phenyl]anthracene,9,10-bis[2-(1-naphthyl)phenyl]anthracene,2,3,6,7-tetramethyl-9,10-di(1-naphthyl)anthracene,2,3,6,7-tetramethyl-9,10-di(2-naphthyl)anthracene, 9,9′-bianthryl,10,10′-diphenyl-9,9′-bianthryl,10,10′-bis(2-phenylphenyl)-9,9′-bianthryl,10,10′-bis[(2,3,4,5,6-pentaphenyl)phenyl]-9,9′-bianthryl, anthracene,tetracene, rubrene, perylene, and 2,5,8,11-tetra(tert-butyl)perylene.Besides, pentacene, coronene, and the like can be used. The aromatichydrocarbon having a hole mobility of 1×10⁻⁶ cm²/Vs or higher and having14 to 42 carbon atoms is particularly preferably used.

The aromatic hydrocarbon may include a vinyl skeleton. Examples of thearomatic hydrocarbon having a vinyl group include4,4′-bis(2,2-diphenylvinyl)biphenyl (abbreviation: DPVBi) and9,10-bis[4-(2,2-diphenylvinyl)phenyl]anthracene (abbreviation: DPVPA).

In addition, thiophene compounds, furan compounds, fluorene compounds,triphenylene compounds, phenanthrene compounds, and the like such as4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran(abbreviation: mmDBFFLBi-II),4,4′,4″-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II),1,3,5-tri(dibenzothiophen-4-yl)benzene (abbreviation: DBT3P-II),2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene(abbreviation: DBTFLP-III),4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene(abbreviation: DBTFLP-IV), and4-[3-(triphenylen-2-yl)phenyl]dibenzothiophene (abbreviation:mDBTPTp-II) can be used. Among the above compounds, compounds includinga pyrrole skeleton, a furan skeleton, a thiophene skeleton, or anaromatic amine skeleton are preferred because of their high stabilityand reliability. In addition, the compounds including such skeletonshave a high hole-transport property to contribute to a reduction indriving voltage.

<<Hole-Transport Layer>>

The hole-transport layer 112 is a layer containing a hole-transportmaterial and can be formed using any of the hole-transport materialsdescribed as examples of the material of the hole-injection layer 111.In order that the hole-transport layer 112 can have a function oftransporting holes injected into the hole-injection layer 111 to thelight-emitting layer 130, the HOMO (Highest Occupied Molecular Orbital)level of the hole-transport layer 112 is preferably equal or close tothe HOMO level of the hole-injection layer 111.

A substance having a hole mobility of 1×10⁻⁶ cm²/Vs or higher ispreferred. Note that other substances may also be used as long as theyhave a property of transporting more holes than electrons. The layercontaining a substance having a high hole-transport property is notlimited to a single layer, and two or more layers containing theaforementioned substances may be stacked.

<<Electron-Transport Layer>>

The electron-transport layer 118 has a function of transporting, to thelight-emitting layer 130, electrons injected from the other of the pairof electrodes (the electrode 101 or the electrode 102) through theelectron-injection layer 119. A material having a property oftransporting more electrons than holes can be used as theelectron-transport material, and a material having an electron mobilityof 1×10⁻⁶ cm²/Vs or higher is preferable. As a compound that easilyaccepts electrons (a material having an electron-transport property), aπ-electron deficient heteroaromatic compound such as anitrogen-containing heteroaromatic compound or a metal complex can beused, for example. Specific examples include a pyridine derivative, abipyridine derivative, a pyrimidine derivative, a triazine derivative, aquinoxaline derivative, a dibenzoquinoxaline derivative, aphenanthroline derivative, a triazole derivative, a benzimidazolederivative, and an oxadiazole derivative, which are described above asthe electron-transport material that can be used for the light-emittinglayer 130, and a heteroaromatic skeleton having two or more nitrogenatoms and 1 to 20 carbon atoms is preferably included. A compoundincluding a pyrimidine skeleton and a triazine skeleton is particularlypreferable. A substance having an electron mobility of 1×10⁻⁶ cm²/Vs orhigher is preferable. Note that other substances may also be used forthe electron-transport layer 118 as long as they have a property oftransporting more electrons than holes. The electron-transport layer 118is not limited to a single layer, and two or more layers containing theaforementioned substances may be stacked.

In addition, metal complexes with a heterocycle, such as metal complexeshaving a quinoline ligand, a benzoquinoline ligand, an oxazole ligand,and a thiazole ligand, can be given. Specific examples include metalcomplexes having a quinoline skeleton or a benzoquinoline skeleton, suchas tris(8-quinolinolato)aluminum(III) (abbreviation: Alq),tris(4-methyl-8-quinolinolato)aluminum(III) (abbreviation: Almq₃),bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq2),bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III)(abbreviation: BAlq), and bis(8-quinolinolato)zinc(II) (abbreviation:Znq). Besides, a metal complex having an oxazole-based or thiazole-basedligand, such as bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation:ZnPBO) or bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation:ZnBTZ) can be used.

A layer that controls transfer of electron carriers may be providedbetween the electron-transport layer 118 and the light-emitting layer130. This layer is formed by addition of a small amount of a substancehaving a high electron-trapping property to the material having a highelectron-transport property described above, and the layer is capable ofadjusting carrier balance by suppressing transport of electron carriers.Such a structure is very effective in suppressing a problem (e.g., adecrease in element lifetime) which occurs in the case where theelectron-transport property of the electron-transport material issignificantly higher than the hole-transport property of thehole-transport material.

<<Electron-Injection Layer>>

The electron-injection layer 119 has a function of reducing a barrierfor electron injection from the electrode 102 to promote electroninjection and can be formed using a Group 1 metal, a Group 2 metal, oran oxide, a halide, a carbonate, or the like of them, for example.Alternatively, a composite material of the electron-transport materialdescribed above and a material having a property of donating electronsthereto can be used. Examples of the material having anelectron-donating property include a Group 1 metal, a Group 2 metal, andan oxide of any of them. Specifically, an alkali metal, an alkalineearth metal, or a compound thereof, such as lithium fluoride (LiF),sodium fluoride (NaF), cesium fluoride (CsF), calcium fluoride (CaF₂),or lithium oxide (LiOx), can be used. Alternatively, a rare earth metalcompound such as erbium fluoride (ErF₃) can be used. Electride may alsobe used for the electron-injection layer 119. Examples of the electrideinclude a substance in which electrons are added at high concentrationto calcium oxide-aluminum oxide. The electron-injection layer 119 can beformed using the substance that can be used for the electron-transportlayer 118.

A composite material in which an organic compound and an electron donor(donor) are mixed may also be used for the electron-injection layer 119.Such a composite material is excellent in an electron-injection propertyand an electron-transport property because electrons are generated inthe organic compound by the electron donor. In this case, the organiccompound is preferably a material that is excellent in transporting thegenerated electrons; specifically, the above-listed substances containedin the electron-transport layer 118 (the metal complexes, heteroaromaticcompounds, and the like) can be used, for example. As the electrondonor, a substance showing an electron-donating property with respect tothe organic compound may be used. Specifically, an alkali metal, analkaline earth metal, and a rare earth metal are preferable, andexamples include lithium, sodium, cesium, magnesium, calcium, erbium,and ytterbium. In addition, an alkali metal oxide or an alkaline earthmetal oxide is preferable, and examples include lithium oxide, calciumoxide, and barium oxide. A Lewis base such as magnesium oxide can alsobe used. An organic compound such as tetrathiafulvalene (abbreviation:TTF) can also be used.

Note that the light-emitting layer, the hole-injection layer, thehole-transport layer, the electron-transport layer, and theelectron-injection layer described above can each be formed by anevaporation method (including a vacuum evaporation method), an inkjetmethod, a coating method, gravure printing, or the like. Besides theabove-mentioned materials, an inorganic compound such as a quantum dotor a high molecular compound (an oligomer, a dendrimer, a polymer, orthe like) may be used for the light-emitting layer, the hole-injectionlayer, the hole-transport layer, the electron-transport layer, and theelectron-injection layer described above.

<<Quantum Dot>>

A quantum dot is a semiconductor nanocrystal with a size of severalnanometers to several tens of nanometers and contains approximately1×10³ to 1×10⁶ atoms. Since energy shift of quantum dots depends ontheir size, quantum dots made of the same substance emit light withdifferent wavelengths depending on their size. Thus, emissionwavelengths can be easily adjusted by changing the size of quantum dotsto be used.

Since a quantum dot has an emission spectrum with a narrow peak,emission with high color purity can be obtained. In addition, a quantumdot is said to have a theoretical internal quantum efficiency ofapproximately 100%, which far exceeds that of a fluorescent organiccompound, i.e., 25%, and is comparable to that of a phosphorescentorganic compound. Therefore, the use of a quantum dot as alight-emitting material enables a light-emitting element having highluminous efficiency to be obtained. Furthermore, since a quantum dot,which is an inorganic material, has high inherent stability, alight-emitting element that is favorable also in terms of lifetime canbe obtained.

Examples of a material of a quantum dot include a Group 14 element, aGroup 15 element, a Group 16 element, a compound of a plurality of Group14 elements, a compound of an element belonging to any of Groups 4 to 14and a Group 16 element, a compound of a Group 2 element and a Group 16element, a compound of a Group 13 element and a Group 15 element, acompound of a Group 13 element and a Group 17 element, a compound of aGroup 14 element and a Group 15 element, a compound of a Group 11element and a Group 17 element, iron oxides, titanium oxides, spinelchalcogenides, and semiconductor clusters.

Specific examples include, but are not limited to, cadmium selenide;cadmium sulfide; cadmium telluride; zinc selenide; zinc oxide; zincsulfide; zinc telluride; mercury sulfide; mercury selenide; mercurytelluride; indium arsenide; indium phosphide; gallium arsenide; galliumphosphide; indium nitride; gallium nitride; indium antimonide; galliumantimonide; aluminum phosphide; aluminum arsenide; aluminum antimonide;lead selenide; lead telluride; lead sulfide; indium selenide; indiumtelluride; indium sulfide; gallium selenide; arsenic sulfide; arsenicselenide; arsenic telluride; antimony sulfide; antimony selenide;antimony telluride; bismuth sulfide; bismuth selenide; bismuthtelluride; silicon; silicon carbide; germanium; tin; selenium;tellurium; boron; carbon; phosphorus; boron nitride; boron phosphide;boron arsenide; aluminum nitride; aluminum sulfide; barium sulfide;barium selenide; barium telluride; calcium sulfide; calcium selenide;calcium telluride; beryllium sulfide; beryllium selenide; berylliumtelluride; magnesium sulfide; magnesium selenide; germanium sulfide;germanium selenide; germanium telluride; tin sulfide; tin selenide; tintelluride; lead oxide; copper fluoride; copper chloride; copper bromide;copper iodide; copper oxide; copper selenide; nickel oxide; cobaltoxide; cobalt sulfide; iron oxide; iron sulfide; manganese oxide;molybdenum sulfide; vanadium oxide; tungsten oxide; tantalum oxide;titanium oxide; zirconium oxide; silicon nitride; germanium nitride;aluminum oxide; barium titanate; a compound of selenium, zinc, andcadmium; a compound of indium, arsenic, and phosphorus; a compound ofcadmium, selenium, and sulfur; a compound of cadmium, selenium, andtellurium; a compound of indium, gallium, and arsenic; a compound ofindium, gallium, and selenium; a compound of indium, selenium, andsulfur; a compound of copper, indium, and sulfur; and combinationsthereof. What is called an alloyed quantum dot, whose composition isrepresented by a given ratio, may be used. For example, an alloyedquantum dot of cadmium, selenium, and sulfur is a means effective inobtaining blue light because the emission wavelength can be changed bychanging the content ratio of elements.

As the structure of the quantum dot, any of a core type, a core-shelltype, a core-multishell type, and the like may be used. When a core iscovered with a shell formed of another inorganic material having a widerband gap, the influence of defects and dangling bonds existing at thesurface of a nanocrystal can be reduced. Since such a structure cansignificantly improve the quantum efficiency of light emission, it ispreferable to use a core-shell or core-multishell quantum dot. Examplesof the material of a shell include zinc sulfide and zinc oxide.

Quantum dots have a high proportion of surface atoms and thus have highreactivity and easily cohere together. For this reason, it is preferablethat a protective agent be attached to, or a protective group beprovided at the surfaces of quantum dots. The attachment of theprotective agent or the provision of the protective group can preventcohesion and increase solubility in a solvent. It is also possible toreduce reactivity and improve electrical stability. Examples of theprotective agent (or the protective group) include polyoxyethylene alkylethers such as polyoxyethylene lauryl ether, polyoxyethylene stearylether, and polyoxyethylene oleyl ether; trialkylphosphines such astripropylphosphine, tributylphosphine, trihexylphosphine, andtrioctylphoshine; polyoxyethylene alkylphenyl ethers such aspolyoxyethylene n-octylphenyl ether and polyoxyethylene n-nonylphenylether; tertiary amines such as tri(n-hexyl)amine, tri(n-octyl)amine, andtri(n-decyl)amine; organophosphorus compounds such as tripropylphosphineoxide, tributylphosphine oxide, trihexylphosphine oxide,trioctylphosphine oxide, and tridecylphosphine oxide; polyethyleneglycol diesters such as polyethylene glycol dilaurate and polyethyleneglycol distearate; organic nitrogen compounds such asnitrogen-containing aromatic compounds, e.g., pyridines, lutidines,collidines, and quinolines; aminoalkanes such as hexylamine, octylamine,decylamine, dodecylamine, tetradecylamine, hexadecylamine, andoctadecylamine; dialkylsulfides such as dibutylsulfide;dialkylsulfoxides such as dimethylsulfoxide and dibutylsulfoxide;organic sulfur compounds such as sulfur-containing aromatic compounds,e.g., thiophene; higher fatty acids such as a palmitin acid, a stearicacid, and an oleic acid; alcohols; sorbitan fatty acid esters; fattyacid modified polyesters; tertiary amine modified polyurethanes; andpolyethyleneimines.

Since band gaps of quantum dots are increased as their size isdecreased, the size is adjusted as appropriate so that light with adesired wavelength can be obtained. Light emission from the quantum dotsis shifted to a blue color side, i.e., a high energy side, as thecrystal size is decreased; thus, emission wavelengths of the quantumdots can be adjusted over a wavelength range of a spectrum of anultraviolet region, a visible light region, and an infrared region bychanging the size of quantum dots. The range of size (diameter) ofquantum dots which is usually used is 0.5 nm to 20 nm, preferably 1 nmto 10 nm. The emission spectra are narrowed as the size distribution ofthe quantum dots gets smaller, and thus light can be obtained with highcolor purity. The shape of the quantum dots is not particularly limitedand may be a spherical shape, a rod shape, a circular shape, or thelike. Quantum rods which are rod-like shape quantum dots have a functionof emitting directional light; thus, quantum rods can be used as alight-emitting material to obtain a light-emitting element with higherexternal quantum efficiency.

In most organic EL elements, to improve luminous efficiency,concentration quenching of the light-emitting materials is suppressed bydispersing light-emitting materials in host materials. The hostmaterials need to be materials having singlet excitation energy levelsor triplet excitation energy levels higher than or equal to those of thelight-emitting materials. In the case of using blue phosphorescentmaterials as light-emitting materials, it is particularly difficult todevelop host materials which have triplet excitation energy levelshigher than or equal to those of the blue phosphorescent materials andwhich are excellent in terms of a lifetime. Even when a light-emittinglayer is composed of quantum dots and made without a host material, thequantum dots enable luminous efficiency to be ensured; thus, alight-emitting element that is favorable in terms of a lifetime can beobtained. In the case where the light-emitting layer is composed ofquantum dots, the quantum dots preferably have core-shell structures(including core-multishell structures).

In the case of using quantum dots as the light-emitting material in thelight-emitting layer, the thickness of the light-emitting layer is setto 3 nm to 100 nm, preferably 10 nm to 100 nm, and the quantum dotcontent of the light-emitting layer is 1 volume % to 100 volume %. Notethat it is preferable that the light-emitting layer be composed of thequantum dots. To form a light-emitting layer in which the quantum dotsare dispersed as light-emitting materials in host materials, the quantumdots may be dispersed in the host materials, or the host materials andthe quantum dots may be dissolved or dispersed in an appropriate liquidmedium, and then a wet process (e.g., a spin coating method, a castingmethod, a die coating method, blade coating method, a roll coatingmethod, an inkjet method, a printing method, a spray coating method, acurtain coating method, or a Langmuir-Blodgett method) may be employed.For a light-emitting layer containing a phosphorescent material, avacuum evaporation method, as well as the wet process, can be suitablyemployed.

As the liquid medium used for the wet process, an organic solvent ofketones such as methyl ethyl ketone and cyclohexanone; fatty acid esterssuch as ethyl acetate; halogenated hydrocarbons such as dichlorobenzene;aromatic hydrocarbons such as toluene, xylene, mesitylene, andcyclohexylbenzene; aliphatic hydrocarbons such as cyclohexane, decalin,and dodecane; dimethylformamide (DMF); dimethyl sulfoxide (DMSO); or thelike can be used.

<<Pair of Electrodes>>

The electrode 101 and the electrode 102 function as an anode and acathode of a light-emitting element. The electrode 101 and the electrode102 can be formed using a metal, an alloy, a conductive compound, amixture or a stack thereof, or the like.

One of the electrode 101 and the electrode 102 is preferably formedusing a conductive material having a function of reflecting light.Examples of the conductive material include aluminum (Al) and an alloycontaining Al. Examples of the alloy containing Al include an alloycontaining Al and L (L represents one or more of titanium (Ti),neodymium (Nd), nickel (Ni), and lanthanum (La)), such as an alloycontaining Al and Ti and an alloy containing Al, Ni, and La. Aluminumhas low resistance and high light reflectivity. Aluminum is included inearth's crust in large amount and is inexpensive; therefore, it ispossible to reduce costs for manufacturing a light-emitting element withaluminum. Alternatively, silver (Ag), an alloy containing Ag and N (Nrepresents one or more of yttrium (Y), Nd, magnesium (Mg), ytterbium(Yb), Al, Ti, gallium (Ga), zinc (Zn), indium (In), tungsten (W),manganese (Mn), tin (Sn), iron (Fe), Ni, copper (Cu), palladium (Pd),iridium (Ir), and gold (Au)), or the like may be used. Examples of thealloy containing silver include an alloy containing silver, palladium,and copper, an alloy containing silver and copper, an alloy containingsilver and magnesium, an alloy containing silver and nickel, an alloycontaining silver and gold, and an alloy containing silver andytterbium. Besides, a transition metal such as tungsten, chromium (Cr),molybdenum (Mo), copper, or titanium can be used.

Light emitted from the light-emitting layer is extracted through one orboth of the electrode 101 and the electrode 102. Thus, at least one ofthe electrode 101 and the electrode 102 is preferably formed using aconductive material having a function of transmitting light. As theconductive material, a conductive material having a visible lighttransmittance higher than or equal to 40% and lower than or equal to100%, preferably higher than or equal to 60% and lower than or equal to100%, and a resistivity lower than or equal to 1×10⁻² Ω·cm can be used.

The electrode 101 and the electrode 102 may be formed using a conductivematerial having a function of transmitting light and a function ofreflecting light. As the conductive material, a conductive materialhaving a visible light reflectivity higher than or equal to 20% andlower than or equal to 80%, preferably higher than or equal to 40% andlower than or equal to 70%, and a resistivity lower than or equal to1×10−2 Ω·cm can be used. For example, one or more kinds of conductivemetals and alloys, conductive compounds, and the like can be used.Specifically, a metal oxide such as indium tin oxide (hereinafter,referred to as ITO), indium tin oxide containing silicon or siliconoxide (ITSO), indium oxide-zinc oxide (indium zinc oxide), indiumoxide-tin oxide containing titanium, indium titanium oxide, or indiumoxide containing tungsten oxide and zinc oxide can be used. A metal thinfilm having a thickness that allows transmission of light (preferably, athickness greater than or equal to 1 nm and less than or equal to 30 nm)can also be used. As the metal, Ag, an alloy of Ag and Al, an alloy ofAg and Mg, an alloy of Ag and Au, an alloy of Ag and Yb, or the like canbe used.

In this specification and the like, as the material having a function oftransmitting light, a material that has a function of transmittingvisible light and has conductivity is used, and examples of the materialinclude, in addition to the above-described oxide conductor typified byan ITO, an oxide semiconductor and an organic conductor containing anorganic substance. Examples of the organic conductor containing anorganic substance include a composite material in which an organiccompound and an electron donor (donor) are mixed and a compositematerial in which an organic compound and an electron acceptor(acceptor) are mixed. Alternatively, an inorganic carbon-based materialsuch as graphene may be used. The resistivity of the material ispreferably lower than or equal to 1×10⁵ Ω·cm, further preferably lowerthan or equal to 1×10⁴ Ω·cm.

Alternatively, one or both of the electrode 101 and the electrode 102may be formed by stacking two or more of these materials.

In order to improve the outcoupling efficiency, a material whoserefractive index is higher than that of an electrode having a functionof transmitting light may be formed in contact with the electrode. Thematerial may be electrically conductive or non-conductive as long as ithas a function of transmitting visible light. In addition to the oxideconductors described above, an oxide semiconductor and an organicsubstance are given as the examples of the material. Examples of theorganic substance include the materials for the light-emitting layer,the hole-injection layer, the hole-transport layer, theelectron-transport layer, and the electron-injection layer.Alternatively, an inorganic carbon-based material or a metal film thinenough to transmit light can be used, and stacked layers with athickness of several nanometers to several tens of nanometers may beused.

In the case where the electrode 101 or the electrode 102 functions as acathode, the electrode preferably contains a material with a low workfunction (3.8 eV or lower). For example, it is possible to use anelement belonging to Group 1 or Group 2 of the periodic table (e.g., analkali metal such as lithium, sodium, or cesium, an alkaline earth metalsuch as calcium or strontium, or magnesium), an alloy containing any ofthese elements (e.g., Ag—Mg or Al—Li), a rare earth metal such aseuropium (Eu) or Yb, an alloy containing any of these rare earth metals,an alloy containing aluminum and silver, or the like.

When the electrode 101 or the electrode 102 is used as an anode, amaterial with a high work function (4.0 eV or higher) is preferablyused.

The electrode 101 and the electrode 102 may be a stacked layer of aconductive material having a function of reflecting light and aconductive material having a function of transmitting light. In thatcase, the electrode 101 and the electrode 102 can have a function ofadjusting the optical path length so that light of a desired wavelengthemitted from each light-emitting layer resonates and the light of adesired wavelength is intensified, which is preferable.

As the method for forming the electrode 101 and the electrode 102, asputtering method, an evaporation method, a printing method, a coatingmethod, an MBE (Molecular Beam Epitaxy) method, a CVD method, a pulsedlaser deposition method, an ALD (Atomic Layer Deposition) method, or thelike can be used as appropriate.

<<Substrate>>

A light-emitting element of one embodiment of the present invention maybe formed over a substrate of glass, plastic, or the like. As the way ofstacking layers over the substrate, layers may be sequentially stackedfrom the electrode 101 side or sequentially stacked from the electrode102 side.

For the substrate over which the light-emitting element of oneembodiment of the present invention can be formed, glass, quartz,plastic, or the like can be used, for example. Alternatively, a flexiblesubstrate can be used. The flexible substrate means a substrate that canbe bent, such as a plastic substrate made of polycarbonate orpolyarylate, for example. Alternatively, a film, an inorganic vapordeposition film, or the like can be used. Another material may be usedas long as the substrate functions as a support in a manufacturingprocess of the light-emitting element or an optical element or as longas it has a function of protecting the light-emitting element or theoptical element.

In the present invention and the like, a light-emitting element can beformed using any of a variety of substrates, for example. The type ofsubstrate is not limited particularly. Examples of the substrate includea semiconductor substrate (e.g., a single crystal substrate or a siliconsubstrate), an SOI substrate, a glass substrate, a quartz substrate, aplastic substrate, a metal substrate, a stainless steel substrate, asubstrate including stainless steel foil, a tungsten substrate, asubstrate including tungsten foil, a flexible substrate, an attachmentfilm, paper including a fibrous material, and a base material film.Examples of a glass substrate include a barium borosilicate glasssubstrate, an aluminoborosilicate glass substrate, and a soda lime glasssubstrate. Examples of the flexible substrate, the attachment film, thebase material film, and the like include substrates of plastics typifiedby polyethylene terephthalate (PET), polyethylene naphthalate (PEN),polyether sulfone (PES), and polytetrafluoroethylene (PTFE). Anotherexample is a resin such as acrylic. Furthermore, polypropylene,polyester, polyvinyl fluoride, and polyvinyl chloride can be given asexamples. Other examples are polyamide, polyimide, aramid, epoxy, aninorganic vapor deposition film, and paper.

Alternatively, a flexible substrate may be used as the substrate suchthat the light-emitting element is formed directly on the flexiblesubstrate. Further alternatively, a separation layer may be providedbetween the substrate and the light-emitting element. The separationlayer can be used when part or the whole of a light-emitting elementformed thereover is separated from the substrate and transferred ontoanother substrate. In such a case, the light-emitting element can betransferred to a substrate having low heat resistance or a flexiblesubstrate as well. For the above separation layer, a stack includinginorganic films, which are a tungsten film and a silicon oxide film, ora structure in which a resin film of polyimide or the like is formedover a substrate can be used, for example.

In other words, after the light-emitting element is formed using asubstrate, the light-emitting element may be transferred to anothersubstrate. Examples of the substrate to which the light-emitting elementis transferred include, in addition to the above substrates, acellophane substrate, a stone substrate, a wood substrate, a clothsubstrate (including a natural fiber (e.g., silk, cotton, or hemp), asynthetic fiber (e.g., nylon, polyurethane, or polyester), a regeneratedfiber (e.g., acetate, cupra, rayon, or regenerated polyester), and thelike), a leather substrate, and a rubber substrate. With the use of sucha substrate, a light-emitting element with high durability, alight-emitting element with high heat resistance, a light-emittingelement with reduced weight, or a light-emitting element with reducedthickness can be formed.

The light-emitting element 150 may be formed over an electrodeelectrically connected to a field-effect transistor (FET), for example,that is formed over any of the above-described substrates. Accordingly,an active matrix display device in which the FET controls the driving ofthe light-emitting element 150 can be fabricated.

Components of a solar cell, which is an example of the electronic deviceof one embodiment of the present invention, are described below.

For the solar cell, the material that can be used for theabove-described light-emitting element can be used. In the solar cell,the above-described hole-transport material and electron-transportmaterial can be used for a carrier-transport layer, and theabove-described hole-transport material and electron-transport material,a light-emitting material, a perovskite crystal typified by silicon orCH₃NH₃PbI₃, and the like can be used for a light-generation layer. For asubstrate and an electrode, the materials that can be used for theabove-described light-emitting element can be used.

The structure described above in this embodiment can be used asappropriate in combination with any of the other embodiments.

Embodiment 2

In this embodiment, a light-emitting element having a structuredifferent from the structure of the light-emitting element described inEmbodiment 1 and a light emission mechanism of the light-emittingelement will be described below with reference to FIG. 3 and FIG. 4.Note that in FIG. 3 and FIG. 4, a portion having a function similar tothat of a portion denoted by a reference numeral shown in FIG. 2(A) isrepresented by the same hatch pattern and the reference numeral isomitted in some cases. In addition, common reference numerals are usedfor portions having similar functions, and a detailed descriptionthereof is omitted in some cases.

Structure Example 1 of Light-Emitting Element

FIG. 3(A) is a schematic cross-sectional view of a light-emittingelement 250.

The light-emitting element 250 shown in FIG. 3(A) includes a pluralityof light-emitting units (a light-emitting unit 106 and a light-emittingunit 108 in FIG. 3(A)) between a pair of electrodes (the electrode 101and the electrode 102). Note that the electrode 101 functions as ananode and the electrode 102 functions as a cathode in the light-emittingelement 250 in the following description; however, the functions of theelectrodes may be reversed as the structure of the light-emittingelement 250.

Moreover, in the light-emitting element 250 shown in FIG. 3(A), thelight-emitting unit 106 and the light-emitting unit 108 are stacked, anda charge-generation layer 115 is provided between the light-emittingunit 106 and the light-emitting unit 108. Note that the light-emittingunit 106 and the light-emitting unit 108 may have the same structure ordifferent structures.

The light-emitting element 250 includes a light-emitting layer 120 and alight-emitting layer 170. The light-emitting unit 106 includes thehole-injection layer 111, the hole-transport layer 112, anelectron-transport layer 113, and an electron-injection layer 114 inaddition to the light-emitting layer 170. The light-emitting unit 108includes a hole-injection layer 116, a hole-transport layer 117, theelectron-transport layer 118, and the electron-injection layer 119 inaddition to the light-emitting layer 120.

The charge-generation layer 115 may have either a structure in which asubstance having an acceptor property, which is an electron acceptor, isadded to a hole-transport material or a structure in which a substancehaving a donor property, which is an electron donor, is added to anelectron-transport material. Moreover, both of these structures may bestacked.

In the case where the charge-generation layer 115 contains a compositematerial of an organic compound and a substance having an acceptorproperty, the composite material that can be used for the hole-injectionlayer 111 described in Embodiment 1 is used as the composite material.As the organic compound, a variety of compounds such as an aromaticamine compound, a carbazole compound, an aromatic hydrocarbon, and ahigh molecular compound (an oligomer, a dendrimer, a polymer, or thelike) can be used. Note that a substance having a hole mobility of1×10⁻⁶ cm²/Vs or higher is preferably used as the organic compound. Notethat other substances may also be used as long as they have a propertyof transporting more holes than electrons. Since the composite materialof an organic compound and a substance having an acceptor property hasexcellent carrier-injection and carrier-transport properties,low-voltage driving or low-current driving can be realized. Note that inthe case where a surface of a light-emitting unit on the anode side isin contact with the charge-generation layer 115, the charge-generationlayer 115 can also serve as a hole-injection layer or a hole-transportlayer of the light-emitting unit; thus, a structure in which ahole-injection layer or a hole-transport layer is not provided in thelight-emitting unit may be employed. Alternatively, in the case where asurface of a light-emitting unit on the cathode side is in contact withthe charge-generation layer 115, the charge-generation layer 115 canalso serve as an electron-injection layer or an electron-transport layerof the light-emitting unit; thus, a structure in which anelectron-injection layer or an electron-transport layer is not providedin the light-emitting unit may be employed.

Note that the charge-generation layer 115 may have a stacked-layerstructure combining a layer containing the composite material of anorganic compound and a substance having an acceptor property and a layerformed of another material. For example, a layer containing thecomposite material of an organic compound and a substance having anacceptor property and a layer containing one compound selected fromelectron-donating substances and a compound having a highelectron-transport property may be combined. Moreover, a layercontaining the composite material of an organic compound and a substancehaving an acceptor property and a layer containing a transparentconductive film may be combined.

Note that the charge-generation layer 115 sandwiched between thelight-emitting unit 106 and the light-emitting unit 108 injectselectrons into one of the light-emitting units and injects holes intothe other of the light-emitting units when voltage is applied to theelectrode 101 and the electrode 102. For example, in FIG. 3(A), thecharge-generation layer 115 injects electrons into the light-emittingunit 106 and injects holes into the light-emitting unit 108 when voltageis applied such that the potential of the electrode 101 is higher thanthe potential of the electrode 102.

Note that in terms of outcoupling efficiency, the charge-generationlayer 115 preferably has a property of transmitting visible light(specifically, the transmittance of visible light through thecharge-generation layer 115 is higher than or equal to 40%). Moreover,the charge-generation layer 115 functions even when it has lowerconductivity than the pair of electrodes (the electrode 101 and theelectrode 102).

Forming the charge-generation layer 115 using the above-describedmaterials can inhibit an increase in driving voltage in the case wherethe light-emitting layers are stacked.

The light-emitting element having two light-emitting units has beenshown in FIG. 3(A); however, a light-emitting element in which three ormore light-emitting units are stacked can be similarly employed. When aplurality of light-emitting units partitioned by the charge-generationlayer are arranged between a pair of electrodes as in the light-emittingelement 250, it is possible to realize a light-emitting element that canemit high-luminance light with the current density kept low and has along lifetime. Moreover, a light-emitting element with low powerconsumption can be realized.

Note that in each of the above structures, the emission colors exhibitedby the guest materials used in the light-emitting unit 106 and thelight-emitting unit 108 may be the same or different. In the case whereguest materials having a function of exhibiting light emission of thesame color are used for the light-emitting unit 106 and thelight-emitting unit 108, the light-emitting element 250 can exhibit highemission luminance at a small current value, which is preferred. In thecase where guest materials having a function of exhibiting lightemission of different colors are used for the light-emitting unit 106and the light-emitting unit 108, the light-emitting element 250 canexhibit multi-color light emission, which is preferred. In this case,with use of a plurality of light-emitting materials with differentemission wavelengths in one or both of the light-emitting layer 120 andthe light-emitting layer 170, the light-emitting element 250 emits lightobtained by synthesizing light emission having different emission peaks;thus, its emission spectrum has at least two maximum values.

The above structure is also suitable for obtaining white light emission.When the light-emitting layer 120 and the light-emitting layer 170 emitlight of complementary colors, white light emission can be obtained. Itis particularly suitable to select the guest materials so that whitelight emission with high color rendering properties or light emission ofat least red, green, and blue can be obtained.

In the case of a light-emitting element in which three or morelight-emitting units are stacked, colors of light emitted from guestmaterials used in the light-emitting units may be the same or differentfrom each other. In the case where a plurality of light-emitting unitsthat exhibit the same emission color are included, the emission color ofthe plurality of light-emitting units can have higher emission luminanceat a smaller current value than another color. Such a structure can besuitably used for adjustment of emission colors. The structure isparticularly suitable when guest materials that emit light of differentcolors with different luminous efficiencies are used. For example, whenthree layers of light-emitting units are included, the intensity offluorescence and phosphorescence can be adjusted with two layers oflight-emitting units that contain a fluorescent material for the samecolor and one layer of a light-emitting unit that contains aphosphorescent material that emits light of a color different from theemission color of the fluorescent material. That is, the intensity ofemitted light of each color can be adjusted with the number oflight-emitting units.

In the case of the light-emitting element including two layers offluorescent units and one layer of a phosphorescent unit, it ispreferable that the light-emitting element include the two layers of thelight-emitting units including a blue fluorescent material and the onelayer of the light-emitting unit including a yellow phosphorescentmaterial; that the light-emitting element include the two layers of thelight-emitting units including a blue fluorescent material and the onelayer of the light-emitting-layer unit including a red phosphorescentmaterial and a green phosphorescent material; or that the light-emittingelement include the two layers of the light-emitting units including ablue fluorescent material and the one layer of the light-emitting-layerunit including a red phosphorescent material, a yellow phosphorescentmaterial, and a green phosphorescent material, in which case white lightemission can be obtained efficiently.

At least one of the light-emitting layer 120 and the light-emittinglayer 170 may further be divided into layers and the divided layers maycontain different light-emitting materials. That is, at least one of thelight-emitting layer 120 and the light-emitting layer 170 can consist oftwo or more layers. For example, in the case where the light-emittinglayer is formed by stacking a first light-emitting layer and a secondlight-emitting layer in this order from the hole-transport layer side,the first light-emitting layer is formed using a material having ahole-transport property as the host material and the secondlight-emitting layer is formed using a material having anelectron-transport property as the host material. In this case, thelight-emitting materials contained in the first light-emitting layer andthe second light-emitting layer may be the same or different, and mayhave functions of exhibiting light emission of the same color orexhibiting light emission of different colors. White light emission withhigh color rendering properties that is formed of three primary colorsor four or more emission colors can also be obtained by using aplurality of light-emitting materials having functions of exhibitinglight emission of different colors

When any of the structures described in Embodiment 1 is used for atleast one of the plurality of units, a light-emitting element withexcellent outcoupling efficiency and reduced driving voltage can beprovided.

The light-emitting layer 120 included in the light-emitting unit 108includes a guest material 121 and a host material 122 as shown in FIG.3(B). Note that the guest material 121 is described below as afluorescent material.

<<Light Emission Mechanism of Light-Emitting Layer 120>>

The light emission mechanism of the light-emitting layer 120 isdescribed below.

By recombination of the electrons and holes injected from the pair ofelectrodes (the electrode 101 and the electrode 102) or thecharge-generation layer 115 in the light-emitting layer 120, excitonsare generated. The amount of the host material 122 is larger than thatof the guest material 121; thus, the excited states are formed mostly asthose of the host material 122 by the exciton generation. Note that theexciton refers to a pair of carriers (an electron and a hole).

In the case where the formed excited state of the host material 122 is asinglet excited state, singlet excitation energy transfers from the S1level of the host material 122 to the S1level of the guest material 121,thereby forming the singlet excited state of the guest material 121.

Since the guest material 121 is a fluorescent material, the formation ofa singlet excited state in the guest material 121 makes the guestmaterial 121 immediately emit light. To obtain high luminous efficiencyin this case, the fluorescence quantum yield of the guest material 121is preferably high. The same applies to the case where the excited stateformed by carrier recombination in the guest material 121 is a singletexcited state.

Next, the case where carrier recombination forms a triplet excited stateof the host material 122 is described. The correlation between energylevels of the host material 122 and the guest material 121 in this caseis shown in FIG. 3(C). The following explains what terms and numerals inFIG. 3(C) represent. Note that it is preferable that the T1 level of thehost material 122 be lower than the T1 level of the guest material 121and thus FIG. 3(C) shows such a case; however, the T1 level of the hostmaterial 122 may be higher than the T1 level of the guest material 121.

Guest (121): the guest material 121 (fluorescent material);

Host (122): the host material 122;

S_(FG): the S1 level of the guest material 121 (fluorescent material);

T_(FG): the T1 level of the guest material 121 (fluorescent material);

S_(FH): the S1 level of the host material 122; and

T_(FH): the T1 level of the host material 122.

As shown in FIG. 3(C), triplet-triplet annihilation (TTA) occurs, thatis, triplet excitons formed by carrier recombination interact with eachother, and excitation energy is transferred and spin angular momenta areexchanged between them; as a result, a reaction in which the tripletexcitons are converted into singlet excitons having energy of the S1level (S_(FH)) of the host material 122 is caused (see TTA in FIG.3(C)). The singlet excitation energy of the host material 122 istransferred from S_(FH) to the S1 level (S_(FG)) of the guest material121 having a lower energy than Sm (see Route E₁ in FIG. 3(C)), and asinglet excited state of the guest material 121 is formed, whereby theguest material 121 emits light.

Note that in the case where the density of triplet excitons in thelight-emitting layer 120 is sufficiently high (e.g., 1×10¹² cm⁻³ orhigher), only the reaction of two triplet excitons close to each othercan be considered whereas deactivation of a single triplet exciton isignored.

In the case where a triplet excited state is formed by carrierrecombination in the guest material 121, the triplet excited state ofthe guest material 121 is thermally deactivated and thus is difficult touse for light emission. However, in the case where the T1 level (T_(FH))of the host material 122 is lower than the T1 level (T_(FG)) of theguest material 121, the triplet excitation energy of the guest material121 can be transferred from the T1 level (T_(FG)) of the guest material121 to the T1 level (T_(FH)) of the host material 122 (see Route E₂ inFIG. 3(C)) and then is utilized for TTA.

In other words, the host material 122 preferably has a function ofconverting triplet excitation energy into singlet excitation energy byTTA. Accordingly, the triplet excitation energy generated in thelight-emitting layer 120 can be partly converted into singlet excitationenergy by TTA in the host material 122; then, the singlet excitationenergy can be transferred to the guest material 121 and extracted asfluorescence. In order to achieve this, the S1 level (S_(FG)) of thehost material 122 is preferably higher than the S level (S_(FG)) of theguest material 121. In addition, the T1 level (T_(FH)) of the hostmaterial 122 is preferably lower than the T1 level (T_(FG)) of the guestmaterial 121.

Note that particularly in the case where the T1 level (T_(FG)) of theguest material 121 is lower than the T1 level (T_(FH)) of the hostmaterial 122, the weight ratio of the guest material 121 to the hostmaterial 122 is preferably low. Specifically, the weight ratio of theguest material 121 to the host material 122 is preferably greater than 0and less than or equal to 0.05 when the host material 122 is 1. In sucha case, the probability of carrier recombination in the guest material121 can be reduced. In addition, the probability of energy transfer fromthe T1 level (T_(FH)) of the host material 122 to the T1 level (T_(FG))of the guest material 121 can be reduced.

Note that the host material 122 may be composed of a single compound ora plurality of compounds.

In the case where the light-emitting unit 106 and the light-emittingunit 108 contain guest materials with different emission colors, lightemitted from the light-emitting layer 120 preferably has an emissionpeak on the shorter wavelength side than light emitted from thelight-emitting layer 170. The luminance of a light-emitting elementusing a material having a high triplet excitation energy level tends todegrade quickly. With the use of TTA in the light-emitting layeremitting light with a short wavelength, a light-emitting element withsmall luminance degradation can be provided.

Structure Example 2 of Light-Emitting Element

FIG. 4(A) is a schematic cross-sectional view of a light-emittingelement 252.

The light-emitting element 252 shown in FIG. 4(A) includes, like thelight-emitting element 250 described above, a plurality oflight-emitting units (the light-emitting unit 106 and a light-emittingunit 110 in FIG. 4(A)) between a pair of electrodes (the electrode 101and the electrode 102). At least one of the light-emitting units has astructure similar to that of the EL layer 100. Note that thelight-emitting unit 106 and the light-emitting unit 110 may have thesame structure or different structures.

Moreover, in the light-emitting element 252 shown in FIG. 4(A), thelight-emitting unit 106 and the light-emitting unit 110 are stacked, andthe charge-generation layer 115 is provided between the light-emittingunit 106 and the light-emitting unit 110. For example, the EL layer 100is preferably used in the light-emitting unit 106.

The light-emitting element 252 includes a light-emitting layer 140 andthe light-emitting layer 170. The light-emitting unit 106 includes thehole-injection layer 111, the hole-transport layer 112, theelectron-transport layer 113, and the electron-injection layer 114 inaddition to the light-emitting layer 170. The light-emitting unit 110includes the hole-injection layer 116, the hole-transport layer 117, theelectron-transport layer 118, and the electron-injection layer 119 inaddition to the light-emitting layer 140.

When any of the structures described in Embodiment 1 is used for atleast one of the plurality of units, a light-emitting element withexcellent outcoupling efficiency and reduced driving voltage can beprovided.

The light-emitting layer 140 included in the light-emitting unit 110includes a guest material 141 and a host material 142 as shown in FIG.4(B). The host material 142 includes an organic compound 142_1 and anorganic compound 142_2. Note that the guest material 141 included in thelight-emitting layer 140 is described below as a phosphorescentmaterial.

<<Light Emission Mechanism of Light-Emitting Layer 140>>

Next, the light emission mechanism of the light-emitting layer 140 isdescribed below.

The organic compound 142_1 and the organic compound 142_2 which areincluded in the light-emitting layer 140 form an exciplex.

Although it is acceptable as long as the combination of the organiccompound 142_1 and the organic compound 142_2 can form an exciplex, itis preferable that one of them be a compound having a hole-transportproperty and the other be a compound having an electron-transportproperty.

FIG. 4(C) shows a correlation between the energy levels of the organiccompound 142_1, the organic compound 1422, and the guest material 141 inthe light-emitting layer 140. The following explains what terms andnumerals in FIG. 4(C) represent.

Guest (141): the guest material 141 (phosphorescent material);

Host (142_1): the organic compound 142_1 (host material);

Host (142_2): the organic compound 142_2 (host material);

T_(PG): the T1 level of the guest material 141 (phosphorescentmaterial);

S_(PH1): the S1 level of the organic compound 142_1 (host material);

T_(PH1): the T1 level of the organic compound 142_1 (host material);

S_(PH2): the S1 level of the organic compound 142_2 (host material);

T_(PH2): the T1 level of the organic compound 142_2 (host material);

S_(PE): the S1 level of the exciplex; and

T_(PE): the T1 level of the exciplex.

The organic compound 142_1 and the organic compound 142_2 form anexciplex, and the S1 level (S_(PE)) and the T1 level (T_(PE)) of theexciplex become energies adjacent to each other (see Route E₃ in FIG.4(C)).

One of the organic compound 142_1 and the organic compound 142_2receives a hole and the other receives an electron to readily form anexciplex. Alternatively, when one of the organic compounds is broughtinto an excited state, the one immediately interacts with the other toform an exciplex. Consequently, most excitons in the light-emittinglayer 140 exist as exciplexes. Because the excitation energy levels(S_(PE) and T_(PE)) of the exciplex are lower than the S1 levels(S_(PH1) and S_(PH2)) of the host materials (the organic compound 142_1and the organic compound 142_2) that form the exciplex, the excitedstate of the host material 142 can be formed with lower excitationenergy. This can reduce the driving voltage of the light-emittingelement.

Both energies (S_(PE)) and (T_(PE)) of the exciplex are then transferredto the T1 level of the guest material 141 (phosphorescent material);thus, light emission is obtained (see Routes E₄ and E₅ in FIG. 4(C)).

Note that the T1 level (T_(PE)) of the exciplex is preferably higherthan the T1 level (T_(PG)) of the guest material 141. In this way, thesinglet excitation energy and the triplet excitation energy of thegenerated exciplex can be transferred from the S1 level (S_(PE)) and theT1 level (T_(PE)) of the exciplex to the T1 level (T_(PG)) of the guestmaterial 141.

In order to efficiently transfer excitation energy from the exciplex tothe guest material 141, the T1 level (T_(PE)) of the exciplex ispreferably lower than or equal to the T1 levels (T_(PH1) and T_(PH2)) ofthe organic compounds (the organic compound 142_1 and the organiccompound 142_2) that form the exciplex. Thus, quenching of the tripletexcitation energy of the exciplex due to the organic compounds (theorganic compound 142_1 and the organic compound 142_2) is less likely tooccur, resulting in efficient energy transfer from the exciplex to theguest material 141.

In order to efficiently form an exciplex by the organic compound 142_1and the organic compound 1422, it is preferable that the HOMO level ofone of the organic compound 142_1 and the organic compound 142_2 behigher than the HOMO level of the other and the LUMO level of the one ofthe organic compound 142_1 and the organic compound 142_2 be higher thanthe LUMO level of the other. For example, when the organic compound142_1 has a hole-transport property and the organic compound 142_2 hasan electron-transport property, it is preferable that the HOMO level ofthe organic compound 142_1 be higher than the HOMO level of the organiccompound 142_2 and the LUMO level of the organic compound 142_1 behigher than the LUMO level of the organic compound 142_2. Alternatively,when the organic compound 142_2 has a hole-transport property and theorganic compound 142_1 has an electron-transport property, it ispreferable that the HOMO level of the organic compound 142_2 be higherthan the HOMO level of the organic compound 142_1 and the LUMO level ofthe organic compound 142_2 be higher than the LUMO level of the organiccompound 142_1. Specifically, the energy difference between the HOMOlevel of the organic compound 142_1 and the HOMO level of the organiccompound 142_2 is preferably greater than or equal to 0.05 eV, furtherpreferably greater than or equal to 0.1 eV, still further preferablygreater than or equal to 0.2 eV. Moreover, the energy difference betweenthe LUMO level of the organic compound 142_1 and the LUMO level of theorganic compound 142_2 is preferably greater than or equal to 0.05 eV,further preferably greater than or equal to 0.1 eV, still furtherpreferably greater than or equal to 0.2 eV.

In the case where the combination of the organic compound 142_1 and theorganic compound 142_2 is a combination of a compound having ahole-transport property and a compound having an electron-transportproperty, the carrier balance can be easily controlled by adjusting themixture ratio. Specifically, the ratio of the compound having ahole-transport property to the compound having an electron-transportproperty is preferably within a range of 1:9 to 9:1(weight ratio). Sincethe carrier balance can be easily controlled with the structure, acarrier recombination region can also be controlled easily.

When the light-emitting layer 140 has the above-described structure,light emission from the guest material 141 (phosphorescent material) ofthe light-emitting layer 140 can be obtained efficiently.

Note that the above-described processes through Routes E₃ to E₅ aresometimes referred to as ExTET (Exciplex-Triplet Energy Transfer) inthis specification and the like. In other words, in the light-emittinglayer 140, excitation energy is transferred from the exciplex to theguest material 141. In this case, the efficiency of reverse intersystemcrossing from T_(PE) to S_(PE) is not necessarily high and the emissionquantum yield from S_(PE) is not necessarily high; thus, materials canbe selected from a wide range of options.

Note that light emitted from the light-emitting layer 170 preferably hasan emission peak on the shorter wavelength side than light emitted fromthe light-emitting layer 140. The luminance of a light-emitting elementusing a phosphorescent material emitting light with a short wavelengthtends to degrade quickly. In view of the above, fluorescence is used forlight emission with a short wavelength, so that a light-emitting elementwith small luminance degradation can be provided.

<Examples of Material that can be Used in Light-Emitting Layers>

Next, materials that can be used in the light-emitting layer 120, thelight-emitting layer 140, and the light-emitting layer 170 are describedbelow.

<<Material that can be Used in Light-Emitting Layer 120>>

In the light-emitting layer 120, the host material 122 is present in thehighest proportion by weight, and the guest material 121 (fluorescentmaterial) is dispersed in the host material 122. The S1 level of thehost material 122 is preferably higher than the S level of the guestmaterial 121 (fluorescent material) while the T1 level of the hostmaterial 122 is preferably lower than the T1 level of the guest material121 (fluorescent material).

The guest material 121 in the light-emitting layer 120 is preferably,but not particularly limited to, an anthracene derivative, a tetracenederivative, a chrysene derivative, a phenanthrene derivative, a pyrenederivative, a perylene derivative, a stilbene derivative, an acridonederivative, a coumarin derivative, a phenoxazine derivative, aphenothiazine derivative, or the like, and any of the fluorescentcompounds described in Embodiment 1 can be suitably used.

Although there is no particular limitation on a material that can beused as the host material 122 in the light-emitting layer 120, examplesinclude metal complexes such as tris(8-quinolinolato)aluminum(III)(abbreviation: Alq), tris(4-methyl-8-quinolinolato)aluminum(III)(abbreviation: Almq₃), bis(10-hydroxybenzo[h]quinolinato)beryllium(II)(abbreviation: BeBq2),bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III)(abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq),bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO), andbis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ);heterocyclic compounds such as2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation:PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene(abbreviation: OXD-7),3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole(abbreviation: TAZ),2,2′,2″-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole)(abbreviation: TPBI), bathophenanthroline (abbreviation: BPhen),bathocuproine (abbreviation: BCP), and9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation:CO11); and aromatic amine compounds such as4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB orα-NPD),N,N-bis(3-methylphenyl)-N,N-diphenyl-[1,1′-biphenyl]-4,4′-diamine(abbreviation: TPD), and4,4′-bis[N-(spiro-9,9′-bifluoren-2-yl)-N-phenylamino]biphenyl(abbreviation: BSPB). Other examples include condensed polycyclicaromatic compounds such as anthracene derivatives, phenanthrenederivatives, pyrene derivatives, chrysene derivatives, anddibenzo[g,p]chrysene derivatives, and specific examples include9,10-diphenylanthracene (abbreviation: DPAnth),N,N-diphenyl-9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine(abbreviation: CzA1PA), 4-(10-phenyl-9-anthryl)triphenylamine(abbreviation: DPhPA),4-(9H-carbazol-9-yl)-4′-(10-phenyl-9-anthryl)triphenylamine(abbreviation: YGAPA),N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine(abbreviation: PCAPA),N,9-diphenyl-N-{4-[4-(10-phenyl-9-anthryl)phenyl]phenyl}-9H-carbazol-3-amine(abbreviation: PCAPBA),N,9-diphenyl-N-(9,10-diphenyl-2-anthryl)-9H-carbazol-3-amine(abbreviation: 2PCAPA), 6,12-dimethoxy-5,11-diphenylchrysene,N,N,N,N,N′,N′,N″,N″-octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine(abbreviation: DBC1), 9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole(abbreviation: CzPA),3,6-diphenyl-9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole(abbreviation: DPCzPA), 9,10-bis(3,5-diphenylphenyl)anthracene(abbreviation: DPPA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA),2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA),9,9′-bianthryl (abbreviation: BANT),9,9′-(stilbene-3,3′-diyl)diphenanthrene (abbreviation: DPNS),9,9′-(stilbene-4,4′-diyl)diphenanthrene (abbreviation: DPNS2), and3,3′,3″-(benzene-1,3,5-triyl)tripyrene (abbreviation: TPB3). One or moresubstances having a wider energy gap than the guest material 121 areselected from these substances and known substances.

The light-emitting layer 120 can have a structure in which two or morelayers are stacked. For example, in the case where the light-emittinglayer 120 is formed by stacking a first light-emitting layer and asecond light-emitting layer in this order from the hole-transport layerside, the first light-emitting layer is formed using a substance havinga hole-transport property as the host material and the secondlight-emitting layer is formed using a substance having anelectron-transport property as the host material.

In the light-emitting layer 120, the host material 122 may be composedof one kind of compound or a plurality of compounds. Alternatively, thelight-emitting layer 120 may contain another material in addition to thehost material 122 and the guest material 121.

<<Material that can be Used in Light-Emitting Layer 140>>

In the light-emitting layer 140, the host material 142 is present in thehighest proportion by weight, and the guest material 141 (phosphorescentmaterial) is dispersed in the host material 142. The T1 levels of thehost material 142 (the organic compound 142_1 and the organic compound142_2) of the light-emitting layer 140 are preferably higher than the T1level of the guest material 141.

Examples of the organic compound 1421 include, in addition to a zinc- oraluminum-based metal complex, an oxadiazole derivative, a triazolederivative, a benzimidazole derivative, a quinoxaline derivative, adibenzoquinoxaline derivative, a dibenzothiophene derivative, adibenzofuran derivative, a pyrimidine derivative, a triazine derivative,a pyridine derivative, a bipyridine derivative, and a phenanthrolinederivative. Other examples include an aromatic amine and a carbazolederivative. Specifically, the electron-transport material and thehole-transport material described in Embodiment 1 can be used.

As the organic compound 1422, a substance that can form an exciplextogether with the organic compound 142_1 is preferably used.Specifically, the electron-transport material and the hole-transportmaterial described in Embodiment 1 can be used. In that case, theorganic compound 1421, the organic compound 1422, and the guest material141 (phosphorescent material) is preferably selected such that theemission peak of the exciplex formed by the organic compound 142_1 andthe organic compound 142_2 overlaps with an absorption band,specifically an absorption band on the longest wavelength side, of atriplet MLCT (Metal to Ligand Charge Transfer) transition of the guestmaterial 141 (phosphorescent material). This makes it possible toprovide a light-emitting element with drastically improved luminousefficiency. Note that in the case where a thermally activated delayedfluorescent material is used instead of the phosphorescent material, theabsorption band on the longest wavelength side is preferably a singletabsorption band.

An example of the guest material 141 (phosphorescent material) is aniridium-, rhodium-, or platinum-based organometallic complex or metalcomplex; in particular, an organoiridium complex such as aniridium-based ortho-metalated complex is preferred. Examples of anortho-metalated ligand include a 4H-triazole ligand, a 1H-triazoleligand, an imidazole ligand, a pyridine ligand, a pyrimidine ligand, apyrazine ligand, and an isoquinoline ligand. Examples of the metalcomplex include a platinum complex having a porphyrin ligand.Specifically, the material described in Embodiment 1 as an example ofthe guest material 132 can be used.

The light-emitting material contained in the light-emitting layer 140 isa material that can convert triplet excitation energy into lightemission. Examples of the material that can convert triplet excitationenergy into light emission include, in addition to the phosphorescentmaterial, a thermally activated delayed fluorescent material. Therefore,the term “phosphorescent material” in the description may be replacedwith “thermally activated delayed fluorescent material”.

The material that exhibits thermally activated delayed fluorescence maybe a material that can form a singlet excited state from a tripletexcited state by reverse intersystem crossing by itself or may becomposed of a plurality of materials that form an exciplex.

In the case where the thermally activated delayed fluorescent materialis formed of one kind of material, any of the thermally activateddelayed fluorescent materials described in Embodiment 1 can bespecifically used.

In the case where the thermally activated delayed fluorescent materialis used as the host material, it is preferable to use a combination oftwo kinds of compounds that form an exciplex. In this case, it isparticularly preferable to use the above-described combination of acompound that easily accepts electrons and a compound that easilyaccepts holes, which form an exciplex.

<<Material that can be Used in Light-Emitting Layer 170>>

As a material that can be used in the light-emitting layer 170, amaterial that can be used in the light-emitting layer in Embodiment 1can be used, so that a light-emitting element with high luminousefficiency can be formed.

The emission colors of the light-emitting materials contained in thelight-emitting layer 120, the light-emitting layer 140, and thelight-emitting layer 170 are not limited, and they may be the same ordifferent from each other. Light emitted from the light-emittingmaterials is mixed and then extracted to the outside of the element;therefore, for example, in the case where their emission colors arecomplementary colors, the light-emitting element can emit white light.In consideration of the reliability of the light-emitting element, theemission peak wavelength of the light-emitting material contained in thelight-emitting layer 120 is preferably shorter than that of thelight-emitting material contained in the light-emitting layer 170.

Note that the light-emitting unit 106, the light-emitting unit 108, thelight-emitting unit 110, and the charge-generation layer 115 can beformed by a method such as an evaporation method (including a vacuumevaporation method), an inkjet method, a coating method, or gravureprinting.

The structures described above in this embodiment can be used in anappropriate combination with any of the structures described in theother embodiments.

Embodiment 3

FIG. 5(A) is a top view of a light-emitting device and FIG. 5(B) is across-sectional view taken along A-B and C-D in FIG. 5(A). Thislight-emitting device includes a driver circuit portion (a source sidedriver circuit) 601, a pixel portion 602, and a driver circuit portion(a gate side driver circuit) 603 which are indicated by dotted lines ascomponents controlling light emission from a light-emitting element.Furthermore, 604 denotes a sealing substrate, 625 denotes a desiccant,605 denotes a sealing material, and a portion surrounded by the sealingmaterial 605 is a space 607.

Note that a lead wiring 608 is a wiring for transmitting signals to beinput to the source side driver circuit 601 and the gate side drivercircuit 603 and receives a video signal, a clock signal, a start signal,a reset signal, and the like from an FPC (flexible printed circuit) 609serving as an external input terminal. Although only the FPC is shownhere, a printed wiring board (PWB) may be attached to the FPC. Thelight-emitting device in this specification includes not only thelight-emitting device itself but also the state where the FPC or the PWBis attached thereto.

Next, a cross-sectional structure of the above light-emitting device isdescribed with reference to FIG. 5(B). The driver circuit portion andthe pixel portion are formed over an element substrate 610; here, thesource side driver circuit 601, which is the driver circuit portion, andone pixel of the pixel portion 602 are shown.

In the source side driver circuit 601, a CMOS circuit in which ann-channel TFT 623 and a p-channel TFT 624 are combined is formed. Thedriver circuit may be formed of various CMOS circuits, PMOS circuits, orNMOS circuits. Although a driver-integrated type where the drivercircuit is formed over the substrate is described in this embodiment,the driver circuit is not necessarily integrated and can be formed notover the substrate but outside the substrate.

The pixel portion 602 is formed of pixels including a switching TFT 611,a current controlling TFT 612, and a first electrode 613 electricallyconnected to a drain thereof. Note that an insulator 614 is formed tocover an end portion of the first electrode 613. The insulator 614 canbe formed using a positive photosensitive resin film.

In order to improve the coverage of a film formed over the insulator614, the insulator 614 is formed to have a surface with curvature at itsupper end portion or lower end portion. For example, in the case where aphotosensitive acrylic is used as a material of the insulator 614, onlythe upper end portion of the insulator 614 preferably has a curvedsurface. The radius of curvature of the curved surface is preferablygreater than or equal to 0.2 μm and less than or equal to 0.3 μm. Eithera negative photosensitive material or a positive photosensitive materialcan be used as the insulator 614.

An EL layer 616 and a second electrode 617 are formed over the firstelectrode 613. Here, as a material used for the first electrode 613functioning as an anode, a material with a high work function isdesirably used. For example, a single-layer film of an ITO film, anindium tin oxide film containing silicon, an indium oxide filmcontaining zinc oxide at 2 wt % or higher and 20 wt % or lower, atitanium nitride film, a chromium film, a tungsten film, a Zn film, a Ptfilm, or the like, a stacked layer of a titanium nitride film and a filmcontaining aluminum as its main component, a three-layer structureincluding a titanium nitride film, a film containing aluminum as itsmain component, and a titanium nitride film, or the like can be used.Note that the stacked structure achieves low wiring resistance, afavorable ohmic contact, and a function as an anode.

The EL layer 616 is formed by any of a variety of methods such as anevaporation method using an evaporation mask, an inkjet method, and aspin coating method. A material included in the EL layer 616 may be alow molecular compound or a high molecular compound (including anoligomer or a dendrimer).

As a material used for the second electrode 617, which is formed overthe EL layer 616 and functions as a cathode, a material with a low workfunction (e.g., Al, Mg, Li, Ca, or an alloy or a compound thereof, suchas MgAg, MgIn, or AlLi) is preferably used. Note that in the case wherelight generated in the EL layer 616 passes through the second electrode617, a stacked layer including a thin metal film and a transparentconductive film (e.g., ITO, indium oxide containing zinc oxide at 2 wt %or higher and 20 wt % or lower, indium tin oxide containing silicon, orzinc oxide (ZnO)) is preferably used for the second electrode 617.

Note that a light-emitting element 618 is formed with the firstelectrode 613, the EL layer 616, and the second electrode 617. Thelight-emitting element 618 is preferably a light-emitting element havingany of the structures described in Embodiment 1 and Embodiment 2. Thepixel portion includes a plurality of light-emitting elements, and thelight-emitting device of this embodiment may include both thelight-emitting element with the structure described in Embodiment 1 andEmbodiment 2 and a light-emitting element with a different structure.

When the sealing substrate 604 and the element substrate 610 areattached to each other with the sealing material 605, a structure inwhich the light-emitting element 618 is provided in the space 607surrounded by the element substrate 610, the sealing substrate 604, andthe sealing material 605 is obtained. Note that the space 607 is filledwith a filler, and may be filled with an inert gas (nitrogen, argon, orthe like) or a resin and/or a desiccant.

Note that an epoxy-based resin or glass frit is preferably used for thesealing material 605. Such a material is desirably a material thattransmits moisture or oxygen as little as possible. As a material usedfor the sealing substrate 604, in addition to a glass substrate and aquartz substrate, a plastic substrate formed of FRP (Fiber ReinforcedPlastics), PVF (polyvinyl fluoride), polyester, acrylic, or the like canbe used.

As described above, the light-emitting device including thelight-emitting element described in Embodiment 1 and Embodiment 2 can beobtained.

Structure Example 1 of Light-Emitting Device

As an example of a light-emitting device, FIG. 6 shows a light-emittingdevice including a light-emitting element exhibiting white lightemission and a coloring layer (a color filter).

FIG. 6(A) shows a substrate 1001, a base insulating film 1002, a gateinsulating film 1003, gate electrodes 1006, 1007, and 1008, a firstinterlayer insulating film 1020, a second interlayer insulating film1021, a peripheral portion 1042, a pixel portion 1040, a driver circuitportion 1041, first electrodes 1024W, 1024R, 1024G, and 1024B of thelight-emitting elements, a partition 1026, an EL layer 1028, a secondelectrode 1029 of the light-emitting elements, a sealing substrate 1031,a sealing material 1032, and the like.

In FIG. 6(A) and FIG. 6(B), coloring layers (a red coloring layer 1034R,a green coloring layer 1034G, and a blue coloring layer 1034B) areprovided on a transparent base material 1033. A black layer (a blackmatrix) 1035 may be additionally provided. The transparent base material1033 provided with the coloring layers and the black layer is positionedand fixed to the substrate 1001. Note that the coloring layers and theblack layer are covered with an overcoat layer 1036. In FIG. 6(A), lightemitted from some of the light-emitting layers does not pass through thecoloring layers and is extracted to the outside, while light emittedfrom the other light-emitting layers passes through the coloring layersand is extracted to the outside. Since light that does not pass throughthe coloring layers is white and light that passes through the coloringlayers is red, blue, or green, an image can be displayed by pixels ofthe four colors.

FIG. 6(B) shows an example in which the red coloring layer 1034R, thegreen coloring layer 1034G, and the blue coloring layer 1034B are formedbetween the gate insulating film 1003 and the first interlayerinsulating film 1020. As shown in FIG. 6(B), the coloring layers may beprovided between the substrate 1001 and the sealing substrate 1031.

The above-described light-emitting device is a light-emitting devicehaving a structure in which light is extracted from the substrate 1001side where the TFTs are formed (a bottom emission type), but may be alight-emitting device having a structure in which light is extractedfrom the sealing substrate 1031 side (a top emission type).

Structure Example 2 of Light-Emitting Device

FIG. 7 shows a cross-sectional view of atop-emission light-emittingdevice. In that case, a substrate that does not transmit light can beused as the substrate 1001. The process up to the formation of aconnection electrode that connects the TFT and the anode of thelight-emitting element is performed in a manner similar to that of abottom-emission light-emitting device. Then, a third interlayerinsulating film 1037 is formed to cover an electrode 1022. Thisinsulating film may have a planarization function. The third interlayerinsulating film 1037 can be formed using a material similar to that ofthe second interlayer insulating film 1021 or using other variousmaterials.

First lower electrodes 1025W, 1025R, 1025G, and 1025B of thelight-emitting element are anodes here, but may be cathodes.Furthermore, in the case of the top-emission light-emitting device asshown in FIG. 7, the lower electrodes 1025W, 1025R, 1025G, and 1025B arepreferably reflective electrodes. Note that the second electrode 1029preferably has a function of reflecting light and a function oftransmitting light. It is preferable that a microcavity structure beused between the second electrode 1029 and the lower electrodes 1025W,1025R, 1025G, and 1025B, in which case light with a specific wavelengthis amplified. The EL layer 1028 has a structure similar to the structuredescribed in Embodiment 2, with which white light emission can beobtained.

In FIG. 6(A), FIG. 6(B), and FIG. 7, the structure of the EL layer forproviding white light emission can be achieved by, for example, using aplurality of light-emitting layers or using a plurality oflight-emitting units. Note that the structure for providing white lightemission is not limited thereto.

In a top emission structure as shown in FIG. 7, sealing can be performedwith the sealing substrate 1031 on which the coloring layers (the redcoloring layer 1034R, the green coloring layer 1034G, and the bluecoloring layer 1034B) are provided. The sealing substrate 1031 may beprovided with the black layer (black matrix) 1035 positioned betweenpixels. The coloring layers (the red coloring layer 1034R, the greencoloring layer 1034G, and the blue coloring layer 1034B) and the blacklayer (black matrix) may be covered with the overcoat layer. Note that asubstrate having a light-transmitting property is used as the sealingsubstrate 1031.

Although an example in which full color display is performed using fourcolors of red, green, blue, and white is shown here, there is noparticular limitation and full color display using three colors of red,green, and blue may be performed. Alternatively, full color displayusing four colors of red, green, blue, and yellow may be performed.

As described above, the light-emitting device including thelight-emitting element described in Embodiment 1 and Embodiment 2 can beobtained.

Note that this embodiment can be combined as appropriate with any of theother embodiments.

Embodiment 4

In this embodiment, electronic devices of embodiments of the presentinvention are described.

One embodiment of the present invention is a light-emitting elementusing organic EL, and thus, an electronic device with a flat surfacehaving high luminous efficiency and high reliability can bemanufactured. An electronic device with a curved surface, high luminousefficiency, and high reliability can be manufactured according to oneembodiment of the present invention. In addition, an electronic devicewith flexibility, high luminous efficiency, and high reliability can bemanufactured according to one embodiment of the present invention.

Examples of the electronic devices include a television device, adesktop or laptop personal computer, a monitor of a computer or thelike, a digital camera, a digital video camera, a digital photo frame, amobile phone, a portable game machine, a portable information terminal,an audio reproducing device, and a large game machine such as a pachinkomachine.

The light-emitting device of one embodiment of the present invention canachieve high visibility regardless of the intensity of external light.Thus, the light-emitting device of one embodiment of the presentinvention can be suitably used for a portable electronic device, awearable electronic device (wearable device), an e-book reader, or thelike.

A portable information terminal 900 shown in FIGS. 8(A) and 8(B)includes a housing 901, a housing 902, a display portion 903, a hingeportion 905, and the like.

The housing 901 and the housing 902 are joined together by the hingeportion 905. The portable information terminal 900 can be opened asshown in FIG. 8(B) from a folded state (FIG. 8(A)). Thus, the portableinformation terminal 900 has high portability when carried and excellentvisibility when used because of its large display region.

In the portable information terminal 900, the flexible display portion903 is provided across the housing 901 and the housing 902 which arejoined together by the hinge portion 905.

The light-emitting device manufactured using one embodiment of thepresent invention can be used for the display portion 903. Thus, theportable information terminal can be manufactured with high yield.

The display portion 903 can display at least one of text information, astill image, a moving image, and the like. When text information isdisplayed on the display portion, the portable information terminal 900can be used as an e-book reader.

When the portable information terminal 900 is opened, the displayportion 903 is held while being in a significantly curved form. Forexample, the display portion 903 is held while including a curvedportion with a radius of curvature of greater than or equal to 1 mm andless than or equal to 50 mm, preferably greater than or equal to 5 mmand less than or equal to 30 mm. Part of the display portion 903 candisplay an image while being curved since pixels are continuouslyarranged from the housing 901 to the housing 902.

The display portion 903 functions as a touch panel and can be controlledwith a finger, a stylus, or the like.

The display portion 903 is preferably formed using one flexible display.Thus, a seamless continuous image can be displayed between the housing901 and the housing 902. Note that each of the housing 901 and thehousing 902 may be provided with a display.

The hinge portion 905 preferably includes a locking mechanism so that anangle formed between the housing 901 and the housing 902 does not becomelarger than a predetermined angle when the portable information terminal900 is opened. For example, an angle at which they become locked (theyare not opened any further) is preferably greater than or equal to 900and less than 180° and can be typically 90°, 120°, 135°, 150°, 175°, orthe like. In that case, the convenience, safety, and reliability of theportable information terminal 900 can be improved.

When the hinge portion 905 includes a locking mechanism, excessive forceis not applied to the display portion 903; thus, breakage of the displayportion 903 can be prevented. Therefore, a highly reliable portableinformation terminal can be obtained.

A power button, an operation button, an external connection port, aspeaker, a microphone, or the like may be provided for the housing 901and the housing 902.

One of the housing 901 and the housing 902 is provided with a wirelesscommunication module, and data can be transmitted and received through acomputer network such as the Internet, a LAN (Local Area Network), orWi-Fi (registered trademark).

A portable information terminal 910 shown in FIG. 8(C) includes ahousing 911, a display portion 912, an operation button 913, an externalconnection port 914, a speaker 915, a microphone 916, a camera 917, andthe like.

The light-emitting device manufactured using one embodiment of thepresent invention can be used for the display portion 912. Thus, theportable information terminal can be manufactured with high yield.

The portable information terminal 910 includes a touch sensor in thedisplay portion 912. A variety of operations such as making a call andinputting a character can be performed by touch on the display portion912 with a finger, a stylus, or the like.

In addition, the operation of the operation button 913 can switch thepower ON and OFF operations and types of images displayed on the displayportion 912. For example, switching from a mail creation screen to amain menu screen can be performed.

When a sensing device such as a gyroscope sensor or an accelerationsensor is provided inside the portable information terminal 910, thedirection of display on the screen of the display portion 912 can beautomatically switched by determining the orientation (horizontal orvertical) of the portable information terminal 910. Furthermore, thedirection of display on the screen can be switched by touch on thedisplay portion 912, operation of the operation button 913, sound inputusing the microphone 916, or the like.

The portable information terminal 910 has, for example, one or morefunctions selected from a telephone set, a notebook, an informationbrowsing system, and the like. Specifically, the portable informationterminal 910 can be used as a smartphone. The portable informationterminal 910 is capable of executing a variety of applications such asmobile phone calls, e-mailing, text viewing and writing, music replay,video replay, Internet communication, and games, for example.

A camera 920 shown in FIG. 8(D) includes a housing 921, a displayportion 922, operation buttons 923, a shutter button 924, and the like.Furthermore, a detachable lens 926 is attached to the camera 920.

The light-emitting device manufactured using one embodiment of thepresent invention can be used for the display portion 922. Thus, thecamera can be manufactured with high yield.

Although the camera 920 here is configured such that the lens 926 isdetachable from the housing 921 for replacement, the lens 926 may beintegrated with the housing 921.

A still image or a moving image can be taken with the camera 920 at thepress of the shutter button 924. In addition, the display portion 922has a function of a touch panel, and images can also be taken by thetouch on the display portion 922.

Note that a stroboscope, a viewfinder, or the like can be additionallyattached to the camera 920. Alternatively, these may be incorporatedinto the housing 921.

FIGS. 9(A) to 9(E) are diagrams showing electronic devices. Theseelectronic devices include a housing 9000, a display portion 9001, aspeaker 9003, an operation key 9005 (including a power switch or anoperation switch), a connection terminal 9006, a sensor 9007 (a sensorhaving a function of measuring force, displacement, position, speed,acceleration, angular velocity, rotational frequency, distance, light,liquid, magnetism, temperature, chemical substance, sound, time,hardness, electric field, current, voltage, power, radiation, flow rate,humidity, gradient, oscillation, odor, or infrared rays), a microphone9008, and the like.

The light-emitting device manufactured using one embodiment of thepresent invention can be suitably used for the display portion 9001.Thus, the electronic devices can be manufactured with high yield.

The electronic devices shown in FIGS. 9(A) to 9(E) can have a variety offunctions. For example, they can have a function of displaying a varietyof information (a still image, a moving image, a text image, and thelike) on the display portion, a touch panel function, a function ofdisplaying a calendar, the date, the time, and the like, a function ofcontrolling processing with a variety of software (programs), a wirelesscommunication function, a function of being connected to a variety ofcomputer networks with a wireless communication function, a function oftransmitting or receiving a variety of data with a wirelesscommunication function, a function of reading a program or data storedin a storage medium and displaying the program or data on the displayportion, and the like. Note that the functions of the electronic devicesshown in FIGS. 9(A) to 9(E) are not limited to the above, and theelectronic devices may have other functions.

FIG. 9(A) is a perspective view of a wristwatch-type portableinformation terminal 9200, and FIG. 9(B) is a perspective view of awristwatch-type portable information terminal 9201.

The portable information terminal 9200 shown in FIG. 9(A) is capable ofexecuting a variety of applications such as mobile phone calls,e-mailing, text viewing and writing, music replay, Internetcommunication, and computer games. The display surface of the displayportion 9001 is curved, and an image can be displayed on the curveddisplay surface. The portable information terminal 9200 can perform nearfield communication conformable to a communication standard. Forexample, mutual communication between the portable information terminal9200 and a headset capable of wireless communication can be performed,and thus hands-free calling is possible. The portable informationterminal 9200 includes the connection terminal 9006, and data can bedirectly transmitted to and received from another information terminalvia a connector. Power charging through the connection terminal 9006 isalso possible. Note that the charging operation may be performed bywireless power feeding without through the connection terminal 9006.

Unlike in the portable information terminal shown in FIG. 9(A), thedisplay surface of the display portion 9001 is not curved in theportable information terminal 9201 shown in FIG. 9(B). Furthermore, theexternal shape of the display portion of the portable informationterminal 9201 is a non-rectangular shape (a circular shape in FIG.9(B)).

FIGS. 9(C) to 9(E) are perspective views of a foldable portableinformation terminal 9202. Note that FIG. 9(C) is a perspective view ofthe portable information terminal 9202 that is opened; FIG. 9(D) is aperspective view of the portable information terminal 9202 that is beingchanged from one of an opened state and a folded state to the other; andFIG. 9(E) is a perspective view of the portable information terminal9202 that is folded.

The portable information terminal 9202 is highly portable in the foldedstate, and is highly browsable in the opened state due to a seamlesslarge display region. The display portion 9001 of the portableinformation terminal 9202 is supported by three housings 9000 joinedtogether by hinges 9055. By being bent between two housings 9000 withthe hinges 9055, the portable information terminal 9202 can bereversibly changed in shape from the opened state to the folded state.For example, the portable information terminal 9202 can be bent with aradius of curvature of greater than or equal to 1 mm and less than orequal to 150 mm.

This embodiment can be combined with any of the other embodiments asappropriate.

Embodiment 5

In this embodiment, examples in which the light-emitting element of oneembodiment of the present invention is used for various lighting devicesare described with reference to FIG. 10 and FIG. 11. With the use of thelight-emitting element of one embodiment of the present invention, ahighly reliable lighting device with high luminous efficiency can bemanufactured.

Fabricating the light-emitting element of one embodiment of the presentinvention over a substrate having flexibility enables an electronicdevice or a lighting device that has a light-emitting region with acurved surface to be obtained.

Furthermore, a light-emitting device in which the light-emitting elementof one embodiment of the present invention is used can also be used forlighting for motor vehicles; for example, such lighting can be providedon a windshield, a ceiling, and the like.

FIG. 10(A) is a perspective view showing one surface of a multifunctionterminal 3500, and FIG. 10(B) is a perspective view showing the othersurface of the multifunction terminal 3500. In a housing 3502 of themultifunction terminal 3500, a display portion 3504, a camera 3506,lighting 3508, and the like are incorporated. The light-emitting deviceof one embodiment of the present invention can be used for the lighting3508.

The lighting 3508 that includes the light-emitting device of oneembodiment of the present invention functions as a planar light source.Thus, unlike a point light source typified by an LED (Light EmittingDiode), the lighting 3508 can provide light emission with lowdirectivity. When the lighting 3508 and the camera 3506 are used incombination, for example, imaging can be performed by the camera 3506with the lighting 3508 lighting or flashing. Because the lighting 3508has a function of a planar light source, a photograph as if taken undernatural light can be taken.

Note that the multifunction terminal 3500 shown in FIGS. 10(A) and 10(B)can have a variety of functions as in the electronic devices shown inFIGS. 9(A) to 9(C).

The housing 3502 can include a speaker, a sensor (a sensor having afunction of measuring force, displacement, position, speed,acceleration, angular velocity, rotational frequency, distance, light,liquid, magnetism, temperature, chemical substance, sound, time,hardness, electric field, current, voltage, power, radiation, flow rate,humidity, gradient, oscillation, odor, or infrared rays), a microphone,and the like. When a sensing device including a sensor for detectinginclination, such as a gyroscope sensor or an acceleration sensor, isprovided inside the multifunction terminal 3500, display on the screenof the display portion 3504 can be automatically switched by determiningthe orientation (horizontal or vertical) of the multifunction terminal3500.

The display portion 3504 can function as an image sensor. For example,an image of a palm print, a fingerprint, or the like is taken by touchon the display portion 3504 with the palm or the finger, wherebypersonal authentication can be performed. Furthermore, with the use of abacklight that emits near-infrared light or a sensing light source thatemits near-infrared light in the display portion 3504, an image of afinger vein, a palm vein, or the like can be taken. Note that thelight-emitting device of one embodiment of the present invention may beused for the display portion 3504.

FIG. 10(C) is a perspective view of a security light 3600. The light3600 includes lighting 3608 on the outside of the housing 3602, and aspeaker 3610 and the like are incorporated in the housing 3602. Thelight-emitting element of one embodiment of the present invention can beused for the lighting 3608.

The light 3600 emits light when the lighting 3608 is gripped or held,for example. An electronic circuit that can control the manner of lightemission from the light 3600 may be provided in the housing 3602. Theelectronic circuit may be a circuit that enables light emission once orintermittently a plurality of times or may be a circuit that can adjustthe amount of emitted light by controlling the current value for lightemission. A circuit with which a loud audible alarm is output from thespeaker 3610 at the same time as light emission from the lighting 3608may be incorporated.

The light 3600 can emit light in various directions; therefore, it ispossible to intimidate a thug or the like with light, or light andsound. Moreover, the light 3600 may include a camera such as a digitalstill camera to have a photography function.

FIG. 11 is an example in which the light-emitting element is used for anindoor lighting device 8501. Note that since the light-emitting elementcan have a larger area, alighting device having a large area can also beformed. In addition, a lighting device 8502 in which a light-emittingregion has a curved surface can also be formed using a housing with acurved surface. The light-emitting element described in this embodimentis in the form of a thin film, and the degree of design freedom of thehousing is high. Therefore, the lighting device can be elaboratelydesigned in a variety of ways. Furthermore, a wall of the room may beprovided with a large-sized lighting device 8503. Touch sensors may beprovided in the lighting devices 8501, 8502, and 8503 to turn the poweron or off.

Moreover, when the light-emitting element is used on the surface side ofa table, a lighting device 8504 that has a function of a table can beobtained. Note that when the light-emitting element is used as part ofanother piece of furniture, a lighting device that has a function of thepiece of furniture can be obtained.

As described above, the lighting devices and the electronic devices canbe obtained with the use of the light-emitting device of one embodimentof the present invention. Note that the light-emitting device can beused for electronic devices in a variety of fields without being limitedto the lighting devices and the electronic devices described in thisembodiment.

The structures described in this embodiment can be used in anappropriate combination with any of the structures described in theother embodiments.

Example 1

In this example, examples of fabricating light-emitting elements, eachof which is one kind of electronic device of one embodiment of thepresent invention, and the characteristics of the light-emittingelements are described. A refractive index of an organic compound usedfor a hole-injection layer and a refractive index of the hole-injectionlayer are also described. FIG. 2(A) shows a cross-sectional view of astructure of each element fabricated in this example. Table 1 shows thedetails of the element structures. The structures and abbreviations ofcompounds used here are shown below.

TABLE 1 Reference Thickness Weight Layer numeral (nm) Material ratioComparative Electrode 102 200 Al — light- Electron-injection 119 1 LiF —emitting layer elements Electron-transport 118 (2) 10 BPhen — 1 to 4layer 118 (1) 20 4,6mCzP2Pm — Light-emitting 130 (2) 204,6mCzP2Pm:PCCP:Ir(pbi-diBuCNp)₃ 0.8:0.2:0.1 layer 130 (1) 204,6mCzP2Pm:PCCP:Ir(pbi-diBuCNp)₃ 0.5:0.5:0.1 Hole-transport 112 20 PCCP— layer Hole-injection 111 x₁ DBT3P-II:MoO₃ 2:0.5   layer Electrode 10170 ITSO — Light- Electrode 102 200 Al — emitting Electron-injection 1191 LiF — elements layer 5 to 8 Electron-transport 118 (2) 10 BPhen —layer 118 (1) 20 4,6mCzP2Pm — Light-emitting 130 (2) 204,6mCzP2Pm:PCCP:Ir(pbi-diBuCNp)₃ 0.8:0.2:0.1 layer 130 (1) 204,6mCzP2Pm:PCCP:Ir(pbi-diBuCNp)₃ 0.5:0.5:0.1 Hole-transport 112 20 PCCP— layer Hole-injection 111 (2) x₂ DBT3P-II:MoO₃ 2:0.5   layer 111 (1) 35dmCBP:MoO₃ 2:0.5   Electrode 101 70 ITSO — Light- Electrode 102 200 Al —emitting Electron-injection 119 1 LiF — elements layer 9 to 12Electron-transport 118 (2) 10 BPhen — layer 118 (1) 20 4,6mCzP2Pm —Light-emitting 130 (2) 20 4,6mCzP2Pm:PCCP:Ir(pbi-diBuCNp)₃ 0.8:0.2:0.1layer 130 (1) 20 4,6mCzP2Pm:PCCP:Ir(pbi-diBuCNp)₃ 0.5:0.5:0.1Hole-transport 112 20 PCCP — layer Hole-injection 111 (2) x₂DBT3P-II:MoO₃ 2:0.5   layer 111 (1) 35 TAPC:MoO₃ 2:0.5   Electrode 10170 ITSO —

TABLE 2 Comparative Comparative Comparative Comparative light-emittinglight-emitting light-emitting light-emitting element 1 element 2 element3 element 4 x₁ 35 40 45 50

TABLE 3 Light- Light- Light- Light- emitting emitting emitting emittingelements elements elements elements 5 and 9 6 and 10 7 and 11 8 and 12x₂ 0 5 10 15

<Measurement of Refractive Index>

The refractive indices of organic compounds used for the hole-injectionlayers 111 of comparative light-emitting elements 1 to 4, light-emittingelements 5 to 8, and light-emitting elements 9 to 12 and the refractiveindices of the hole-injection layers 111 were measured. The refractiveindices were measured at room temperature with a rotating compensatorvariable angle fast spectroscopic ellipsometer (M-2000U) produced by J.A. Woollam. The measurement samples were formed over a quartz substrateby a vacuum evaporation method. Note that n Ordinary and n Extraordinarywere measured to calculate n average.

FIG. 12 shows the measurement results of the refractive indices of thefilms with respect to light with a wavelength of 532 nm. FIG. 12 revealsthat DBT3P-II used for the comparative light-emitting elements 1 to 4has the highest refractive index. It is also revealed that dmCBP usedfor the light-emitting elements 5 to 8 is an organic compound with a lowrefractive index; n Ordinary is lower than or equal to 1.75. It is alsorevealed that TAPC used for the light-emitting elements 9 to 12 is anorganic compound with an extremely low refractive index; n Ordinary islower than or equal to 1.70.

The hole-injection layer 111 is required to have a hole-injectionproperty and thus preferably contains an electron-donating material. Thehole-injection layer 111 of each of the light-emitting elementscontaining, as the electron-donating material, MoO₃ with a highrefractive index presumably has a high refractive index. However, asshown in FIG. 12, the refractive indices of the films of the organiccompounds to which MoO₃ of the hole-injection layer 111 of each of thelight-emitting elements is added are found to be slightly higher thanthe refractive indices of the organic compounds. That is, even when amaterial with a high refractive index is used as the electron-donatingmaterial, the use of an organic compound with a low refractive index forthe hole-injection layer 111 enables the hole-injection layer 111 with alow refractive index to be obtained.

FIG. 12 also shows that the difference between n Ordinary and nExtraordinary in the hole-injection layer 111 of each of thelight-emitting elements is smaller than that in the film of each of theorganic compounds. That is, it is found that the anisotropy of a mixedfilm of an organic compound and MoO₃ that is an electron-acceptingmaterial is lower than that of an organic compound film.

<Fabrication of Light-Emitting Element>

<<Fabrication of Comparative Light-Emitting Elements 1 to 4>>

As the electrode 101, an ITSO film was formed to a thickness of 70 nmover a glass substrate. Note that the electrode area of the electrode101 was set to 4 mm² (2 mm×2 mm). The refractive index (n Ordinary) ofthe ITSO film with respect to light with a wavelength of 532 nm is 2.07.

Next, as the hole-injection layer 111,1,3,5-tri-(4-dibenzothiophenyl)-benzene (abbreviation: DBT3P-II) andMoO₃ were deposited over the electrode 101 by co-evaporation at a weightratio (DBT3P-II:MoO₃) of 2:0.5 to a thickness of xi nm. Note that thevalue xi differs between the light-emitting elements, and Table 2 showsthe value xi in each of the light-emitting elements.

Next, as the hole-transport layer 112, PCCP was deposited over thehole-injection layer 111 by evaporation to a thickness of 20 nm.

As a light-emitting layer 130(1), 4,6mCzP2Pm, PCCP, and Ir(pbi-diBuCNp)₃(a mixture of fac isomer: mer isomer=3:2) were deposited over thehole-transport layer 112 by co-evaporation at a weight ratio(4,6mCzP2Pm:PCCP:Ir(pbi-diBuCNp)₃) of 0.5:0.5:0.1 to a thickness of 20nm, and successively, as a light-emitting layer 130(2), 4,6mCzP2Pm,PCCP, and Ir(pbi-diBuCNp)₃ were deposited by co-evaporation at a weightratio of 0.8:0.2:0.1 to a thickness of 20 nm. Note that in thelight-emitting layer 130(1) and the light-emitting layer 130(2),Ir(pbi-diBuCNp)₃ is a guest material that emits phosphorescence.

Next, as a first electron-transport layer 118(1), 4,6mCzP2Pm wasdeposited over the light-emitting layer 130(2) by co-evaporation to athickness of 20 nm. Subsequently, as a second electron-transport layer118(2), bathophenanthroline (abbreviation: BPhen) was deposited over thefirst electron-transport layer 118(1) by evaporation to a thickness of10 nm.

Next, as the electron-injection layer 119, lithium fluoride (LiF) wasdeposited over the second electron-transport layer 118(2) by evaporationto a thickness of 1 nm.

Next, as the electrode 102, aluminum (Al) was formed over theelectron-injection layer 119 to a thickness of 200 nm.

Next, in a glove box containing a nitrogen atmosphere, the comparativelight-emitting elements 1 to 4 were sealed by fixing a glass substratefor sealing to the glass substrate on which the organic materials wereformed using a sealant for organic EL. Specifically, the sealant wasapplied to the periphery of the organic materials formed on the glasssubstrate, the substrate was bonded to the glass substrate for sealing,irradiation with ultraviolet light having a wavelength of 365 nm at 6J/cm² was performed, and heat treatment at 80° C. for one hour wasperformed. Through the above steps, the comparative light-emittingelements 1 to 4 were obtained.

<<Fabrication of Light-Emitting Elements 5 to 8>>

The light-emitting elements 5 to 8 were formed through the same steps asthe steps of forming the comparative light-emitting elements 1 to 4except for the step of forming the hole-injection layer 111.

As a hole-injection layer 111(1), dmCBP and MoO₃ were deposited over theelectrode 101 by co-evaporation at a weight ratio (dmCBP:MoO₃) of 2:0.5to a thickness of 35 nm, and successively, DBT3P-II and MoO₃ weredeposited by co-evaporation at a weight ratio (DBT3P-II:MoO₃) of 2:0.5to a thickness of x₂ nm. Note that the value x₂ differs between thelight-emitting elements, and Table 3 shows the value x₂ in each of thelight-emitting elements.

<<Fabrication of Light-Emitting Elements 9 to 12>>

The light-emitting elements 9 to 12 were formed through the same stepsas the steps of forming the comparative light-emitting elements 1 to 4except for the step of forming the hole-injection layer 111.

As the hole-injection layer 111(1), TAPC and MoO₃ were deposited overthe electrode 101 by co-evaporation at a weight ratio (TAPC:MoO₃) of2:0.5 to a thickness of 35 nm, and successively, DBT3P-II and MoO₃ weredeposited by co-evaporation at a weight ratio (DBT3P-II:MoO₃) of 2:0.5to a thickness of x₂ nm. Note that the value x₂ differs between thelight-emitting elements, and Table 3 shows the value x₂ in each of thelight-emitting elements.

<Characteristics of Light-Emitting Elements>

Next, the characteristics of the fabricated comparative light-emittingelements 1 to 4 and light-emitting elements 5 to 12 were measured. Aluminance colorimeter (manufactured by TOPCON TECHNOHOUSE CORPORATION,BM-5A) was used for measuring luminance and CIE chromaticity, and amulti-channel spectrometer (manufactured by Hamamatsu Photonics K.K.,PMA-11) was used for measuring electroluminescence spectra. Note thatthe measurements of the light-emitting elements were performed at roomtemperature (in an atmosphere kept at 23° C.).

FIG. 13 shows the current efficiency-luminance characteristics of thecomparative light-emitting element 1, the light-emitting element 5, andthe light-emitting element 9 among the fabricated light-emittingelements. FIG. 14 shows the current density-voltage characteristics.FIG. 15 shows the external quantum efficiency-luminance characteristics.The values of the external quantum efficiency shown in FIG. 15 areobtained when the light-emitting elements are not subjected to theviewing angle correction and are measured from the front direction. Asthe organic compound in the hole-injection layer 111, DBT3P-II was usedin the comparative light-emitting element 1, dmCBP was used in thelight-emitting element 5, and TAPC was used in the light-emittingelement 9, and these elements have the same element structure except forthe hole-injection layer 111.

FIG. 14 shows that the current density-voltage characteristics of thecomparative light-emitting element 1, the light-emitting element 5, andthe light-emitting element 9 are equivalent to each other. Thus, evenwhen an organic compound with a low refractive index is used for thehole-injection layer 111, these elements have excellent hole-injectionproperties.

FIG. 13 and FIG. 15 show that the comparative light-emitting element 1,the light-emitting element 5, and the light-emitting element 9 havecurrent efficiency higher than 100 cd/A and external quantum efficiencyhigher than 30%. The light-emitting element 5 and the light-emittingelement 9 containing dmCBP and TAPC, respectively, that are organiccompounds with low refractive indices in the hole-injection layers 111have higher efficiency than the comparative light-emitting element 1containing DBT3P-II that is a material with a high refractive index.

FIG. 16 shows emission spectra when current at a current density of 25mA/cm² was applied to the comparative light-emitting element 1, thelight-emitting element 5, and the light-emitting element 9. As shown inFIG. 16, the emission spectra of the comparative light-emitting element1, the light-emitting element 5, and the light-emitting element 9 havepeaks at around 515 nm and 550 nm, which are derived from light emissionof a guest material Ir(pbi-diuCNp)₃ contained in the light-emittinglayer 130.

Table 4shows the element characteristics of the comparativelight-emitting elements 1 to 4 and the light-emitting elements 5 to 12at around 1000 cd/m². The external quantum efficiency shown in Table 4is obtained after the viewing angle correction.

TABLE 4 External quantum Current CIE Current Power efficiency (%)Voltage density chromaticity Luminance efficiency efficiency (afterviewing angle (V) (mA/cm²) (x, y) (cd/m²) (cd/A) (lm/w) correction)Comparative 3.00 0.48 (0.308, 0.649) 575 120 125 28.9 light-emittingelement 1 Comparative 3.10 0.79 (0.317, 0.643) 941 119 120 29.9light-emitting element 2 Comparative 3.00 0.51 (0.326, 0.637) 596 116121 30.5 light-emitting element 3 Comparative 3.00 0.54 (0.334, 0.629)600 111 116 30.4 light-emitting element 4 Light-emitting 3.10 0.79(0.309, 0.649) 1004 127 129 30.5 element 5 Light-emitting 3.00 0.50(0.319, 0.642) 615 124 130 31.2 element 6 Light-emitting 3.10 0.80(0.329, 0.634) 938 118 119 31.2 element 7 Light-emitting 3.00 0.51(0.339, 0.627) 575 112 117 31.1 element 8 Light-emitting 3.30 0.70(0.313, 0.646) 898 128 122 31.5 element 9 Light-emitting 3.10 0.80(0.324, 0.639) 986 123 125 31.8 element 10 Light-emitting 3.00 0.52(0.334, 0.631) 613 117 123 31.8 element 11 Light-emitting 3.10 0.80(0.346, 0.622) 863 108 109 31.0 element 12

The above results demonstrate that the comparative light-emittingelements 1 to 4and the light-emitting elements 5 to 12fabricated in thisexample have favorable driving voltage and luminous efficiencyregardless of the structure of the hole-injection layer 111.

<Relation Between Refractive Index of Hole-Injection Layer 111 andExternal Quantum Efficiency>

FIG. 17 shows a relation between chromaticity x and external quantumefficiency with the organic materials used for the hole-injection layers111 with the use of the values of the elements shown in Table 4. In FIG.17, the values of the comparative light-emitting elements 1 to 4 wereused for data on the “DBT3P-II” curve, the values of the light-emittingelements 5 to 8 were used for data on the “dmCBP” curve, and the valuesof the light-emitting elements 9 to 12 were used for data on the “TAPC”curve. Even when the hole-injection layers 111 in the comparativelight-emitting elements 1 to 4 and the light-emitting elements 5 to 12have the same thickness, the refractive indices differ depending on theorganic compounds used therein; thus, the optical path length from thelight-emitting region to the substrate differs between thelight-emitting elements. A change in the optical path length changes theexternal quantum efficiency; thus, the optical path length of each ofthe light-emitting elements needs to be adjusted in examining therelation between the refractive index of the hole-injection layer 111and the external quantum efficiency; however, it is difficult to performminor adjustment on the thickness of the EL layer in formation of thelight-emitting element.

In the case where an optical path length from a light-emitting region toa substrate differs between light-emitting elements formed using thesame light-emitting material, emission spectra and chromaticity obtainedfrom the light-emitting elements are also different from each other. Bycontrast, when the light-emitting elements have the same chromaticity,the emission spectra exhibited by the light-emitting elements areprobably the same. In other words, when the light-emitting elements havethe same chromaticity, the optical path lengths from the light-emittingregions to the substrates in the light-emitting elements can be regardedas the same. Thus, the relation between the refractive index of thehole-injection layer 111 and the external quantum efficiency can beexamined by consideration of the relation between external quantumefficiency and chromaticity x or chromaticity y.

As shown in FIG. 12, the refractive indices of the organic compoundsused for the hole-injection layers 111 are high in the following order:DBT3P-II, dmCBP, and TAPC. FIG. 17 shows that the lower refractive indexof the organic compound used for the hole-injection layer 111 results inhigher external quantum efficiency. This is because light attenuationdue to an evanescent mode is reduced and thus outcoupling efficiency isimproved.

As described above, the use of an organic compound with a low refractiveindex for the hole-injection layer 111 enables a light-emitting elementwith excellent outcoupling efficiency to be obtained while ahole-injection property is maintained.

<Relation Between Volume Ratio of Electron-Accepting Substance toElectron-Donating Substance in Hole-Injection Layer 111 and ExternalQuantum Efficiency>

Here, the relation between the volume ratio of an electron-acceptingsubstance (MoO₃) to an electron-donating substance (hereinafter,referred to as the volume ratio of MoO₃) in the hole-injection layer 111and external quantum efficiency was examined. Table 5 shows the detailsof the element structures. The structures and abbreviations of compoundsused here are shown below. Note that refer to the compounds describedabove for other organic compounds.

TABLE 5 Reference Thickness Weight Layer numeral (nm) Material ratioLight- Electrode 102 200 Al — emitting Electron- 119 1 LiF — elementsinjection layer 13 to 18 Electron- 118 (2) 10 BPhen — transport layer118 (1) 20 4,6mCzP2Pm — Light-emitting 130 (2) 204,6mCzP2Pm:PCCP:Ir(tBuppm)₃ 0.8:0.2:0.075 layer 130 (1) 204,6mCzP2Pm:PCCP:Ir(tBuppm)₃ 0.5:0.5:0.075 Hole-transport 112 20 PCCP —layer Hole-injection 111 40 DBT3P-II:MoO₃ 3-y:y      layer Electrode 10170 ITSO —

TABLE 6 Light- Light- Light- Light- Light- Light- emitting emittingemitting emitting emitting emitting element 13 element 14 element 15element 16 element 17 element 18 y 0.25 0.5 1.0 1.5 2 2.5 Volume ratioof 0.02 0.05 0.1 0.29 0.33 0.56 MoO₃

<<Fabrication of Light-Emitting Elements 13 to 18>>

The light-emitting elements 13 to 18 were formed through the same stepsas the steps of forming the comparative light-emitting elements 1 to 4except for the steps of forming the hole-injection layer 111 and thelight-emitting layer 130.

As the hole-injection layer 111, DBT3P-II and MoO₃ were deposited overthe electrode 101 by co-evaporation at a weight ratio (DBT3P-II:MoO₃) of3-y:y to a thickness of 40 nm. Note that the value y differs between thelight-emitting elements, and Table 6 shows the value y in each of thelight-emitting elements. Table 6 also shows the results of convertingthe weight ratio into the volume ratio of MoO₃.

Next, as the light-emitting layer 130(1), 4,6mCzP2Pm, PCCP, andIr(tBuppm)₃ were deposited over the hole-transport layer 112 byco-evaporation at a weight ratio (4,6mCzP2Pm:PCCP:Ir(tBuppm)₃) of0.5:0.5:0.075 to a thickness of 20 nm, and successively, as thelight-emitting layer 130(2), 4,6mCzP2Pm, PCCP, and Ir(tBuppm)₃ weredeposited by co-evaporation at a weight ratio of 0.8:0.2:0.075 to athickness of 20 nm. Note that in the light-emitting layer 130(1) and thelight-emitting layer 130(2), Ir(tBuppm)₃ is a guest material that emitsphosphorescence.

<Characteristics of Light-Emitting Elements>

Next, the luminance-external quantum efficiency characteristics of thefabricated light-emitting elements 13 to 18 were measured. Themeasurement was performed by the above-described method.

FIG. 18 shows the relation between external quantum efficiency at around10000 cd/m² and the volume ratio of MoO₃ in the hole-injection layer 111in each of the elements. FIG. 18 reveals that the external quantumefficiency is as high as 24% to 26% in a region where the volume ratioof MoO₃ to the electron-donating substance is greater than 0 and lessthan or equal to 0.3, whereas the efficiency decreases in a region wherethe volume ratio is greater than 0.3. This is probably because theoutcoupling efficiency decreases due to the refractive index of thehole-injection layer 111 that is increased by the influence of theelectron-accepting substance (MoO₃) with a high refractive index in theregion where the volume ratio of MoO₃ is greater than 0.3. On the otherhand, it is probable that the outcoupling efficiency is excellent in theregion where the volume ratio of MoO₃ is greater than 0 and less than orequal to 0.3 because the refractive index of the hole-injection layer111 is less affected by the electron-accepting substance (MoO₃) with ahigh refractive index and largely affected by the refractive index ofthe electron-donating substance having a lower refractive index than theelectron-accepting substance (MoO₃). That is, with the use of thehole-injection layer 111 in which the volume ratio of MoO₃ is greaterthan 0 and less than or equal to 0.3, a light-emitting element withexcellent outcoupling efficiency can be fabricated.

Example 2

In this example, examples of fabricating light-emitting elements, eachof which is the electronic device of one embodiment of the presentinvention and different from those in Example 1, and the characteristicsof the light-emitting elements are described. A refractive index of anorganic compound used for the hole-injection layer 111 and a refractiveindex of the hole-injection layer are also described. Table 7 shows thedetails of the element structures. The structures and abbreviations ofcompounds used here are shown below. Refer to Example 1 above for otherorganic compounds.

TABLE 7 Reference Thickness Weight Layer numeral (nm) Material ratioComparative Electrode 102 200 Al — light Electron- 119 1 LiF — emittinginjection layer elements Electron- 118 (2) 10 BPhen — 19 to 22 transportlayer 118 (1) 20 4,6mCzP2Pm — Light-emitting 130 (2) 204,6mCzP2Pm:PCCP:Ir(ppy)₃ 0.8:0.2:0.1 layer 130 (1) 204,6mCzP2Pm:PCCP:Ir(ppy)₃ 0.5:0.5:0.1 Hole-transport 112 20 PCCP — layerHole-injection 111 z₁ DBT3P-II:MoO₃ 2:0.5   layer Electrode 101 70 ITSO— Light- Electrode 102 200 Al — emitting Electron- 119 1 LiF — elementsinjection layer 23 to 26 Electron- 118 (2) 10 BPhen — transport layer118 (1) 20 4,6mCzP2Pm — Light-emitting 130 (2) 204,6mCzP2Pm:PCCP:Ir(ppy)₃ 0.8:0.2:0.1 layer 130 (1) 204,6mCzP2Pm:PCCP:Ir(ppy)₃ 0.5:0.5:0.1 Hole-transport 112 20 PCCP — layerHole-injection 111 (2) z₂ DBT3P-II:MoO₃ 2:0.5   layer 111 (1) 35mCzFLP:MoO₃ 2:0.5   Electrode 101 70 ITSO — Light- Electrode 102 200 Al— emitting Electron- 119 1 LiF — elements injection layer 27 to 30Electron- 118 (2) 10 BPhen — transport layer 118 (1) 20 4,6mCzP2Pm —Light-emitting 130 (2) 20 4,6mCzP2Pm:PCCP:Ir(ppy)₃ 0.8:0.2:0.1 layer 130(1) 20 4,6mCzP2Pm:PCCP:Ir(ppy)₃ 0.5:0.5:0.1 Hole-transport 112 20 PCCP —layer Hole-injection 111 (2) z₂ DBT3P-II:MoO₃ 2:0.5   layer 111 (1) 35FLP2A:MoO₃ 2:0.5   Electrode 101 70 ITSO —

TABLE 8 Comparative Comparative Comparative Comparative light- light-light- light- emitting emitting emitting emitting element 19 element 20element 21 element 22 z₁ 35 40 45 50

TABLE 9 Light- Light- Light- Light- emitting emitting emitting emittingelements elements elements elements 23 and 27 24 and 28 25 and 29 26 and30 z₂ 0 5 10 15

<Measurement of Refractive Index>

The refractive indices of organic compounds used for the hole-injectionlayers 111 of comparative light-emitting elements 19 to 22,light-emitting elements 23 to 26, and light-emitting elements 27 to 30were measured. The measurement of the refractive indices was performedin a manner similar to that described in Example 1.

FIG. 19 shows the measurement results of the refractive indices of thefilms with respect to light with a wavelength of 532 nm. FIG. 19 revealsthat DBT3P-II used for the comparative light-emitting elements 19 to 22has the highest refractive index. It is also revealed that9-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]-9H-carbazole (abbreviation:mCzFLP) used for the light-emitting elements 23 to 26 is an organiccompound with a low refractive index; n Ordinary is lower than or equalto 1.75. It is also revealed that4,4′-[bis(9-phenylfluoren-9-yl)]-triphenylamine (abbreviation: FLP2A)used for the light-emitting elements 27 to 30 is an organic compoundwith a low refractive index; n Ordinary is lower than or equal to 1.75.

It is presumed from the results in Example 1 that a mixed film of MoO₃and mCzFLP or FLP2A, which is the hole-injection layer 111 of each ofthe light-emitting elements 23 to 30, has approximately the samerefractive index as the respective organic compounds, and has a lowerrefractive index than a mixed film of MoO₃ and DBT3P-II, which is thehole-injection layer 111 of each of the comparative light-emittingelements 19 to 22.

<Fabrication of Light-Emitting Elements> <<Fabrication of ComparativeLight-Emitting Elements 19 to 22>>

The comparative light-emitting elements 19 to 22 were formed through thesame steps as the steps of forming the comparative light-emittingelements 1 to 4 except for the steps of forming the hole-injection layer111 and the light-emitting layer 130.

As the hole-injection layer 111, DBT3P-II and MoO₃ were deposited overthe electrode 101 by co-evaporation at a weight ratio (DBT3P-II:MoO₃) of2:0.5 to a thickness of z₁ nm. Note that the value z₁ differs betweenthe light-emitting elements, and Table 8 shows the value z₁ in each ofthe light-emitting elements.

As the light-emitting layer 130(1), 4,6mCzP2Pm, PCCP, and Ir(ppy)₃ weredeposited over the hole-transport layer 112 by co-evaporation at aweight ratio (4,6mCzP2Pm:PCCP:Ir(ppy)₃) of 0.5:0.5:0.1 to a thickness of20 nm, and successively, as the light-emitting layer 130(2), 4,6mCzP2Pm,PCCP, and Ir(ppy)₃ were deposited by co-evaporation at a weight ratio of0.8:0.2:0.1 to a thickness of 20 nm. Note that in the light-emittinglayer 130(1) and the light-emitting layer 130(2), Ir(ppy)₃ is a guestmaterial that emits phosphorescence.

<<Fabrication of Light-Emitting Elements 23 to 26>>

The light-emitting elements 23 to 26 were formed through the same stepsas the steps of forming the comparative light-emitting elements 19 to 22except for the step of forming the hole-injection layer 111.

As the hole-injection layer 111(1), mCzFLP and MoO₃ were deposited overthe electrode 101 by co-evaporation at a weight ratio (mCzFLP:MoO₃) of2:0.5 to a thickness of 35 nm, and successively, DBT3P-II and MoO₃ weredeposited by co-evaporation at a weight ratio (DBT3P-II:MoO₃) of 2:0.5to a thickness of z₂ nm. Note that the value z₂ differs between thelight-emitting elements, and Table 9 shows the value z₂ in each of thelight-emitting elements.

<<Fabrication of Light-Emitting Elements 27 to 30>>

The light-emitting elements 27 to 30 were formed through the same stepsas the steps of forming the comparative light-emitting elements 19 to 22except for the step of forming the hole-injection layer 111.

As the hole-injection layer 111(1), FLP2A and MoO₃ were deposited overthe electrode 101 by co-evaporation at a weight ratio (FLP2A:MoO₃) of2:0.5 to a thickness of 35 nm, and successively, DBT3P-II and MoO₃ weredeposited by co-evaporation at a weight ratio (DBT3P-II:MoO₃) of 2:0.5to a thickness of z₂ nm. Note that the value z₂ differs between thelight-emitting elements, and Table 9 shows the value z₂ in each of thelight-emitting elements.

<Characteristics of Light-Emitting Elements>

Next, the characteristics of the fabricated comparative light-emittingelements 19 to 22 and light-emitting elements 23 to 30 were measured.The measurement was performed in a manner similar to that in Example 1.

FIG. 20 shows the current efficiency-luminance characteristics of thecomparative light-emitting element 19, the light-emitting element 23,and the light-emitting element 27 among the fabricated light-emittingelements. FIG. 21 shows the current density-voltage characteristics.FIG. 22 shows the external quantum efficiency-luminance characteristics.The values of the external quantum efficiency shown in FIG. 22 areobtained when the light-emitting elements are not subjected to theviewing angle correction and are measured from the front direction. Asthe organic compound in the hole-injection layer 111, DBT3P-II was usedin the comparative light-emitting element 19, mCzFLP was used in thelight-emitting element 23, and FLP2A was used in the light-emittingelement 27, and these elements have the same element structure exceptfor the hole-injection layer 111.

FIG. 21 shows that the current density-voltage characteristics of thecomparative light-emitting element 19, the light-emitting element 23,and the light-emitting element 27 are equivalent to each other. Thus,even when an organic compound with a low refractive index is used forthe hole-injection layer 111, these elements have excellenthole-injection properties as in Example 1.

FIG. 20 and FIG. 22 show that the comparative light-emitting element 19,the light-emitting element 23, and the light-emitting element 27 eachhave a high current efficiency of approximately 100 cd/A and externalquantum efficiency higher than 25%. The light-emitting element 23 andthe light-emitting element 27 containing mCzFLP and FLP2A, respectively,that are organic compounds with low refractive indices in thehole-injection layers 111 have higher efficiency than the comparativelight-emitting element 19 containing DBT3P-II that is a material with ahigh refractive index.

FIG. 23 shows emission spectra when current at a current density of 25mA/cm² was applied to the comparative light-emitting element 19, thelight-emitting element 23, and the light-emitting element 27. As shownin FIG. 23, the emission spectra of the comparative light-emittingelement 19, the light-emitting element 23, and the light-emittingelement 27 have peaks at around 518 nm, which are derived from lightemission of a guest material Ir(ppy)₃ contained in the light-emittinglayer 130.

Table 10 shows the element characteristics of the comparativelight-emitting elements 19 to 22and the light-emitting elements 23 to 30at around 1000 cd/m².

TABLE 10 External quantum Current CIE Current Power efficiency (%)Voltage density chromaticity Luminance efficiency efficiency (afterviewing angle (V) (mA/cm²) (x, y) (cd/m²) (cd/A) (lm/W) correction)Comparative 3.10 0.74 (0.310, 0.637) 727 97.9 99.2 24.8 light-emittingelement 19 Comparative 3.20 1.10 (0.316, 0.634) 1050 95.9 94.1 25.1light-emitting element 20 Comparative 3.20 1.10 (0.324, 0.628) 1016 92.490.7 25.0 light-emitting element 21 Comparative 3.20 1.09 (0.333, 0.622)961 87.9 86.3 24.9 light-emitting element 22 Light-emitting 3.00 0.53(0.313, 0.636) 538 102 107 25.6 element 23 Light-emitting 3.20 1.09(0.320, 0.632) 1081 98.8 97.0 26.1 element 24 Light-emitting 3.20 1.08(0.331, 0.624) 1001 92.8 91.1 25.4 element 25 Light-emitting 3.20 1.09(0.339, 0.618) 953 87.2 85.6 25.0 element 26 Light-emitting 3.10 0.73(0.315, 0.635) 742 101 103 25.8 element 27 Light-emitting 3.20 1.00(0.323, 0.631) 981 97.8 96.0 26.0 element 28 Light-emitting 3.20 0.98(0.332, 0.624) 902 92.4 90.7 25.8 element 29 Light-emitting 3.20 1.01(0.340, 0.617) 876 86.8 85.2 25.3 element 30

The above results demonstrate that the comparative light-emittingelements 19 to 22and the light-emitting elements 23 to 30fabricated inthis example have favorable driving voltage and luminous efficiencyregardless of the structure of the hole-injection layer 111.

<Relation Between Refractive Index of Hole-Injection Layer 111 andExternal Quantum Efficiency>

FIG. 24 shows a relation between chromaticity x and external quantumefficiency with the organic materials used for the hole-injection layers111 with the use of the values of the elements shown in Table 10. InFIG. 24, the values of the comparative light-emitting elements 19 to 22were used for data on the “DBT3P-II” curve, the values of thelight-emitting elements 23 to 26 were used for data on the “mCzFLP”curve, and the values of the light-emitting elements 27 to 30 were usedfor data on the “FLP2A” curve.

As shown in FIG. 19, the refractive indices of the organic compoundsused for the hole-injection layers 111 are high in the following order:DBT3P-II, mCzFLP, and FLP2A. FIG. 24 shows that the lower refractiveindex of the organic compound used for the hole-injection layer 111results in higher external quantum efficiency as in Example 1. This isbecause light attenuation due to an evanescent mode is reduced and thusoutcoupling efficiency is improved.

As described above, the use of an organic compound with a low refractiveindex for the hole-injection layer 111 enables a light-emitting elementwith excellent outcoupling efficiency to be obtained while ahole-injection property is maintained.

Example 3

In this example, examples of fabricating light-emitting elements, eachof which is one kind of electronic device of one embodiment of thepresent invention, and the characteristics of the light-emittingelements are described. A refractive index of an organic compound usedfor a hole-injection layer and a refractive index of the hole-injectionlayer are also described. FIG. 2(A) shows a cross-sectional view of astructure of each element fabricated in this example. Tables 11 to 14show the details of the element structures. Refer to the aboveembodiments and examples for the structures and abbreviations ofcompounds used here.

TABLE 11 Reference Thickness Weight Layer numeral (nm) Material ratioComparative Electrode 102 200 Al — light- Electron- 119 1 LiF — emittinginjection layer elements Electron- 118 (2) 10 BPhen — 31 to 34 transportlayer 118 (1) 20 4,6mCzP2Pm — Light- 130 (2) 20 4,6mCzP2Pm:PCCP:Ir(ppy)₃0.8:0.2:0.1 emitting 130 (1) 20 4,6mCzP2Pm:PCCP:Ir(ppy)₃ 0.5:0.5:0.1layer Hole-transport 112 20 PCCP — layer Hole-injection 111 x₃DBT3P-II:MoO₃ 2:0.5   layer Electrode 101 70 ITSO — Light- Electrode 102200 Al — emitting Electron- 119 1 LiF — elements injection layer 35 to38 Electron- 118 (2) 10 — — transport 118 (1) 20 4,6mCzP2Pm — layerLight-emitting 130 (2) 20 4,6mCzP2Pm:PCCP:Ir(ppy)₃ 0.8:0.2:0.1 layer 130(1) 20 4,6mCzP2Pm:PCCP:Ir(ppy)₃ 0.5:0.5:0.1 Hole-transport 112 20 PCCP —layer Hole-injection 111 (2) x₄ DBT3P-II:MoO₃ 2:0.5   layer 111 (1) 35CzC:MoO₃ 2:0.5   Electrode 101 70 ITSO — Light- Electrode 102 200 Al —emitting Electron- 119 1 LiF — elements injection layer 39 to 42Electron- 118 (2) 10 BPhen — transport layer 118 (1) 20 4,6mCzP2Pm —Light-emitting 130 (2) 20 4,6mCzP2Pm:PCCP:Ir(ppy)₃ 0.8:0.2:0.1 layer 130(1) 20 4,6mCzP2Pm:PCCP:Ir(ppy)₃ 0.5:0.5:0.1 Hole-transport 112 20 PCCP —layer Hole-injection 111 (2) x₄ DBT3P-II:MoO₃ 2:0.5   layer 111 (1) 35CzSi:MoO₃ 2:0.5   Electrode 101 70 ITSO —

TABLE 12 Reference Thickness Weight Layer numeral (nm) Material ratioLight- Electrode 102 200 Al — emitting Electron- 119 1 LiF — elementsinjection layer 43 to 46 Electron- 118 (2) 10 BPhen — transport layer118 (1) 20 4,6mCzP2Pm — Light-emitting 130 (2) 204,6mCzP2Pm:PCCP:Ir(ppy)₃ 0.8:0.2:0.1 layer 130 (1) 204,6mCzP2Pm:PCCP:Ir(ppy)₃ 0.5:0.5:0.1 Hole-transport 112 20 PCCP — layerHole-injection 111 (2) x₄ DBT3P-II:MoO₃ 2:0.5 layer 111 (1) 35FATPA:MoO₃ 2:0.5 Electrode 101 70 ITSO — Comparative Electrode 102 200Al — light- Electron- 119 1 LiF — emitting injection layer elementsElectron- 118 (2) 10 BPhen — 47 to 50 transport layer 118 (1) 204,6mCzP2Pm — Light-emitting 130 (2) 20 4,6mCzP2Pm:PCCP:Ir(ppy)₃0.8:0.2:0.1 layer 130 (1) 20 4,6mCzP2Pm:PCCP:Ir(ppy)₃ 0.5:0.5:0.1Hole-transport 112 20 PCCP — layer Hole-injection 111 (2) x₄DBT3P-II:MoO₃ 2:0.5 layer 111 (1) 35 UGH-2:MoO₃ 2:0.5 Electrode 101 70ITSO —

TABLE 13 Comparative Comparative Comparative Comparative light- light-light- light- emitting emitting emitting emitting element 31 element 32element 33 element 34 x₃ 35 40 45 50

TABLE 14 Light-emitting Light-emitting Light-emitting Light-emittingelements elements elements elements 35, 39, and 36, 40, and 37, 41, and38, 42, and 43 and 44 and 45 and 46 and comparative comparativecomparative comparative light- light- light- light- emitting emittingemitting emitting element 47 element 48 element 49 element 50 x₄ 0 5 1015

<Measurement of Refractive Index>

The refractive indices of organic compounds used for the hole-injectionlayers 111 of comparative light-emitting elements 31 to 34,light-emitting elements 35 to 38, light-emitting elements 39 to 42,light-emitting elements 43 to 46, and comparative light-emittingelements 47 to 50 and the refractive indices of the hole-injectionlayers 111 used in the comparative light-emitting elements 31 to 34, thelight-emitting elements 35 to 38, the light-emitting elements 39 to 42,the light-emitting elements 43 to 46, and the comparative light-emittingelements 47 to 50 were measured. The measurement of the refractiveindices was performed in a manner similar to that described in Example1.

FIG. 25 shows the measurement results of the refractive indices of thefilms with respect to light with a wavelength of 532 nm. FIG. 25 revealsthat DBT3P-II used for the comparative light-emitting elements 31 to 34has the highest refractive index. It is also revealed that CzC used forthe light-emitting elements 35 to 38, CzSi used for the light-emittingelements 39 to 42, FATPA used for the light-emitting elements 43 to 46,and 1,4-di(triphenylsilyl)benzene (abbreviation: UGH-2) used for thecomparative light-emitting elements 47 to 50 are each an organiccompound with an extremely low refractive index; n Ordinary is lowerthan or equal to 1.70.

The hole-injection layer 111 is required to have a hole-injectionproperty and thus preferably contains an electron-donating material. Thehole-injection layer 111 of each of the light-emitting elementscontaining, as the electron-donating material, MoO₃ with a highrefractive index presumably has a high refractive index. However, asshown in FIG. 25, the refractive indices of the films of the organiccompounds to which MoO₃ of the hole-injection layer 111 of each of thelight-emitting elements is added are found to be slightly higher thanthe refractive indices of the organic compounds. That is, even when amaterial with a high refractive index is mixed into the material havingan electron-donating property, the use of a material with a lowrefractive index and an electron-donating property for thehole-injection layer 111 enables the hole-injection layer 111 with a lowrefractive index to be obtained.

FIG. 25 also shows that the difference between n Ordinary and nExtraordinary in the hole-injection layer 111 of each of thelight-emitting elements is smaller than that in the film of each of theorganic compounds. That is, it is found that the anisotropy of a mixedfilm of an organic compound and MoO₃ that is an electron-donatingmaterial is lower than that of an organic compound film.

It is presumed that a mixed film of MoO₃ and CzSi, which is the organiccompound used for the hole-injection layers 111 of the light-emittingelements 39 to 42, and a mixed film of MoO₃ and UGH-2, which is theorganic compound used for the hole-injection layers 111 of thecomparative light-emitting elements 47 to 50, have approximately thesame refractive indices as the respective organic compounds, and havelower refractive indices than a mixed film of MoO₃ and DBT3P-II, whichis the hole-injection layer 111 of each of the comparativelight-emitting elements 1 to 4.

<Fabrication of Light-Emitting Elements> <<Fabrication of ComparativeLight-Emitting Elements 31 to 34>>

As the electrode 101, an ITSO film was formed to a thickness of 70 nmover a glass substrate. Note that the electrode area of the electrode101 was set to 4 mm² (2 mm×2 mm).

Next, as the hole-injection layer 111,1,3,5-tri-(4-dibenzothiophenyl)-benzene (abbreviation: DBT3P-II) andMoO₃ were deposited over the electrode 101 by co-evaporation at a weightratio (DBT3P-II:MoO₃) of 2:0.5 to a thickness of x₃ nm. Note that thevalue x₃ differs between the light-emitting elements, and Table 13 showsthe value x₃ in each of the light-emitting elements.

Next, as the hole-transport layer 112, PCCP was deposited over thehole-injection layer 111 by evaporation to a thickness of 20 nm.

Next, as the light-emitting layer 130(1), 4,6mCzP2Pm, PCCP, and Ir(ppy)₃were deposited over the hole-transport layer 112 by co-evaporation at aweight ratio (4,6mCzP2Pm:PCCP: Ir(ppy)₃) of 0.5:0.5:0.1 to a thicknessof 20 nm, and successively, as the light-emitting layer 130(2),4,6mCzP2Pm, PCCP, and Ir(ppy)₃ were deposited by co-evaporation at aweight ratio of 0.8:0.2:0.1 to a thickness of 20 nm. Note that in thelight-emitting layer 130(1) and the light-emitting layer 130(2),Ir(ppy)₃ is a guest material that emits phosphorescence.

Next, as the first electron-transport layer 118(1), 4,6mCzP2Pm wasdeposited over the light-emitting layer 130(2) by co-evaporation to athickness of 20 nm. Subsequently, as the second electron-transport layer118(2), bathophenanthroline (abbreviation: BPhen) was deposited over thefirst electron-transport layer 118(1) by evaporation to a thickness of10 nm.

Next, as the electron-injection layer 119, lithium fluoride (LiF) wasdeposited over the second electron-transport layer 118(2) by evaporationto a thickness of 1 nm.

Next, as the electrode 102, aluminum (Al) was formed over theelectron-injection layer 119 to a thickness of 200 nm.

Next, in a glove box containing a nitrogen atmosphere, the comparativelight-emitting elements 31 to 34 were sealed by fixing a glass substratefor sealing to the glass substrate on which the organic materials wereformed using a sealant for organic EL. Specifically, the sealant wasapplied to the periphery of the organic materials formed on the glasssubstrate, the substrate was bonded to the glass substrate for sealing,irradiation with ultraviolet light having a wavelength of 365 nm at 6J/cm² was performed, and heat treatment at 80° C. for one hour wasperformed. Through the above steps, the comparative light-emittingelements 31 to 34 were obtained.

<<Fabrication of Light-Emitting Elements 35 to 46 and ComparativeLight-Emitting Elements 47 to 50>>

The light-emitting elements 35 to 46 and the comparative light-emittingelements 47 to 50 were formed through the same steps as the steps offorming the comparative light-emitting elements 31 to 34 except for thestep of forming the hole-injection layer 111. The details of the elementstructures are shown in Tables 11 to 14; thus, the details of thefabrication methods are omitted.

<Characteristics of Light-Emitting Elements>

Next, the characteristics of the fabricated comparative light-emittingelements 31 to 34, light-emitting elements 35 to 46, and comparativelight-emitting elements 47 to 50 were measured. The measurement wasperformed in a manner similar to that in Example 1.

FIG. 26 shows the current efficiency-luminance characteristics of thecomparative light-emitting element 31, the light-emitting element 35,the light-emitting element 39, the light-emitting element 43, and thecomparative light-emitting element 47 among the fabricatedlight-emitting elements. FIG. 27 shows the current density-voltagecharacteristics. FIG. 28 shows the external quantum efficiency-luminancecharacteristics. The values of the external quantum efficiency shown inFIG. 28 are obtained when the light-emitting elements are not subjectedto the viewing angle correction and are measured from the frontdirection. As the organic compound in the hole-injection layer 111,DBT3P-II was used in the comparative light-emitting element 31, CzC wasused in the light-emitting element 35, CzSi was used in thelight-emitting element 39, FATPA was used in the light-emitting element43, and UGH-2 was used in the comparative light-emitting element 47, andthese elements have the same element structure except for thehole-injection layer 111.

FIG. 26 and FIG. 28 show that the comparative light-emitting element 31,the light-emitting element 35, the light-emitting element 39, thelight-emitting element 43, and the comparative light-emitting element 47have current efficiency higher than 90 cd/A and external quantumefficiency higher than 25%. The light-emitting element 35, thelight-emitting element 39, the light-emitting element 43, and thecomparative light-emitting element 47 that contain organic compoundswith low refractive indices in the hole-injection layers 111 have higherefficiency than the comparative light-emitting element 31 containingDBT3P-II that is a material with a high refractive index. This suggeststhat the use of an organic compound with a low refractive index for thehole-injection layer 111 inhibits light attenuation due to an evanescentwave.

FIG. 27 shows that the current density-voltage characteristics of thecomparative light-emitting element 31, the light-emitting element 35,the light-emitting element 39, and the light-emitting element 43 areexcellent and equivalent to each other. On the other hand, the currentdensity-voltage characteristics of the comparative light-emittingelement 47 degrade as compared with those of the comparativelight-emitting element 31, the light-emitting element 35, thelight-emitting element 39, and the light-emitting element 43, whichdemonstrates that the comparative light-emitting element 47 has a lowhole-injection property. This is because UGH-2 does not have anelectron-donating group in its molecule. Thus, an electron-donatinggroup in a molecule enables formation of the hole-injection layer 111having an excellent hole-injection property even when a material with alow refractive index is used for the hole-injection layer 111.

FIG. 29 shows emission spectra when current at a current density of 25mA/cm² was applied to the comparative light-emitting element 31, thelight-emitting element 35, the light-emitting element 39, thelight-emitting element 43, and the comparative light-emitting element47. As shown in FIG. 29, the emission spectra of the comparativelight-emitting element 31, the light-emitting element 35, thelight-emitting element 39, the light-emitting element 43, and thecomparative light-emitting element 47 have peaks at around 518 nm, whichare derived from light emission of a guest material Ir(ppy)₃ containedin the light-emitting layer 130.

Table 15 shows the element characteristics of the comparativelight-emitting elements 31 to 34, the light-emitting elements 35 to 46,and the comparative light-emitting elements 47 to 50 at around 1000cd/m². The external quantum efficiency shown in Table 15 is obtainedafter the viewing angle correction.

TABLE 15 External quantum Current CIE Current Power efficiency (%)Voltage density chromaticity Luminance efficiency efficiency (afterviewing (V) (mA/cm²) (x, y) (cd/m²) (cd/A) (lm/W) angle correction)Comparative 3.10 0.84 (0.305, 0.639) 821 97.6 98.9 23.5 light-emittingelement 31 Comparative 3.20 1.20 (0.310, 0.640) 1174 97.9 96.1 24.4light-emitting element 32 Comparative 3.20 1.21 (0.318, 0.635) 1154 95.193.3 24.5 light-emitting element 33 Comparative 3.10 0.81 (0.330, 0.624)736 91.1 92.3 24.4 light-emitting element 34 Light-emitting 3.00 0.54(0.303, 0.641) 575 106 112 25.1 element 35 Light-emitting 3.00 0.51(0.312, 0.637) 531 105 110 25.7 element 36 Light-emitting 3.20 1.18(0.320, 0.635) 1193 101 99.3 26.0 element 37 Light-emitting 3.10 0.80(0.333, 0.623) 764 95.1 96.4 25.7 element 38 Light-emitting 3.20 1.09(0.321, 0.633) 1147 106 104 27.5 element 39 Light-emitting 3.20 1.02(0.334, 0.623) 1004 98.2 96.4 27.0 element 40 Light-emitting 3.20 1.02(0.343, 0.616) 923 90.6 88.9 26.2 element 41 Light-emitting 3.20 1.02(0.351, 0.609) 847 83.2 81.7 25.3 element 42 Light-emitting 3.00 0.53(0.306, 0.640) 561 106 111 25.6 element 43 Light-emitting 3.00 0.51(0.317, 0.634) 525 103 108 26.0 element 44 Light-emitting 3.20 1.20(0.321, 0.633) 1193 99.3 97.5 25.9 element 45 Light-emitting 3.10 0.81(0.337, 0.620) 742 92.1 93.4 25.5 element 46 Comparative 3.60 0.77(0.316, 0.634) 841 109 95.5 27.8 light-emitting element 47 Comparative3.80 0.83 (0.324, 0.629) 873 105 86.9 27.9 light-emitting element 48Comparative 3.80 0.77 (0.333, 0.623) 777 101 83.8 28.1 light-emittingelement 49 Comparative 3.80 0.84 (0.342, 0.616) 803 95.5 78.9 27.7light-emitting element 50

The above results demonstrate that the comparative light-emittingelements 31 to 34, the light-emitting elements 35 to 46, and thecomparative light-emitting elements 47 to 50 fabricated in this examplehave favorable driving voltage and luminous efficiency regardless of thestructure of the hole-injection layer 111.

<Reliability of Light-Emitting Elements>

Next, driving tests at a constant current of 2 mA were performed on thecomparative light-emitting element 31, the light-emitting element 35,the light-emitting element 39, the light-emitting element 43, and thecomparative light-emitting element 47. FIG. 30 shows the results. FIG.30 indicates that the reliability of the comparative light-emittingelement 31, the light-emitting element 35, the light-emitting element39, and the light-emitting element 43 is higher than the reliability ofthe comparative light-emitting element 47. The reliability of thelight-emitting element 43 is particularly high. As described above, thisis probably because the organic compounds used for the hole-injectionlayers 111 of the comparative light-emitting element 31, thelight-emitting element 35, the light-emitting element 39, and thelight-emitting element 43 have electron-donating groups in theirmolecules and thus have higher hole-injection properties than UGH-2 usedfor the comparative light-emitting element 47. Thus, it is found that ahigher hole-injection property of the hole-injection layer 111 resultsin higher reliability of a light-emitting element. Note that in FIG. 30,the reliability test results of the comparative light-emitting element31, the light-emitting element 35, and the light-emitting element 39overlap with each other.

<Relation Between Refractive Index of Hole-Injection Layer 111 andExternal Quantum Efficiency>

FIG. 31 shows a relation between chromaticity x and external quantumefficiency with the organic materials used for the hole-injection layers111 with the use of the values of the elements shown in Table 15. InFIG. 31, the values of the comparative light-emitting elements 31 to 34were used for data on the “DBT3P-II” curve, the values of thelight-emitting elements 35 to 38 were used for data on the “CzC” curve,the values of the light-emitting elements 39 to 42 were used for data onthe “CzSi” curve, the values of the light-emitting elements 43 to 46were used for data on the “FATPA” curve, and the values of thecomparative light-emitting elements 47 to 50 were used for data on the“UGH-2” curve.

As shown in FIG. 25, DBT3P-II, which is an organic compound used for thehole-injection layer 111, has a refractive index higher than 1.80,whereas CzC, CzSi, FATPA, and UGH-2 are organic compounds withrefractive indices lower than or equal to 1.70. FIG. 31 indicates thatthe light-emitting element using an organic compound with a lowrefractive index for the hole-injection layer 111 has higher externalquantum efficiency than the light-emitting element using DBT3P-II forthe hole-injection layer 111. This is because light attenuation due toan evanescent mode is reduced and thus outcoupling efficiency isimproved.

As described above, with the use of an organic compound including anelectron-donating group and one of the tetraarylmethane skeleton and thetetraarylsilane skeleton for the hole-injection layer 111, alight-emitting element having excellent outcoupling efficiency andexcellent reliability can be obtained while maintaining itshole-injection characteristics.

Example 4

In this example, examples of fabricating light-emitting elements, eachof which is one kind of electronic device of one embodiment of thepresent invention, and the characteristics of the light-emittingelements are described. A refractive index of an organic compound usedfor a hole-injection layer and a refractive index of the hole-injectionlayer are also described. FIG. 2(A) shows a cross-sectional view of astructure of each element fabricated in this example. Table 16 and Table17 show the details of the element structures. The structures andabbreviations of compounds used here are shown below. Refer to the aboveexamples and embodiments for other organic compounds. Note that in eachof the light-emitting elements described in this example, thehole-injection layer 111 does not use a metal oxide and includes only anorganic compound.

TABLE 16 Reference Thickness Weight Layer numeral (nm) Material ratioComparative Electrode 102 200 Al — light- Electron-injection layer 119 1LiF — emitting Electron- 118 (2) 20 NBPhen — elements transport layer118 (1) 20 2mDBTBPDBq-II — 51 to 54 Light-emitting 130 (2) 202mDBTBPDBq-II:PCBBT:Ir(dppm)₂(acac) 0.8:0.2:0.06 layer 130 (1) 202mDBTBPDBq-II:PCBBT:Ir(dppm)₂(acac) 0.7:0.3:0.06 Hole-transport 112 z₁PCBBiF — layer Hole-injection 111 60 β-TNB:p-dopant 1:0.01   layerElectrode 101 70 ITSO — Comparative Electrode 102 200 Al — lightElectron-injection layer 119 1 LiF — emitting Electron- 118 (2) 20NBPhen — elements transport layer 118 (1) 20 2mDBTBPDBq-II — 55 to 58Light-emitting 130 (2) 20 2mDBTBPDBq-II:PCBBT:Ir(dppm)₂(acac)0.8:0.2:0.06 layer 130 (1) 20 2mDBTBPDBq-II:PCBBT:Ir(dppm)₂(acac)0.7:0.3:0.06 Hole-transport 112 z₁ PCBBiF — layer Hole-injection 111 (2)60 NPB:p-dopant 1:0.01   layer Electrode 101 70 ITSO — Light- Electrode102 200 Al — emitting Electron-injection layer 119 1 LiF — elementsElectron- 118 (2) 20 NBPhen — 59 to 62 transport layer 118 (1) 202mDBTBPDBq-II — Light-emitting 130 (2) 202mDBTBPDBq-II:PCBBT:Ir(dppm)₂(acac) 0.8:0.2:0.06 layer 130 (1) 202mDBTBPDBq-II:PCBBT:Ir(dppm)₂(acac) 0.7:0.3:0.06 Hole-transport 112 z₁PCBBiF — layer Hole-injection 111 (2) 60 BPAFLP:p-dopant 1:0.01   layerElectrode 101 70 ITSO — Light- Electrode 102 200 Al — emittingElectron-injection layer 119 1 LiF — elements Electron- 118 (2) 20NBPhen — 63 to 66 transport layer 118 (1) 20 2mDBTBPDBq-II —Light-emitting 130 (2) 20 2mDBTBPDBq-II:PCBBT:Ir(dppm)₂(acac)0.8:0.2:0.06 layer 130 (1) 20 2mDBTBPDBq-II:PCBBT:Ir(dppm)₂(acac)0.7:0.3:0.06 Hole-transport 112 z₁ PCBBiF — layer Hole-injection 111 (2)60 TAPC:p-dopant 1:0.01   layer Electrode 101 70 ITSO —

TABLE 17 Comparative Comparative Comparative Comparative light- light-light- light- emitting emitting emitting emitting elements elementselements elements 51 and 55 52 and 56 53 and 57 54 and 58 and light- andlight- and light- and light- emitting emitting emitting emittingelements elements elements elements 59 and 63 60 and 64 61 and 65 62 and66 z₁ 20 25 30 35

<Measurement of Refractive Index>

The refractive indices of the hole-injection layers 111 of comparativelight-emitting elements 51 to 54, comparative light-emitting elements 55to 58, light-emitting elements 59 to 62, and light-emitting elements 63to 66 were measured. The measurement of the refractive indices wasperformed in a manner similar to that described in Example 1. Table 18shows the refractive indices (n Ordinary) of the films with respect tolight with a wavelength of 633 nm.

TABLE 18 Hole-injection layer n 111 (weight ratio) Ordinaryβ-TNB:p-dopant (1:0.01) 1.77 NPB:p-dopant (1:0.01) 1.77 BPAFLP:p-dopant(1:0.01) 1.73 TAPC:p-dopant (1:0.01) 1.67

Table 18 reveals that the mixed film ofN,N,N,N-tetra-naphthalen-2-yl-benzidine (abbreviation: β-TNB) and ap-dopant (purchased from Analysis Atelier Corporation) that is used forthe comparative light-emitting elements 51 to 54 and the mixed film ofNPB and a p-dopant that is used for the comparative light-emittingelements 55 to 58 each have a refractive index higher than 1.75. Bycontrast, it is revealed that the mixed film of BPAFLP and a p-dopantthat is used for the light-emitting elements 59 to 62 and the mixed filmof TAPC and a p-dopant that is used for the light-emitting elements 63to 66 each have a refractive index lower than 1.75.

<Fabrication of Light-Emitting Elements> <<Fabrication of ComparativeLight-Emitting Elements 51 to 54>>

As the electrode 101, an ITSO film was formed to a thickness of 70 nmover a glass substrate. Note that the electrode area of the electrode101 was set to 4 mm² (2 mm×2 mm).

Next, as the hole-injection layer 111, β-TNB and a p-dopant weredeposited over the electrode 101 by co-evaporation at a weight ratio(β-TNB: p-dopant) of 1:0.01 to a thickness of 60 nm.

Next, as the hole-transport layer 112, PCBBiF was deposited over thehole-injection layer 111 by evaporation to a thickness of z₁ nm. Notethat the value z₁ differs between the light-emitting elements, and Table17 shows the value z₁ in each of the light-emitting elements.

Next, as the light-emitting layer 130(1), 2mDBTBPDBq-II, PCBBiF, andIr(dppm)₂(acac) were deposited over the hole-transport layer 112 byco-evaporation at a weight ratio (2mDBTBPDBq-II: PCBBiF:Ir(dppm)₂(acac)) of 0.7:0.3:0.06 to a thickness of 20 nm, andsuccessively, as the light-emitting layer 130(2), 2mDBTBPDBq-II, PCBBiF,and Ir(dppm)₂(acac) were deposited by co-evaporation at a weight ratioof 0.8:0.2:0.06 to a thickness of 20 nm. Note that in the light-emittinglayer 130(1) and the light-emitting layer 130(2), Ir(dppm)₂(acac) is aguest material that emits phosphorescence.

Next, as the first electron-transport layer 118(1), 2mDBTBPDBq-II wasdeposited over the light-emitting layer 130(2) by co-evaporation to athickness of 20 nm. Subsequently, as the second electron-transport layer118(2), 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline(abbreviation: NBPhen) was deposited over the first electron-transportlayer 118(1) by evaporation to a thickness of 20 nm.

Next, as the electron-injection layer 119, lithium fluoride (LiF) wasdeposited over the second electron-transport layer 118(2) by evaporationto a thickness of 1 nm.

Next, as the electrode 102, aluminum (Al) was formed over theelectron-injection layer 119 to a thickness of 200 nm.

Next, in a glove box containing a nitrogen atmosphere, the comparativelight-emitting elements 51 to 54 were sealed by fixing a glass substratefor sealing to the glass substrate on which the organic materials wereformed using a sealant for organic EL. Specifically, the sealant wasapplied to the periphery of the organic materials formed on the glasssubstrate, the substrate was bonded to the glass substrate for sealing,irradiation with ultraviolet light having a wavelength of 365 nm at 6J/cm² was performed, and heat treatment at 80° C. for one hour wasperformed. Through the above steps, the comparative light-emittingelements 51 to 54 were obtained.

<<Fabrication of Comparative Light-Emitting Elements 55 to 58 andLight-Emitting Elements 59 to 66>>

The comparative light-emitting elements 55 to 58 and the light-emittingelements 59 to 66 were formed through the same steps as the steps offorming the comparative light-emitting elements 51 to 54 except for thestep of forming the hole-injection layer 111. The details of the elementstructures are shown in Table 16 and Table 17; thus, the details of thefabrication methods are omitted.

<Characteristics of Light-Emitting Elements>

Next, the characteristics of the fabricated comparative light-emittingelements 51 to 58 and light-emitting elements 59 to 66 were measured.The measurement was performed in a manner similar to that in Example 1.Table 19 shows the characteristics of the light-emitting elements ataround 1000 cd/m². The external quantum efficiency shown in Table 19 isobtained before the viewing angle correction.

TABLE 19 External quantum Current CIE Current Power efficiency (%)Voltage density chromaticity Luminance efficiency efficiency (afterviewing (V) (mA/cm²) (x, y) (cd/m²) (cd/A) (lm/W) angle correction)Comparative 2.90 1.49 (0.558, 0.443) 1145 76.7 83.1 31.0 light-emittingelement 51 Comparative 2.90 1.45 (0.562, 0.438) 1035 71.5 77.5 29.7light-emitting element 52 Comparative 2.90 1.38 (0.562, 0.436) 918 66.672.1 28.5 light-emitting element 53 Comparative 2.90 1.35 (0.563, 0.435)833 61.9 67.1 27.1 light-emitting element 54 Comparative 2.90 1.46(0.558, 0.442) 1129 77.4 83.9 31.1 light-emitting element 55 Comparative2.90 1.46 (0.561, 0.439) 1058 72.3 78.3 30.0 light-emitting element 56Comparative 2.90 1.49 (0.563, 0.437) 1019 68.2 73.9 28.9 light-emittingelement 57 Comparative 2.90 1.46 (0.564, 0.435) 922 63.2 68.4 27.5light-emitting element 58 Light-emitting 4.20 1.24 (0.560, 0.438) 93075.0 56.1 30.9 element 59 Light-emitting 4.20 1.24 (0.562, 0.436) 86169.5 52.0 29.5 element 60 Light-emitting 4.40 1.65 (0.565, 0.435) 105463.8 45.6 27.9 element 61 Light-emitting 4.40 1.69 (0.566, 0.434) 99558.8 42.0 26.4 element 62 Light-emitting 3.10 1.59 (0.565, 0.435) 111370.1 71.1 30.2 element 63 Light-emitting 3.10 1.64 (0.567, 0.433) 103162.8 63.6 27.9 element 64 Light-emitting 3.10 1.68 (0.569, 0.432) 94856.5 57.3 25.7 element 65 Light-emitting 3.10 1.73 (0.568, 0.431) 89751.7 52.4 24.0 element 66

The above results demonstrate that the comparative light-emittingelements 51 to 58and the light-emitting elements 59 to 66fabricated inthis example have favorable driving voltage and luminous efficiencyregardless of the structure of the hole-injection layer 111.

<Relation Between Refractive Index of Hole-Injection Layer 111 andExternal Quantum Efficiency>

FIG. 32 shows a relation between chromaticity y and external quantumefficiency with the organic materials used for the hole-injection layers111 with the use of the values of the elements shown in Table 19. InFIG. 32, the values of the comparative light-emitting elements 51 to 54were used for data on the “β-TNB” curve, the values of the comparativelight-emitting elements 55 to 58 were used for data on the “NPB” curve,the values of the light-emitting elements 59 to 62 were used for data onthe “BPAFLP” curve, and the values of the light-emitting elements 63 to66 were used for data on the “TAPC” curve.

As shown in Table 18, the refractive index of the hole-injection layer111 containing 8-TNB or NPB is higher than 1.75, whereas the refractiveindex of the hole-injection layer 111 containing BPAFLP or TAPC is lowerthan or equal to 1.75. FIG. 32 shows that when the external quantumefficiencies of the light-emitting elements at chromaticity y ofapproximately 0.435 are compared with each other, for example, thelight-emitting element including the hole-injection layer 111 with a lowrefractive index has higher external quantum efficiency. Thus, it isfound that the light-emitting element including the hole-injection layer111 with a low refractive index has higher luminous efficiency at thesame chromaticity. This is because light attenuation due to anevanescent mode is reduced and thus outcoupling efficiency is improved.

Reference Example 1

In this reference example, a synthesis method of Ir(pbi-diBuCNp)₃ usedin Example 1 is described.

<Step 1; Synthesis of 4-Amino-3,5-Diisobutylbenzonitrile>

Into a 3000 mL three-neck flask were put 52 g (280 mmol) of4-amino-3,5-dichlorobenzonitrile, 125 g (1226 mmol) of isobutylboronicacid, 260 g (1226 mmol) of tripotassium phosphate, 5.4 g (13.1 mmol) of2-dicyclohexylphosphino-2′,6′-dimethoxybiphenyl (S-phos), and 1500 mL oftoluene, the air in the flask was replaced with nitrogen, and themixture was degassed by being stirred while the pressure in the flaskwas reduced. After the degassing, 4.8 g (5.2 mmol) oftris(dibenzylideneacetone)dipalladium(0) was added, and the mixture wasstirred under a nitrogen stream at 130° C. for 12 hours. Toluene wasadded to the obtained reaction solution, and the mixture wassuction-filtered through a filter aid in which Celite (manufactured byWako Pure Chemical Industries, Ltd., Catalog No. 531-16855), Florisil(manufactured by Wako Pure Chemical Industries, Ltd., Catalog No.540-00135), and aluminum oxide were stacked in this order. The obtainedfiltrate was concentrated to give an oily substance. The obtained oilysubstance was purified by silica column chromatography. Toluene was usedas the developing solvent. The resulting fraction was concentrated togive 61 g of a yellow oily substance in a yield of 95%. The obtainedyellow oily substance was identified as4-amino-3,5-diisobutylbenzonitrile by nuclear magnetic resonance (NMR)spectroscopy. The synthesis scheme of Step 1 is shown in (a-1) below.

Step 2; Synthesis of4-[N-(2-nitrophenyl)amino]-3,5-diisobutylbenzonitrile

Into a 1000 mL three-neck flask were put 30 g (131 mmol) of4-amino-3,5-diisobutylbenzonitrile synthesized in Step 1, 86 g (263mmol) of cesium carbonate, 380 mL of dimethylsulfoxide (DMSO), and 19 g(131 mmol) of 2-fluoronitrobenzene, and the mixture was stirred under anitrogen stream at 120° C. for 20 hours. After the predetermined timeelapsed, the reaction solution was subjected to extraction withchloroform to give a crude product. The obtained crude product waspurified by silica column chromatography. As the developing solvent, a7:1 hexane-ethyl acetate mixed solvent was used. The obtained fractionwas concentrated to give an orange solid. Hexane was added to theobtained solid, which was then suction-filtered to give 16 g of a yellowsolid in a yield of 35%. The obtained yellow solid was identified as4-[N-(2-nitrophenyl)amino]-3,5-diisobutylbenzonitrile by nuclearmagnetic resonance (NMR) spectroscopy. The synthesis scheme of Step 2 isshown in (a-2) below.

Step 3; Synthesis of4-[N-(2-aminophenyl)amino]-3,5-diisobutylbenzonitrile

Into a 2000 mL three-neck flask were put 21 g (60.0 mmol) of4-[N-(2-nitrophenyl)amino]-3,5-diisobutylbenzonitrile synthesized inStep 2, 11 mL (0.6 mol) of water, and 780 mL of ethanol, and the mixturewas stirred. To this mixture was added 57 g (0.3 mol) of tin(II)chloride, and the mixture was stirred under a nitrogen stream at 80° C.for 7.5 hours. After the predetermined time elapsed, the mixture waspoured into 400 mL of a 2M sodium hydroxide aqueous solution, and thesolution was stirred at room temperature for 16 hours. A precipitatedsediment was removed by suction filtration, and washing with chloroformwas further performed, whereby a filtrate was obtained. The obtainedfiltrate was subjected to extraction with chloroform. After that, theextracted solution was concentrated to give 20 g of a white solid in ayield of 100%. The obtained white solid was identified as4-[N-(2-aminophenyl)amino]-3,5-diisobutylbenzonitrile by nuclearmagnetic resonance (NMR) spectroscopy. The synthesis scheme of Step 3 isshown in (a-3) below.

Step 4; Synthesis of1-(4-cyano-2,6-diisobutylphenyl)-2-phenyl-1H-benzimidazole(abbreviation: Hpbi-diBuCNp)

Into a 1000 mL recovery flask were put 20 g (60.0 mmol) of4-[N-(2-aminophenyl)amino]-3,5-diisobutylbenzonitrile synthesized inStep 3, 200 mL of acetonitrile, and 6.4 g (60.0 mmol) of benzaldehyde,and the mixture was stirred at 100° C. for one hour. To this mixture wasadded 100 mg (0.60 mmol) of iron(III) chloride, and the mixture wasstirred at 100° C. for 24 hours. After the predetermined time elapsed,the reaction solution was subjected to extraction with chloroform togive an oily substance. Toluene was added to the obtained oilysubstance, which was then subjected to suction filtration through afilter aid in which Celite, Florisil, and aluminum oxide were stacked inthis order. The obtained filtrate was concentrated to give an oilysubstance. The obtained oily substance was purified by silica columnchromatography. Toluene was used as the developing solvent. The obtainedfraction was concentrated to give a solid. The solid was recrystallizedwith ethyl acetate/hexane to give 4.3 g of a white solid, which was thetarget substance, in a yield of 18%. The obtained white solid wasidentified as 1-(4-cyano-2,6-diisobutylphenyl)-2-phenyl-1H-benzimidazole(abbreviation: Hpbi-diBuCNp) by nuclear magnetic resonance (NMR)spectroscopy. The synthesis scheme of Step 4 is shown in (a-4) below.

Step 5; Synthesis oftris{2-[1-(4-cyano-2,6-diisobutylphenyl)-1H-benzimidazol-2-yl-κN³]phenyl-κC}iridium(III)(abbreviation: Ir(pbi-diBuCNp)₃)

Into a reaction container with a three-way cock were put 1.8 g (4.4mmol) of 1-(4-cyano-2,6-diisobutylphenyl)-2-phenyl-1H-benzimidazole(abbreviation: Hpbi-diBuCNp) synthesized in Step 4 and 0.43 g (0.88mmol) of tris(acetylacetonato)iridium(III), and the mixture was heatedat 250° C. for 39 hours. Toluene was added to the obtained reactionmixture, and an insoluble matter was removed. The obtained filtrate wasconcentrated to give a solid. The obtained solid was purified by silicacolumn chromatography (neutral silica). Toluene was used as thedeveloping solvent. The obtained fraction was concentrated to give asolid. The obtained solid was recrystallized with ethyl acetate/hexaneto give 0.26 g of a yellow solid in a yield of 21%. The synthesis schemeis shown in (a-5) below.

Protons (H) of the yellow solid obtained above were measured by nuclearmagnetic resonance (NMR) spectroscopy. The measurement results indicatethat Ir(pbi-diBuCNp)₃ (a mixture of a fac isomer and a mer isomer) isobtained in this reference example. Note that ¹H-NMR reveals that theproduct is an isomer mixture of a fac isomer and a mer isomer. Theisomer ratio of the fac isomer to the mer isomer was found to be 3:2.

This application is based on Japanese Patent Application Serial No.2017-100046 filed with Japan Patent Office on May 19, 2017 and JapanesePatent Application Serial No. 2017-100049 filed with Japan Patent Officeon May 19, 2017, the entire contents of which are hereby incorporatedherein by reference.

REFERENCE NUMERALS

-   10: substrate, 11: electrode, 12: electrode, 15: substrate, 20:    organic semiconductor layer, 30: carrier-transport layer, 40:    functional layer, 50: electronic device, 100: EL layer, 101:    electrode, 102: electrode, 106: light-emitting unit, 108:    light-emitting unit, 110: light-emitting unit, 111: hole-injection    layer, 112: hole-transport layer, 113: electron-transport layer,    114: electron-injection layer, 115: charge-generation layer, 116:    hole-injection layer, 117: hole-transport layer, 118:    electron-transport layer, 119: electron-injection layer, 120:    light-emitting layer, 121: guest material, 122: host material, 130:    light-emitting layer, 131: guest material, 131_1: organic compound,    131_2: organic compound, 132: host material, 134: light-emitting    region, 140: light-emitting layer, 141: guest material, 142: host    material, 142_1: organic compound, 142_2: organic compound, 150:    light-emitting element, 170: light-emitting layer, 200: substrate,    250: light-emitting element, 252: light-emitting element, 601:    source side driver circuit, 602: pixel portion, 603: gate side    driver circuit, 604: sealing substrate, 605: sealing material, 607:    space, 608: wiring, 610: element substrate, 611: switching TFT, 612:    current controlling TFT, 613: electrode, 614: insulator, 616: EL    layer, 617: electrode, 618: light-emitting element, 623: n-channel    TFT, 624: p-channel TFT, 900: portable information terminal, 901:    housing, 902: housing, 903: display portion, 905: hinge portion,    910: portable information terminal, 911: housing, 912: display    portion, 913: operation button, 914: external connection port, 915:    speaker, 916: microphone, 917: camera, 920: camera, 921: housing,    922: display portion, 923: operation button, 924: shutter button,    926: lens, 1001: substrate, 1002: base insulating film, 1003: gate    insulating film, 1006: gate electrode, 1007: gate electrode, 1008:    gate electrode, 1020: interlayer insulating film, 1021: interlayer    insulating film, 1022: electrode, 1024B: electrode, 1024G:    electrode, 1024R: electrode, 1024W: electrode, 1025B: lower    electrode, 1025G: lower electrode, 1025R: lower electrode, 1025W:    lower electrode, 1026: partition, 1028: EL layer, 1029: electrode,    1031: sealing substrate, 1032: sealing material, 1033: base    material, 1034B: coloring layer, 1034G: coloring layer, 1034R:    coloring layer, 1036: overcoat layer, 1037: interlayer insulating    film, 1040: pixel portion, 1041: driver circuit portion, 1042:    peripheral portion, 3054: display portion, 3500: multifunction    terminal, 3502: housing, 3504: display portion, 3506: camera, 3508:    lighting, 3600: light, 3602: housing, 3608: lighting, 3610: speaker,    8501: lighting device, 8502: lighting device, 8503: lighting device,    8504: lighting device, 9000: housing, 9001: display portion, 9003:    speaker, 9005: operation key, 9006: connection terminal, 9007:    sensor, 9008: microphone, 9055: hinge, 9200: portable information    terminal, 9201: portable information terminal, and 9202: portable    information terminal.

1. (canceled)
 2. A light-emitting device comprising: a first electrode;a second electrode; a first layer; and a second layer, wherein the firstlayer is between the first electrode and the second layer, wherein thesecond layer is between the first layer and the second electrode,wherein the first layer comprises a first substance and a first organiccompound, wherein the first substance is a substance comprising anelectron-withdrawing group, wherein the first organic compound comprisesa substituent bonding with an sp³ bond, and wherein a refractive indexof an ordinary ray of a thin film of the first organic compound withrespect to light with a wavelength of 532 nm is higher than or equal to1 and lower than or equal to 1.75.
 3. A light-emitting devicecomprising: a first electrode; a second electrode; a first layer; and asecond layer, wherein the first layer is between the first electrode andthe second layer, wherein the second layer is between the first layerand the second electrode, wherein the first layer comprises a firstsubstance and a first organic compound, wherein the first substance is asubstance comprising oxygen and a transition metal, wherein the firstorganic compound comprises a substituent bonding with an sp³ bond, andwherein a refractive index of an ordinary ray of a thin film of thefirst organic compound with respect to light with a wavelength of 532 nmis higher than or equal to 1 and lower than or equal to 1.75.
 4. Alight-emitting device comprising: a first electrode; a second electrode;a first layer; and a second layer, wherein the first layer is betweenthe first electrode and the second layer, wherein the second layer isbetween the first layer and the second electrode, wherein the firstlayer comprises a first substance and a first organic compound, whereinthe first substance is a substance comprising an electron-withdrawinggroup, wherein the first organic compound comprises a substituentbonding with an sp³ bond, and wherein a refractive index of an ordinaryray of a thin film of the first organic compound with respect to lightwith a wavelength of 633 nm is higher than or equal to 1 and lower thanor equal to 1.75.
 5. A light-emitting device comprising: a firstelectrode; a second electrode; a first layer; and a second layer,wherein the first layer is between the first electrode and the secondlayer, wherein the second layer is between the first layer and thesecond electrode, wherein the first layer comprises a first substanceand a first organic compound, wherein the first substance is a substancecomprising oxygen and a transition metal, wherein the first organiccompound comprises a substituent bonding with an sp³ bond, and wherein arefractive index of an ordinary ray of a thin film of the first organiccompound with respect to light with a wavelength of 633 nm is higherthan or equal to 1 and lower than or equal to 1.75.
 6. Thelight-emitting device according to claim 2, wherein the second layercomprises a light-emitting material.
 7. The light-emitting deviceaccording to claim 3, wherein the second layer comprises alight-emitting material.
 8. The light-emitting device according to claim4, wherein the second layer comprises a light-emitting material.
 9. Thelight-emitting device according to claim 5, wherein the second layercomprises a light-emitting material.
 10. The light-emitting deviceaccording to claim 2, wherein a refractive index of an ordinary ray ofthe first layer is lower than a refractive index of an ordinary ray ofthe second layer.
 11. The light-emitting device according to claim 3,wherein a refractive index of an ordinary ray of the first layer islower than a refractive index of an ordinary ray of the second layer.12. The light-emitting device according to claim 4, wherein a refractiveindex of an ordinary ray of the first layer is lower than a refractiveindex of an ordinary ray of the second layer.
 13. The light-emittingdevice according to claim 5, wherein a refractive index of an ordinaryray of the first layer is lower than a refractive index of an ordinaryray of the second layer.
 14. The light-emitting device according toclaim 2, further comprising a third layer between the first layer andthe second layer.
 15. The light-emitting device according to claim 3,further comprising a third layer between the first layer and the secondlayer.
 16. The light-emitting device according to claim 4, furthercomprising a third layer between the first layer and the second layer.17. The light-emitting device according to claim 5, further comprising athird layer between the first layer and the second layer.
 18. Thelight-emitting device according to claim 2, wherein theelectron-withdrawing group is a halogen group or a cyano group.
 19. Thelight-emitting device according to claim 4, wherein theelectron-withdrawing group is a halogen group or a cyano group.
 20. Thelight-emitting device according to claim 3, wherein the transition metalis any one of titanium, vanadium, tantalum, molybdenum, tungsten,rhenium, ruthenium, chromium, zirconium, hafnium, and silver.
 21. Thelight-emitting device according to claim 5, wherein the transition metalis any one of titanium, vanadium, tantalum, molybdenum, tungsten,rhenium, ruthenium, chromium, zirconium, hafnium, and silver.
 22. Anelectronic device comprising: the light-emitting device according toclaim 2; and at least one of a housing and a touch sensor.
 23. Anelectronic device comprising: the light-emitting device according toclaim 3; and at least one of a housing and a touch sensor.
 24. Anelectronic device comprising: the light-emitting device according toclaim 4; and at least one of a housing and a touch sensor.
 25. Anelectronic device comprising: the light-emitting device according toclaim 5; and at least one of a housing and a touch sensor.